Transient Capacitance Studies of a Low-Lying Electron Trap in n-type Silicon

1980 ◽  
Vol 2 ◽  
Author(s):  
G. E. Jellison ◽  
J. W. Cleland ◽  
R. T. Young
Keyword(s):  
Electric Field ◽  
Time Constant ◽  
Pulse Width ◽  
Characteristic Time ◽  
Depletion Region ◽  
Electron Trap ◽  
Majority Carrier ◽  
Type Silicon ◽  
Transient Capacitance ◽  
Capacitance Response

ABSTRACTA new electron trap has been observed in electronirradiated n-type silicon at Ec − ET = 0.105 eV using transient capacitance techniques. It is found that the maximum transient capacitance response is observed only when the majority carrier pulse width is much smaller than some characteristic time constant, and when the time between pulses is much larger than another characteristic time constant. It is shown that this defect is related to an electron trap at Ec−ET = 0.172 eV (probably the oxygenvacancy or A-center); it is believed that this trap is induced by the electric field found in the depletion region of a p-n junction.

Influence of Pulse Width on Polyphenol Extraction from Agricultural Products by Pulsed Electric Field

2013 ◽  
Vol 133 (2) ◽  
pp. 32-37 ◽  
Author(s):  
Akira Nakagawa ◽  
Hitoshi Hatayama ◽  
Koichi Takaki ◽  
Shoji Koide ◽  
Yukio Kawamura
Keyword(s):  
Electric Field ◽  
Pulse Width ◽  
Pulsed Electric Field ◽  
Agricultural Products ◽  
Polyphenol Extraction

scholarly journals An Analysis of the Initiation Process of Electroexplosive Devices

2018 ◽  
pp. 322-333
Author(s):  
Paulo C. C. Faria
Keyword(s):  
Differential Equation ◽  
Time Constant ◽  
Pulse Width ◽  
Temperature Response ◽  
Electrical Energy ◽  
Heat Transfer Process ◽  
Process Time ◽  
Efficient Operation ◽  
Wide Range ◽  
Range Of Values

Electroexplosive devices, EEDs or squibs (an electric resistance encapsulated by a primary explosive), fundamentally convert electrical energy into heat, solely to start off an explosive chemical reaction. Obviously, the EED activation shall not happen by accident or, even worse, by intentional exogenous influence. From an ordinary differential equation (ODE), which describes this device thermal behaviour for both continuous and pulsed electrical excitation, a remarkable, but certainly not intuitive, dependence of the temperature response on the heat transfer process time-constant is verified: the EED temperature profile dramatically changes as the time-constant spans a wide range of values, from much lesser than the pulse width to much greater than the pulse period. On the basis of this dependence, important recommendations, concerning the EED safety (and efficient) operation, are presented.

scholarly journals Electro-Optical Measurement of Intense Electric Field on a High Energy Pulsed Power Accelerator

2021 ◽  
Author(s):  
Israel Owens ◽  
Chris Grabowski ◽  
Andrew Biller ◽  
Ben Ulmen ◽  
Nathan Joseph ◽  
...  
Keyword(s):  
Electric Field ◽  
Electromagnetic Interference ◽  
Pulse Width ◽  
Optical Measurement ◽  
High Energy ◽  
Pulsed Power ◽  
Operating Parameters ◽  
Radiation Output ◽  
Scientific Experiments ◽  
High Fields

Abstract We describe a direct electro-optical approach to measuring a strong 118 MV/m narrow pulse width (~33 ns) electric field in the magnetically insulated transmission line (MITL) of a pulsed power accelerator. To date, this is the highest direct external electric field measured electro-optically in a pulsed power accelerator, and it is between two to three orders of magnitude higher than values reported in comparable high energy scientific experiments. The MITL electric field is one of the most important operating parameters in an accelerator and is critical to understanding the properties of the radiation output. However, accurately measuring these high fields using conventional pulsed power diagnostics is difficult due to the strength of interfering particles and fields. Our approach uses a free-space laser beam with a dielectric crystal sensor that is highly immune to electromagnetic interference and does not require an external calibration. Here we focus on device theory, operating parameters, laboratory and pulsed power accelerator experiments as well as challenges that were overcome in the measurement environment.

scholarly journals Influence of a single lightning discharge on the intensity of an air electric field and acoustic emission of near-surface rocks

Solid Earth ◽  
2012 ◽  
Vol 3 (2) ◽  
pp. 307-311 ◽  
Author(s):  
S. E. Smirnov ◽  
Y. V. Marapulets
Keyword(s):  
Acoustic Emission ◽  
Electric Field ◽  
Normal Level ◽  
Electric Potential ◽  
Characteristic Time ◽  
Lightning Discharge ◽  
Potential Gradient ◽  
Capacitor Discharge ◽  
Near Surface ◽  
Sharp Fall

Abstract. The effect was observed as a sharp fall of the electric potential gradient from +80 V m−1 down to –21 V m−1. After that the field returned to its normal level according to the formula of the capacitor discharge with 17 s characteristic time. Simultaneously, the response of the acoustic emission of surface rocks in the range of frequencies between 6.5 kHz and 11 kHz was evaluated.

Method and Mechanism of Regulating Rheological Properties of Water-Based Drilling Fluid by High-Frequency and High-Voltage Alternating Current Electric Field

SPE Journal ◽  
2020 ◽  
Vol 25 (05) ◽  
pp. 2220-2233
Author(s):  
Weian Huang ◽  
Ming Lei ◽  
Jingwen Wang ◽  
Kaihe Lv ◽  
Lin Jiang ◽  
...  
Keyword(s):  
Electric Field ◽  
Rheological Properties ◽  
High Voltage ◽  
High Frequency ◽  
Pulse Width ◽  
Drilling Fluid ◽  
Width Ratio ◽  
Drilling Fluids ◽  
Water Based ◽  
Bentonite Suspension

Summary The rheology of drilling fluid is commonly regulated by chemical methods. In this work, a physical method of a high-frequency and high-voltage alternating current (AC) electric field to regulate the rheological properties of water-based drilling fluid is established. The effects of the electric field on the continuous phase and dispersed phase, as well as two kinds of water-based drilling fluids, were investigated, and the response relationship among rheological properties modeled by Bingham and Herschel-Bulkley (H-B) models and electric-field parameters was explored. Results showed that water conductivity increased when voltage reached 4 kV, whereas it was restored to the original state after 3 hours in the absence of an electric field, showing a memory effect. The effect was also observed on bentonite suspension, whose plastic viscosity increased with the aid of an electric field and decreased over time. Voltage showed the greatest effect on bentonite-suspension viscosity, followed by frequency and pulse-width ratio. Under the condition of voltage of 5 kV, frequency of 5 kHz, and pulse-width ratio of 80%, there was a maximum increase of 50% in viscosity. The addition of salts caused bentonite-suspension flocculation, and electric field reduced the consistency coefficient and relieved flocculation state. When polymers were incorporated in bentonite suspension, the electric field could decrease the adsorption amount between clay particles and polymeric additives such as amphoteric and acrylamide-based polymers. For two typical drilling fluids, the voltage of an introduced electric field was the main controlling factor to change the rheological properties; their plastic viscosity and consistency coefficient both started to increase when voltage reached 4 kV.

Hydrogen-Vacancy Complexes and their Deep States in n-Type Silicon

2015 ◽  
Vol 242 ◽  
pp. 163-168 ◽  
Author(s):  
Ilia L. Kolevatov ◽  
Frank Herklotz ◽  
Viktor Bobal ◽  
Bengt Gunnar Svensson ◽  
Edouard V. Monakhov
Keyword(s):  
Schottky Diode ◽  
Deep Level Transient Spectroscopy ◽  
Minority Carrier ◽  
Deep Level ◽  
Energy Levels ◽  
Depletion Region ◽  
Type Silicon ◽  
Oxygen Center ◽  
Hydrogen Vacancy ◽  
Transient Spectroscopy

The evolution of irradiation-induced and hydrogen-related defects in n-type silicon in the temperature range 0 – 300 °C has been studied by deep level transient spectroscopy (DLTS) and minority carrier transient spectroscopy (MCTS). Implantation of a box-like profile of hydrogen was performed into the depletion region of a Schottky diode to undertake the DLTS and MCTS measurements. Proportionality between the formation of two hydrogen-related deep states and a decrease of the vacancy-oxygen center concentration was found together with the appearance of new hydrogen-related energy levels.

Design of Metal-Semiconductor-Metal Ultra-Violet Detector on Gallium Nitride

2001 ◽  
Vol 680 ◽  
Author(s):  
Wenhua Gu ◽  
Soo Jin Chua ◽  
Xin Hai Zhang
Keyword(s):  
Gallium Nitride ◽  
Electric Field ◽  
Field Intensity ◽  
Electric Field Intensity ◽  
Ultra Violet ◽  
Depletion Region ◽  
Structure Parameters ◽  
Metal Semiconductor Metal ◽  
Effective Electric Field ◽  
Response Current

ABSTRACTThe design of Gallium Nitride based Metal-Semiconductor-Metal Ultra-Violet detector is discussed. We introduce a simulation model using Medici to describe the performances of such detectors. Structure parameters, such as the inter-digitated electrode dimension and the GaN layer thickness, are optimized for response current and time using this model. The simulation results can be explained by the variation of depletion region. We introduce the “effective electric field intensity” to describe the depletion region. The relationship between the “effective electric field intensity” and structure parameters are simulated and discussed.

Sign in / Sign up

Export Citation Format

Share Document