Effect of Substrate on the Early Stages of the Growth of YBa2Cu3O7-δ Thin-Films

1990 ◽  
Vol 191 ◽  
Author(s):  
M. Grant Norton ◽  
C. Barry Carter
Keyword(s):  
Thin Films ◽  
Growth Process ◽  
Critical Role ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
High Quality ◽  
Ceramic Substrates ◽  
Early Stages ◽  
Substrate Structure ◽  
Transmission Electron

ABSTRACTThe fabrication of high-quality thin-films often depends on the early stages of the growth process during which epitaxy is established. The substrate structure and orientation generally play a critical role at this stage through epitaxy and interaction or reaction. Many different materials are being used as substrates to support thin-films of the YBa2Cu3O7-δ superconductors. In this study the early stages of the growth of YBa2Cu3O7-δ thin-films have been investigated using transmission electron microscopy (TEM). Using pulsed-laser ablation, ultra-thin films were formed directly onto self-supporting, ion-thinned, single-crystal ceramic substrates. The substrates used were (001)-oriented MgO, (001)-oriented SrTiO3 and (001)-oriented LaAlO3.

Observation of the early stages of heteroepitactic growth of BaTiO3 thin-films

1990 ◽  
Vol 5 (12) ◽  
pp. 2762-2765 ◽  
Author(s):  
M. Grant Norton ◽  
C. Barry Carter
Keyword(s):  
Thin Films ◽  
Film Growth ◽  
Stoichiometric Composition ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Thin Foil ◽  
Nucleation And Growth ◽  
Small Islands ◽  
Early Stages ◽  
Transmission Electron

Thin-films of barium titanate (BaTiO3) have been deposited onto single-crystal MgO substrates using pulsed-laser ablation. The early stages of film growth have been examined using transmission electron microscopy by deposition of very thin films onto specially prepared electron transparent thin-foil substrates. The films, which were crystalline as deposited and close to stoichiometric composition, were formed by the nucleation and growth of small islands.

High quality β-FeSi2 thin films prepared on silicon (100) by using pulsed laser ablation of Fe target

2012 ◽  
Vol 135 (2-3) ◽  
pp. 991-997 ◽  
Author(s):  
S.C. Xu ◽  
C. Yang ◽  
M. Liu ◽  
S.Z. Jiang ◽  
Y.Y. Ma ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
High Quality

IMPROVEMENT OF THE SURFACE ROUGHNESS OF LaAlO3 SUBSTRATE BY DEPOSITING ANOTHER LAYER OF LaAlO3

1993 ◽  
Vol 07 (11) ◽  
pp. 743-746
Author(s):  
YONGJUN TIAN ◽  
HUIBIN LU ◽  
SHIFA XU ◽  
DAFU CUI ◽  
ZHENHAO CHEN ◽  
...  
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Laser Ablation ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
High Quality ◽  
Surface Profiles ◽  
Deposited Films

LaAlO 3 thin films have been deposited on (100) LaAlO 3 substrates by pulsed laser ablation. The deposited films showed the (h00) preferential orientations. Surface profiles indicated that the surface roughness of the films decreased with the increase of the oxygen partial pressure. High quality superconducting YBa 2 Cu 3 O 7 thin films have been successfully deposited by laser ablation on the (100) LaAlO 3 substrates with the LaAlO 3 layers.

Early stages of the growth of BaTiO3 thin films studied by Transmission Electron Microscopy

1990 ◽  
Vol 48 (4) ◽  
pp. 706-707
Author(s):  
M. Grant Norton ◽  
Gerald R. English ◽  
Christopher Scarfone ◽  
C. Barry Carter
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Room Temperature ◽  
High Temperature Superconductors ◽  
Pulsed Laser ◽  
Target Material ◽  
Pulsed Laser Ablation ◽  
Cubic Phase ◽  
Transmission Electron ◽  
Tetragonal Form

Barium titanate (BaTiO3) may be used in a number of thin-film applications in electronic and optoelectronic devices. For these devices the formation of epitactic films of the correct stoichiometry and phase is essential. In particular, the tetragonal form of BaTiO3, which is stable at room temperature, exhibits ferro-, pyro- and piezoelectric properties. It is desirable to form films of the tetragonal phase directly and thus to avoid formation of either amorphous or polycrystalline material or to form material of the non-ferroelectric cubic phase. Recently two techniques, pulsed-laser ablation and reactive evaporation, have been used to form BaTiO3 thin-films. In the present study BaTiO3 thin-films have been formed using the pulsed-laser ablation technique. Pulsed-laser ablation is now widely used to produce thin-films of the high temperature superconductors and has many advantages over other techniques, in particular the formation of films which maintain the stoichiometry of the target material and by controlling the processing conditions the formation of films having defined crystalline phases.

Early Stages of Growth of BaTiO3 Thin-Films

1990 ◽  
Vol 200 ◽  
Author(s):  
M. Grant Norton ◽  
Gerald R. English ◽  
C. Barry Carter
Keyword(s):  
Thin Films ◽  
Film Growth ◽  
Lattice Mismatch ◽  
Pulsed Laser ◽  
Surface Preparation ◽  
Thin Foil ◽  
Stages Of Growth ◽  
Early Stages ◽  
Transmission Electron ◽  
Film Nucleation

ABSTRACTBarium titanate (BaTiO3) is of interest for use in a number of thin-film applications in electronic and optoelectronic devices. For these devices the formation of epitactic films of the correct stoichiometry and phase is essential. The substrate is important during the early stages of growth in the establishment of epitaxy, factors such as lattice mismatch, surface preparation and crystallographic orientation can all affect film nucleation and growth. In this study thin-films of BaTiO3 have been formed using the pulsed-laser ablation technique. The early stages of film growth have been studied directly using transmission electron microscopy by examination of very thin films deposited onto specially prepared electron-transparent thin-foil substrates.

Epitaxy of barium titanate thin films grown on MgO by pulsed-laser ablation

1991 ◽  
Vol 6 (10) ◽  
pp. 2022-2025 ◽  
Author(s):  
M. Grant Norton ◽  
Christopher Scarfone ◽  
Jian Li ◽  
C. Barry Carter ◽  
James W. Mayer
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Barium Titanate ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Oxygen Stoichiometry ◽  
Ion Channeling ◽  
Transmission Electron ◽  
Film Substrate ◽  
Α Particles

Thin films of barium titanate (BaTiO3) have been deposited by pulsed-laser ablation onto (001)-oriented MgO substrates. The films were epitactic with the c-axis perpendicular to the film-substrate interface, as evidenced by both transmission electron microscopy (TEM) and ion-channeling techniques. The elastic resonance of 3.045 MeV α-particles, generating the 16O(α, α)16O reaction was used to determine the oxygen stoichiometry of the film and the minimum yield based on the oxygen peaks, thereby enabling conclusions to be drawn about the crystalline perfection of the oxygen sublattice.

Direct Observation by Transmission Electron Microscopy of the Early Stages of Growth of Superconducting Thin Films

1989 ◽  
Vol 169 ◽  
Author(s):  
M. Grant Norton ◽  
Lisa A. Tietz ◽  
Scott R. Summerfelt ◽  
C. Barry Carter
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Substrate Surface ◽  
Critical Role ◽  
Specimen Preparation ◽  
Superconducting Thin Films ◽  
Ion Milling ◽  
Early Stages ◽  
Transmission Electron

AbstractThe fabrication of high quality thin films often depends on the early stages of the growth process during which epitaxy is established. The substrate surface structure generally plays a critical role at this stage. Many observations of the high‐Tc superconductor film‐substrate interface structure and chemistry have been made by transmission electron microscopy (TEM) of cross‐section samples. Ion‐milling induced damage, however, can be severe in these specimens. In the present study, the early stages of the growth of high Tc superconducting thin films of YBa2Cu3O7δ have been studied by TEM using a technique which requires no post‐deposition specimen preparation.

Consideration of growth process of diamond thin films in ambient oxygen by pulsed laser ablation of graphite

2002 ◽  
Vol 197-198 ◽  
pp. 352-356 ◽  
Author(s):  
Tsuyoshi Yoshitake ◽  
Takashi Nishiyama ◽  
Takeshi Hara ◽  
Kunihito Nagayama
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Growth Process ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Ambient Oxygen ◽  
Diamond Thin Films

Synthesis and properties of p-type nitrogen-doped ZnO thin films by pulsed laser ablation of a Zn-rich Zn3N2 target

2007 ◽  
Vol 22 (8) ◽  
pp. 2339-2344 ◽  
Author(s):  
A. Allenic ◽  
W. Guo ◽  
Y.B. Chen ◽  
G.Y. Zhao ◽  
X.Q. Pan ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Zno Thin Films ◽  
Zno Films ◽  
Transmission Electron ◽  
Columnar Grains ◽  
P Type ◽  
20 Nm

Epitaxial ZnO thin films doped uniformly with nitrogen at 1020 atoms/cm3 were fabricated by pulsed laser ablation of a Zn-rich Zn3N2 target. The films grown at 300 °C and annealed at 600 °C in O2 showed p-type conductivity. Two acceptor levels at 105 and 224 meV were determined by temperature-dependent Hall and photoluminescence measurements of the p-type samples. Transmission electron microscopy studies revealed that the p-type ZnO films consist of 10–20 nm columnar grains with a high density of defects and grain boundaries that may facilitate the annihilation of native donors and the activation of acceptors during postdeposition annealing.

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