Surface Phase Separation and Ordering in Compound Semiconductor Alloys

1990 ◽  
Vol 198 ◽  
Author(s):  
T.L. Mcdevitt ◽  
S. Mahajan ◽  
D.E. Laughlin ◽  
W.A. Bonner ◽  
V.G. Keramidas

ABSTRACTThe orientation dependence of phase separation has been examined in detail in InGaAsP layers grown by liquid phase epitaxy on (001), (110), (111)In and (123) InP substrates. It is shown that phase separation is two-dimensional in nature and does not occur along the growth direction for the cases examined. Further, phase separation takes place along the soft directions lying in the growth plane. These results very strongly suggest that phase separation evolves at the surface while the layer is growing.CuPt-type ordering characteristics of InGaAsP layers are presented. In addition, the Influence of growth temperature and growth rate on domain sizes have been investigated in GaInP2 layers. A model has been proposed to rationalize the formation of domains and involves steps present on the surface. Results suggest that ordering like phase separation occurs at the surface while the layers is being deposited. It is inferred that the two microstructural features evolve concomitantly at the surface during layer growth.

1988 ◽  
Vol 144 ◽  
Author(s):  
S. Mahajan ◽  
M. A. Shahid

ABSTRACTMIcrostructural characteristics of phase separated and ordered ternary and quaternary layers of Ill-V compound semiconductors grown by a variety of techniques are highlighted. It is argued that the fine scale contrast modulations seen in a number of layers arise from a two-dimensional, surface spinodal decomposition at the growth temperature. On the other hand, coarse contrast modulations could result from accommodation of asymmetrical strains associated with the twodimensional decomposition.Long range atomic order is observed in a variety of layers grown by different techniques and co-exists with phase separation. In InGaAs and InGaAsP layers, grown on (001) InP substrates, ordering is observed only on the two {111} planes that contain the line of intersection of the {111}in plane with the (001) InP surface. As a result of ordering, periodicity along the 〈111〉 direction is doubled. Also, the influence of growth temperatures and growth rates on ordering characteristics in GalnP and (Ga, Al) InP layers is reported.


1989 ◽  
Vol 50 (3) ◽  
pp. 375-385 ◽  
Author(s):  
H. Fadel ◽  
D. Guillon ◽  
A. Skoulios ◽  
F. Barbarin ◽  
M. Dugay

2021 ◽  
Author(s):  
Dean N. Edun ◽  
Meredith R. Flanagan ◽  
Arnaldo L. Serrano

Two-dimensional infrared spectroscopy reveals folding of an intrinsically disordered peptide when sequestered into a model “membrane-less” organelle.


Soft Matter ◽  
2021 ◽  
Author(s):  
Claudio Maggi ◽  
Matteo Paoluzzi ◽  
Andrea Crisanti ◽  
Emanuela Zaccarelli ◽  
Nicoletta Gnan

We perform large-scale computer simulations of an off-lattice two-dimensional model of active particles undergoing a motility-induced phase separation (MIPS) to investigate the systems critical behaviour close to the critical point...


1998 ◽  
Vol 58 (22) ◽  
pp. R14685-R14688 ◽  
Author(s):  
A. C. Cosentini ◽  
M. Capone ◽  
L. Guidoni ◽  
G. B. Bachelet

Reversible results for the adsorption of benzene, toluene and n -heptane vapours on mercury have been obtained. The films were found to be gaseous and obeyed the Volmer eqution F ( A - b ) = kT , where F = spreading pressure, A =area per molecule and b = co-area. The possibility that the films might be immobile was considered and the Langmuir equation was applied but found unsatisfactory. A standard state for the surface phase was defined and the free energy, total energy and entropy of adsorption evaluated. The heat of adsorption was shown to increase with the amount on the surface. A number of phase changes were found to occur after the completion of monolayer adsorp­tion, the most striking being interpreted as the change over from ‘flat’ to ‘vertical’ adsorp­tion of the toluene molecules. Others were thought to be either two-dimensional condensation or adsorption of a second layer.


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