Theory of the Quasiparticle Effective Masses in Semiconductors based on an Electron Self Energy Approach

1990 ◽  
Vol 193 ◽  
Author(s):  
Xuejun Zhu ◽  
Mark S. Hybertsen ◽  
Steven G. Louie
Keyword(s):  
Effective Mass ◽  
Local Density ◽  
Energy Operator ◽  
Electron Interaction ◽  
Electron Effective Mass ◽  
Self Energy ◽  
Effective Masses ◽  
The Matrix ◽  
Energy Renormalization ◽  
Energy Dependent

ABSTRACTA conceptually complete formalism for the quasiparticle effective masses in semiconductors is proposed. Our approach is based. on a generalized form of the theory, including the effects of the nonlocal, energy dependent electron self: energy operator Σ, which accounts for the electron-electron interaction. This introduces two -important effects on the expression of the effective mass: an explicit energy renormalization and an extra contribution to the matrix element that enters the usual . Our preliminary numerical results for prototypical GaAs show promising improvements over the results from the local density approximation for the calculated electron effective mass compared to experimental data.

scholarly journals Ab InitioStudy of Strain Effects on the Quasiparticle Bands and Effective Masses in Silicon

2015 ◽  
Vol 2015 ◽  
pp. 1-8 ◽  
Author(s):  
Mohammed Bouhassoune ◽  
Arno Schindlmayr
Keyword(s):  
Electronic Properties ◽  
Effective Mass ◽  
Local Density Approximation ◽  
Field Effect Transistors ◽  
Local Density ◽  
Energy Splitting ◽  
Density Approximation ◽  
Self Energy ◽  
Effective Masses ◽  
Structural And Electronic Properties

Usingab initiocomputational methods, we study the structural and electronic properties of strained silicon, which has emerged as a promising technology to improve the performance of silicon-based metal-oxide-semiconductor field-effect transistors. In particular, higher electron mobilities are observed inn-doped samples with monoclinic strain along the [110] direction, and experimental evidence relates this to changes in the effective mass as well as the scattering rates. To assess the relative importance of these two factors, we combine density-functional theory in the local-density approximation with theGWapproximation for the electronic self-energy and investigate the effect of uniaxial and biaxial strains along the [110] direction on the structural and electronic properties of Si. Longitudinal and transverse components of the electron effective mass as a function of the strain are derived from fits to the quasiparticle band structure and a diagonalization of the full effective-mass tensor. The changes in the effective masses and the energy splitting of the conduction-band valleys for uniaxial and biaxial strains as well as their impact on the electron mobility are analyzed. The self-energy corrections withinGWlead to band gaps in excellent agreement with experimental measurements and slightly larger effective masses than in the local-density approximation.

EFFECTS OF CONFINED LO AND SO PHONON MODES ON POLARON IN FREESTANDING CYLINDRICAL QUANTUM WIRE WITH PARABOLIC CONFINEMENT

2009 ◽  
Vol 23 (29) ◽  
pp. 3515-3523 ◽  
Author(s):  
ANYUN ZOU ◽  
HONGJING XIE
Keyword(s):  
Effective Mass ◽  
Quantum Wire ◽  
Longitudinal Optical ◽  
Perturbation Approach ◽  
Wire Radius ◽  
Phonon Modes ◽  
Phonon Interaction ◽  
Electron Effective Mass ◽  
Self Energy ◽  
Parabolic Confinement

The electron self-energy and correction to the electron effective mass in a freestanding quantum wire with parabolic confining potential was investigated by the perturbation approach. Both the electron-confined longitudinal optical (LO) phonon and surface optical (SO) phonon interactions were considered. Results shows that, for small wire radius, the contributions of electron–LO phonon interaction to the electron self-energy and the correction to the electron effective mass are relatively small in compare with those of the electron–SO phonon interaction.

Electron effective-mass values in GaxIn1−xSb alloys

1969 ◽  
Vol 47 (6) ◽  
pp. 631-636 ◽  
Author(s):  
Marcel J. Aubin ◽  
Mathew B. Thomas ◽  
Eric H. van Tongerloo ◽  
John C. Woolley
Keyword(s):  
Effective Mass ◽  
High Frequency ◽  
Room Temperature ◽  
Composition Range ◽  
Bridgman Technique ◽  
Scattering Parameter ◽  
Electron Effective Mass ◽  
High Frequency Dielectric Constant ◽  
The Matrix ◽  
Good Agreement

Room-temperature measurements of Faraday rotation, magneto–thermoelectric power, and infrared reflectance have been made on homogeneous coarsely polycrystalline n-type samples of GaxIn1−xSb alloys produced by the horizontal Bridgman technique. Using these data and a Kane equation for the (000) conduction band, values of the bottom of the band effective mass m00* have been determined over the composition range 0 < x < 0.85, i.e. the range in which the subsidiary [Formula: see text] minima make no contribution. The results from the three different techniques show very good agreement. From the data, values are obtained also for the square of the matrix element P2, the high-frequency dielectric constant ε∞, and the scattering parameter s for the various alloy specimens.

Prediction of New Fingerprints of Ordering in GaInP2 Alloys

1995 ◽  
Vol 417 ◽  
Author(s):  
Alberto Franceschetti ◽  
Su-Huai Wei ◽  
Alex Zunger
Keyword(s):  
Band Gap ◽  
Effective Mass ◽  
Pressure Coefficient ◽  
Strong Anisotropy ◽  
Electron Effective Mass ◽  
Effective Masses ◽  
Epitaxial Strain ◽  
Degree Of Order ◽  
Good Agreement ◽  
Disordered Alloy

AbstractUsing ab initio all-electron methods, we investigate the evolution of effective masses, deformation potentials and pressure coefficients with the degree of long-range order in spontaneously ordered Ga0.5In0.5P alloys. We find that (i) the electron effective mass in the ordering direction increases significantly with the degree of order, while the effective mass in the perpendicular direction decreases; this produces a strong anisotropy of the electron effective mass which is not present in the disordered alloy; (ii) the band-gap deformation potential for (001) epitaxial strain decreases with increasing degree of order, reflecting the extent of the ordering-induced Γ - L coupling; (iii) the band-gap pressure coefficient decreases from 8.4 meV/kbar in the disordered alloy to 6.6 meV/kbar in the ordered CuPt structure; interpolation to partial degrees of order leads to good agreement with recent high-pressure experiments.

Effective masses in a dense fermion background — Applied to neutrinos, dark matter and dark energy

2014 ◽  
Vol 29 (21) ◽  
pp. 1444010
Author(s):  
Bruce H. J. McKellar ◽  
T. J. Goldman ◽  
G. J. Stephenson
Keyword(s):  
Dark Matter ◽  
Dark Energy ◽  
Scalar Field ◽  
Effective Mass ◽  
Negative Pressure ◽  
Expectation Value ◽  
Effective Masses ◽  
Neutrino Astrophysics

If fermions interact with a scalar field, and there are many fermions present the scalar field may develop an expectation value and generate an effective mass for the fermions. This can lead to the formation of fermion clusters, which could be relevant for neutrino astrophysics and for dark matter astrophysics. Because this system may exhibit negative pressure, it also leads to a model of dark energy.

Path Integral Calculations of Particle Self-Energy and Effective Mass in Coulomb Systems

1997 ◽  
Vol 11 (04) ◽  
pp. 129-138 ◽  
Author(s):  
V. Sa-Yakanit ◽  
V. D. Lakhno ◽  
Klaus Haß
Keyword(s):  
Effective Mass ◽  
Path Integral ◽  
State Energy ◽  
Coulomb Systems ◽  
Integral Approach ◽  
Coupling Region ◽  
Self Energy ◽  
Consistent Approximation ◽  
A Value ◽  
Wide Range

The generalized path integral approach is applied to calculate the ground state energy and the effective mass of an electron-plasmon interacting system for a wide range of densities. It is shown that in the self-consistent approximation an abrupt transition between the weak coupling and the strong coupling region of interaction exists. The transition occurs at low electron densities according to a value of 418 for rs, when Wigner crystallization is possible. For densities of real metals, the electron bandwidth is calculated and a comparison with experimental results is given.

Nitrogen composition dependence of electron effective mass inGaAs1−xNx

2010 ◽  
Vol 82 (12) ◽  
Author(s):  
T. Dannecker ◽  
Y. Jin ◽  
H. Cheng ◽  
C. F. Gorman ◽  
J. Buckeridge ◽  
...  
Keyword(s):  
Effective Mass ◽  
Composition Dependence ◽  
Electron Effective Mass

Temperature dependence of the electron effective mass in InSb

1974 ◽  
Vol 9 (2) ◽  
pp. 568-571 ◽  
Author(s):  
E. S. Koteles ◽  
W. R. Datars
Keyword(s):  
Temperature Dependence ◽  
Effective Mass ◽  
Electron Effective Mass
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