High Rate Growth of YBa2Cu3O7-x Thin Films using Pulsed Excimer Laser Deposition

1990 ◽  
Vol 191 ◽  
Author(s):  
R. E. Muenchausen ◽  
X. D. Wu ◽  
S. Foltyn ◽  
R. C. Estler ◽  
R. C. Dye ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
High Rate ◽  
High Quality ◽  
Deposition Rates ◽  
Rocking Curve ◽  
X Ray ◽  
Current Densities

ABSTRACTWe report here on the pulsed laser deposition of high quality, superconducting, 200 nm thick films of YBa2Cu3O7-x at rates approaching 15 nm/s. Film crystallinity and electrical properties were studied as a function of deposition rate from 0.1 to 14.5 nm/s. Though some degradation in the film crystallinity is observed by RBS channeling and X-ray rocking curve measurements, critical current densities (Jc = 4 × 106 A/cm2, 77 K, B = 0) are effectively unchanged in going to the higher deposition rates.

CRYSTALLINE SrTiO3 THIN FILMS ON SILICON BY PULSED LASER DEPOSITION

2005 ◽  
Vol 19 (01n03) ◽  
pp. 533-535
Author(s):  
J. H. HAO ◽  
J. GAO
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Perovskite Oxide ◽  
Deposition Technique ◽  
X Ray Diffraction ◽  
Rocking Curve ◽  
X Ray ◽  
Silicon Materials

We have developed a process to grow SrTiO 3 ( STO ) thin films showing single (110) orientation directly on Si by means of pulsed laser deposition technique. The growth of STO films directly on Si has been described. The crystallinity of the grown STO films was characterized by X-ray diffraction analysis of θ-2θ scan and rocking curve. Our results may be of interest for better understanding of the growth based on the perovskite oxide thin films on silicon materials.

Thermoelectric Properties of C-Axis-Oriented Ca3Co4O9+δ Films Grown on MgO-Buffered Si (100) by PLD Technique

2010 ◽  
Vol 29-32 ◽  
pp. 1913-1918
Author(s):  
Xia Zhang ◽  
Hong Chen ◽  
Qiu Hui Liao ◽  
Xia Li
Keyword(s):  
Thin Films ◽  
State Of The Art ◽  
Pulsed Laser ◽  
Buffer Layers ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
High Quality ◽  
X Ray ◽  
Current State ◽  
Good Crystallinity

High-quality c-axis-oriented Ca3Co4O9+δ thin films have been grown directly on Si (100) wafers with inserting MgO buffer layers by pulsed-laser deposition (PLD). X-ray diffraction and scan electron microscopy show good crystallinity of the Ca3Co4O9+δ films. The resistivity and Seebeck coefficient of the Ca3Co4O9+δ thin films on Si (100) substrates are 9.8 mΩcm and 189 μV/K at the temperature of 500K, respectively, comparable to the single-crystal samples. This advance demonstrates the possibility of integrating the cobaltate-based high thermoelectric materials with the current state-of-the-art silicon technology for thermoelectricity-on-a-chip applications.

Pulsed laser deposition and characterization of conductive RuO2 thin films

1997 ◽  
Vol 12 (6) ◽  
pp. 1433-1436 ◽  
Author(s):  
A. Iembo ◽  
F. Fuso ◽  
E. Arimondo ◽  
C. Ciofi ◽  
G. Pennelli ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Electrical Properties ◽  
Pulsed Laser Deposition ◽  
Photoelectron Spectroscopy ◽  
Pulsed Laser ◽  
Surface Characteristics ◽  
Laser Deposition ◽  
X Ray ◽  
Substrate Interface

RuO2 thin films have been produced on silicon-based substrates by in situ pulsed laser deposition for the first time. The electrical properties, the surface characteristics, the crystalline structure, and the film-substrate interface of deposited samples have been investigated by 4-probe resistance versus temperature technique, scanning electron microscopy, x-ray photoelectron spectroscopy, x-ray diffraction, and transmission electron microscopy, respectively. The films show good electrical properties. The RuO2-substrate interface is very thin (≈3 nm), since it is not degraded by any annealing process. These two characteristics render our films suitable to be used as electrodes in PZT-based capacitors.

Epitaxial Growth of GaN Thin Films Using a Hybrid Pulsed Laser Deposition System

1999 ◽  
Vol 572 ◽  
Author(s):  
Philippe Mérel ◽  
Mohamed Chaker ◽  
Henri Pépin ◽  
Malek Tabbal
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Epitaxial Growth ◽  
Laser Intensity ◽  
Pulsed Laser ◽  
Growth Conditions ◽  
Laser Deposition ◽  
Nitrogen Flux ◽  
High Quality ◽  
Rocking Curve

ABSTRACTA hybrid Pulsed Laser Deposition system was developed to perform epitaxial growth of GaN on sapphire(0001). This system combines the laser ablation of a cooled Ga target with a well-characterized atomic nitrogen source. Taking advantage of the flexibility of this unique deposition system, high quality GaN thin films were deposited by optimizing both the laser intensity and the nitrogen flux. To date, our best GaN films show a FWHM of the GaN(0002) rocking curve peak equal to 480 arcsec. This result has been obtained at a laser intensity of I = 7×107 W/cm2, a substrate temperature of 800°C and under Ga-rich growth conditions.

Texturing and Dielectric Properties of Laser Deposited BaTiO3 Thin Films Grown on Heated Substrates

1991 ◽  
Vol 243 ◽  
Author(s):  
M.D. Vaudin ◽  
L.P. Cook ◽  
W. Wong-Ng ◽  
P.K. Schenck ◽  
P.S. Brody ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Dielectric Properties ◽  
Electrical Properties ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Electrical Measurements ◽  
X Ray

AbstractThin films of BaTiO3 were deposited on platinum-coated silicon substrates using pulsed laser deposition and characterized using electron microscopy, powder x-ray diffraction and electrical measurements. The microstructure consisted of columnar BaTiO3 grains oriented normal to the substrate. Two preferred orientations were observed, with either the (001) or (111) planes of BaTiO3 being parallel to the substrate. The electrical properties of two films were measured and it was found that the (111) film was ferroelectric and the (001) film was not. Possible reasons for this are discussed.

Highly Doped P-Type and N-Type ZnS, ZnSe, CdS and CdSe Thin Films Growth by Pulsed Laser Deposition

1994 ◽  
Vol 340 ◽  
Author(s):  
Wenpin P. Shen ◽  
Hoi S. Kwok
Keyword(s):  
Thin Films ◽  
Visible Region ◽  
Optoelectronic Devices ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
High Quality ◽  
X Ray ◽  
Gaas Substrates ◽  
P Type

ABSTRACTZnS, ZnSe, CdS and CdSe thin films were grown on InP or GaAs substrates with high ptype and n-type doping concentrations by pulsed excimer laser deposition without any postannealing processing. The x-ray diffraction results showed that these thin films were fully epitaxial (in-plane aligned). These high quality films are suitable for use as optoelectronic devices which will operate in the visible region of the spectrum.

Effect of Cu Dopant on the Electrical Property of ZnO Thin Films Deposited by Pulsed Laser Deposition

2007 ◽  
Vol 124-126 ◽  
pp. 339-342
Author(s):  
Gun Hee Kim ◽  
Hong Seong Kang ◽  
Dong Lim Kim ◽  
Hyun Woo Chang ◽  
Byung Du Ahn ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Zno Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Doped Zno ◽  
Deposition Conditions

Cu-doped ZnO (denoted by ZnO:Cu) films have been prepared by pulsed laser deposition using 3 wt. CuO doped ZnO ceramic target. The carrier concentrations (1011~1018 cm-3) and, electrical resistivity (10-1~105 cm) of deposited Cu-doped ZnO thin films were varied depending on deposition conditions. Variations of electrical properties of Cu-doped ZnO indicate that copper dopants may play an important role in determining their electrical properties, compared with undoped films. To investigate effects of copper dopants on the properties of ZnO thin films, X-Ray diffraction (XRD), photoluminescence (PL), and Hall measurements have been performed and corresponded.

Ferroelectric Properties and Microstructures of Bi4-xDyxTi3O12 Thin Films

2014 ◽  
Vol 633 ◽  
pp. 378-381
Author(s):  
Bei Li ◽  
X.B. Liu ◽  
M. Chen ◽  
X.A. Mei
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Layered Structure ◽  
Remanent Polarization ◽  
Single Phase ◽  
Ferroelectric Properties ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Deposition Technique ◽  
Si Substrates

Dy-doped Bi4Ti3O12 thin films were fabricated on Pt/Ti/SiO2/Si substrates by pulsed laser deposition technique, and the structures and electrical properties of the films were investigated. XRD results indicated that all of Bi4-xDyxTi3O12 films consisted of single phase of a bismuth-layered structure with well-developed rod-like grains. The remanent polarization ( Pr ) and coercive field (Ec) of the Bi4-xDyxTi3O12 Film with x=0.75 were 25μC/cm2 and 85KV/cm , respectively.

Study of Raman Spectrum of Fe Doped CeO2 Thin Films Grown by Pulsed Laser Deposition

2010 ◽  
Vol 123-125 ◽  
pp. 375-378 ◽  
Author(s):  
Ram Prakash ◽  
Shalendra Kumar ◽  
Chan Gyu Lee ◽  
S.K. Sharma ◽  
Marcelo Knobel ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Single Phase ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Fe Doping ◽  
Full Width ◽  
Deposition Technique ◽  
X Ray Diffraction ◽  
X Ray

Ce1-xFexO2 (x=0, 0.01, 0.03 and 0.0 5) thin films were grown by pulsed laser deposition technique on Si and LaAlO3 (LAO) substrates. These films were deposited in vacuum and 200 mTorr oxygen partial pressure for both the substrates. These films were characterized by x-ray diffraction XRD and Raman spectroscopy measurements. XRD results reveal that these films are single phase. Raman results show F2g mode at ~466 cm-1 and defect peak at 489 cm-1 for film that deposited on LAO substrates, full width at half maximum (FWHM) is increasing with Fe doping for films deposited on both the substrates.

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