Transmission Electron Microscopy of Excimer Laser Crystallized Amorphous Si Thin Films

1990 ◽  
Vol 192 ◽  
Author(s):  
G. B. Anderson ◽  
R. Z. Bachrach ◽  
K. Winer ◽  
J. B. Boyce ◽  
F. A. Ponce ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Excimer Laser ◽  
Defect Density ◽  
Laser Energy ◽  
Laser Crystallization ◽  
Transmission Electron ◽  
High Resolution Tem ◽  
Stratified Structure

ABSTRACTThe results of a transmission electron microscopy (TEM) study of excimer laser crystallized a-Si:H thin films are described in this paper. High resolution TEM has shown the crystallization threshold of 10−2 P a-Si:H, grown by PECVD, to be 85 mj/cm2. TEM reveals that PECVD a-Si:H films crystallize in a stratified structure at laser energy densities greater than 120 mj/cm2. This stratified structure consists of a polycrystalline Si region near the surface, a microcrystalline region below the polycrystalline region and uncrystallized a-Si near the substrate. The depth of the crystallized region increases as the laser energy density increases. Spherical voids are also present in the film in the microcrystalline region. These voids are formed by H2 evolving from the film during crystallization. TEM also reveals that thermal annealing a 50 nm film of a-Si:H followed by laser crystallization produces 100 nm Si grains with low defect density.

Characterization Of Single Crystal Epitaxial Aluminum Nitride Thin Films On Sapphire, Silicon Carbide And Silicon Substrates By X-Ray Double Crystal Diffractometry And Transmission Electron Microscopy

1995 ◽  
Vol 39 ◽  
pp. 645-651
Author(s):  
J. Chaudhuri ◽  
R. Thokala ◽  
J. H. Edgar ◽  
B. S. Sywe
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
Residual Stress ◽  
Transmission Electron Microscopy ◽  
Silicon Carbide ◽  
Defect Density ◽  
Double Crystal ◽  
X Ray ◽  
Transmission Electron

Epitaxial AIN thin films grown on sapphire, silicon and silicon carbide substrates were studied using x-ray double crystal diffractometry and transmission electron microscopy to compare the structure, residual stress and defect concentration in these thin films. The AIN thin films was found to have a wurtzite type of structure with a small distortion in lattice parameters which results in a small residual stress of the order of 109 dynes/cm2 in the film. The strain due to lattice parameter mismatch between the substrate and film is too small to account for the residual stress present. The calculated stress from the difference in thermal expansion coefficients between the film and substrate agrees well with the experimental values. Both the x-ray and transmission electron microscopy measurements indicate a low defect density in the AIN thin film grown on 6H-SiC substrate which could be attributed to the small difference in lattice parameters between AIN and 6H-SiC. The defect density in the AIN thin film grown on other substrates were considerably higher. This is the first report of the successful growth of single crystal AIN thin films with such a low concentration of defect density.

Structural comparison of Ba1−xKxBiO3 superconducting thin films

1994 ◽  
Vol 9 (2) ◽  
pp. 305-313 ◽  
Author(s):  
C. Ciofi ◽  
C.E. Platt ◽  
J.A. Eades ◽  
Jun Amano ◽  
R. Hu
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Defect Density ◽  
Superconducting Thin Films ◽  
Superconducting Properties ◽  
Structural Comparison ◽  
Transmission Electron ◽  
Different Sources

The microstructure of Ba1−xKxBiO3 (BKBO) thin films from three different sources has been extensively compared by transmission electron microscopy studies. The three films were prepared independently in three different laboratories on three different substrates of (100) orientation and displayed excellent superconducting properties. The observed microstructure is remarkably similar in the three films. They are epitaxial with (100) orientation through all their extension and no cracks have been observed. Their defect density is similar and the resulting extension of defect-free regions is of the order of 50–80 nm.

Domain Structures of Epitaxial SrRuO3 Thin Films

1997 ◽  
Vol 493 ◽  
Author(s):  
J. C. Jiang ◽  
X. Pan ◽  
C. L. Chen
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Structural Characteristics ◽  
Pulsed Laser ◽  
Cross Sectional ◽  
Domain Structures ◽  
Transmission Electron ◽  
High Resolution Tem

ABSTRACTThe structural characteristics of SrRuO3 thin films deposited on a (001) SrTiO3 substrate by pulsed laser were studied by transmission electron microscopy (TEM) and high-resolution TEM. TEM studies of cross-sectional specimens revealed the epitaxial growth of the films with the SrRuO3-(110) plane parallel to the SrTiO3-(001) plane. Two types of 90° rotational domain structures were observed in both cross-sectional and plan-viewing specimens. The in-plane orientations of these domains with respect to the substrate are either of SrRuO3-[110] // SrTiO3 - [100] and SrRuO3-[001] // SrTiO3-[010], or of SrRuO3-[110] // SrTiO3-[010] and SrRuO3-[001] // SrTiO3-[100].

Transmission Electron Microscopy studies of texture of Cr underlayer of magnetic recording hard disk

1991 ◽  
Vol 49 ◽  
pp. 580-581
Author(s):  
L. Tang ◽  
G. Thomas ◽  
M. R. Khan ◽  
S. L. Duan
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Magnetic Recording ◽  
Magnetic Thin Films ◽  
Magnetic Films ◽  
Substrate Bias ◽  
Epitaxial Relationship ◽  
Transmission Electron

Cr thin films are often used as underlayers for Co alloy magnetic thin films, such as Co1, CoNi2, and CoNiCr3, for high density longitudinal magnetic recording. It is belived that the role of the Cr underlayer is to control the growth and texture of the Co alloy magnetic thin films, and, then, to increase the in plane coercivity of the films. Although many epitaxial relationship between the Cr underlayer and the magnetic films, such as ﹛1010﹜Co/ {110﹜Cr4, ﹛2110﹜Co/ ﹛001﹜Cr5, ﹛0002﹜Co/﹛110﹜Cr6, have been suggested and appear to be related to the Cr thickness, the texture of the Cr underlayer itself is still not understood very well. In this study, the texture of a 2000 Å thick Cr underlayer on Nip/Al substrate for thin films of (Co75Ni25)1-xTix dc-sputtered with - 200 V substrate bias is investigated by electron microscopy.

Transmission Electron Microscopy of Evaporated Perylene Thin Films

1990 ◽  
Vol 48 (2) ◽  
pp. 336-337
Author(s):  
C. Ewins ◽  
J.R. Fryer
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Molecular Electronics ◽  
High Vacuum ◽  
Amorphous Layer ◽  
Electric Heater ◽  
Transmission Electron ◽  
Polycyclic Aromatic

The preparation of thin films of organic molecules is currently receiving much attention because of the need to produce good quality thin films for molecular electronics. We have produced thin films of the polycyclic aromatic, perylene C10H12 by evaporation under high vacuum onto a potassium chloride (KCl) substrate. The role of substrate temperature in determining the morphology and crystallography of the films was then investigated by transmission electron microscopy (TEM).The substrate studied was the (001) face of a freshly cleaved crystal of KCl. The temperature of the KCl was controlled by an electric heater or a cold finger. The KCl was heated to 200°C under a vacuum of 10-6 torr and allowed to cool to the desired temperature. The perylene was then evaporated over a period of one minute from a molybdenum boat at a distance of 10cm from the KCl. The perylene thin film was then backed with an amorphous layer of carbon and floated onto copper microscope grids.

Epitaxy and texture analysis of Bi-Sr-Ca-Cu-O thin films on (100) MgO using Transmission Electron Microscopy

1990 ◽  
Vol 48 (4) ◽  
pp. 68-69
Author(s):  
J. T. Sizemore ◽  
D. G. Schlom ◽  
Z. J. Chen ◽  
J. N. Eckstein ◽  
I. Bozovic ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Critical Currents ◽  
Unit Cell ◽  
X Ray Diffraction ◽  
Cell Axis ◽  
Transmission Electron ◽  
Synthesis Procedure

Investigators observe large critical currents for superconducting thin films deposited epitaxially on single crystal substrates. The orientation of these films is often characterized by specifying the unit cell axis that is perpendicular to the substrate. This omits specifying the orientation of the other unit cell axes and grain boundary angles between grains of the thin film. Misorientation between grains of YBa2Cu3O7−δ decreases the critical current, even in those films that are c axis oriented. We presume that these results are similar for bismuth based superconductors and report the epitaxial orientations and textures observed in such films.Thin films of nominally Bi2Sr2CaCu2Ox were deposited on MgO using molecular beam epitaxy (MBE). These films were in situ grown (during growth oxygen was incorporated and the films were not oxygen post-annealed) and shuttering was used to encourage c axis growth. Other papers report the details of the synthesis procedure. The films were characterized using x-ray diffraction (XRD) and transmission electron microscopy (TEM).

TEM Characterization of As-Deposited and Annealed Ni/Al Multilayer Thin Film

2010 ◽  
Vol 16 (6) ◽  
pp. 662-669 ◽  
Author(s):  
S. Simões ◽  
F. Viana ◽  
A.S. Ramos ◽  
M.T. Vieira ◽  
M.F. Vieira
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Cross Section ◽  
Ion Beam ◽  
Microstructural Characterization ◽  
Multilayer Thin Films ◽  
Tem Analysis ◽  
Plan View ◽  
Transmission Electron

AbstractReactive multilayer thin films that undergo highly exothermic reactions are attractive choices for applications in ignition, propulsion, and joining systems. Ni/Al reactive multilayer thin films were deposited by dc magnetron sputtering with a period of 14 nm. The microstructure of the as-deposited and heat-treated Ni/Al multilayers was studied by transmission electron microscopy (TEM) and scanning transmission electron microscopy (STEM) in plan view and in cross section. The cross-section samples for TEM and STEM were prepared by focused ion beam lift-out technique. TEM analysis indicates that the as-deposited samples were composed of Ni and Al. High-resolution TEM images reveal the presence of NiAl in small localized regions. Microstructural characterization shows that heat treating at 450 and 700°C transforms the Ni/Al multilayered structure into equiaxed NiAl fine grains.

Sign in / Sign up

Export Citation Format

Share Document