Mn–In–Co, Mn–Pt and Mn–In–Pt Based Contacts to p–GaAs

1990 ◽  
Vol 181 ◽  
Author(s):  
T. S. Kalkur ◽  
Y. C. Lu ◽  
M. Rowe
Keyword(s):  
Ohmic Contact ◽  
Annealing Temperature ◽  
Heat Pulse ◽  
Nitrogen Atmosphere ◽  
Contact Resistivity ◽  
Pulse System ◽  
Auger Analysis ◽  
Temperature Range ◽  
Contact Metallization ◽  
Surface Morphologies

ABSTRACTMn–In–Co, Mn–In–Pt and Mn–Pt metallizations are used to form ohmic contact on Be-implanted rapid thermally annealed GaAs. The rapid thermal alloying of contact metallizations are performed in A.G. Associates Heat pulse system in nitrogen atmosphere in the temperature range of 350°C to 800°C for 5 seconds. The contacts were found to be ohmic at an annealing temperature of 450°C. The In–Mn–Co metallization showed higher minimum contact resistivity (5 × 10−4 ohm.cm2 ) than In–Mn–Pt metallization (1.5 × 10−5 ohm.cm2 ) for an annealing temperature of 700°C and time 5 seconds. The surface morphologies of In–Mn–Pt metallizations were smooth even after alloying at 700°C for 5 seconds. The Auger analysis shows outdiffusion of Ga and As into the contact metallization and negligible indiffusion of In and Mn into GaAs.

Backside Nickel Based Ohmic Contacts to n-Type Silicon Carbide

2008 ◽  
Vol 600-603 ◽  
pp. 635-638 ◽  
Author(s):  
Reza Ghandi ◽  
Hyung Seok Lee ◽  
Martin Domeij ◽  
Carl Mikael Zetterling ◽  
Mikael Östling
Keyword(s):  
Silicon Carbide ◽  
Ohmic Contacts ◽  
Annealing Temperature ◽  
Contact Resistivity ◽  
Optimum Conditions ◽  
Power Devices ◽  
High Quality ◽  
Temperature Range ◽  
Type Silicon ◽  
Different Temperatures

This work focuses on Ni ohmic contacts to the C-face (backside) of n-type 4H-SiC substrates. Low-resistive ohmic contacts to the wafer backside are important especially for vertical power devices. Ni contacts were deposited using E-beam evaporation and annealed at different temperatures (700-1050 °C) in RTP to obtain optimum conditions for forming low resistive ohmic contacts. Our results indicate that 1 min annealing at temperatures between 950 and 1000 °C provides high quality ohmic contacts with a contact resistivity of 2.3x10-5 Ωcm2. Also our XRD results show that different Ni silicide phases appear in this annealing temperature range.

scholarly journals Toward a Better Understanding of Ni-Based Ohmic Contacts on SiC

2011 ◽  
Vol 679-680 ◽  
pp. 465-468 ◽  
Author(s):  
Satoshi Tanimoto ◽  
Masanori Miyabe ◽  
Takamitsu Shiiyama ◽  
Tatsuhiro Suzuki ◽  
Hiroshi Yamaguchi ◽  
...  
Keyword(s):  
Thin Layer ◽  
Ohmic Contacts ◽  
Annealing Temperature ◽  
Contact Resistivity ◽  
Temperature Range ◽  
Carbon Vacancy ◽  
Substrate Interface ◽  
Plausible Model

There is still little consensus regarding why low contact resistivity is achieved when Ni on n-type 4H- and 6H-SiC is annealed at temperatures of more than above 950°C. The objective of this paper is to provide an answer concerning to this question. It is has been reported that even Ni-based contacts formed in the n++ region exhibited a steep reduction of contact resistivity in an annealing temperature range > 900°C. This effect reduction cannot be explained by the carbon vacancy induced donor model (Vc model) proposed by Han and his coworkers [Appl. Phys. Lett., Vol. 79, p. 1816 (2001)]. And, it is clarified that It was observed that the surface of substrates annealed at 1000°C was not covered with not Ni2Si but with a thin layer of NiSi. Finally, a plausible model is proposed that as the result of annealing at higher temperatures, results in the formation of the a NiSi/SiC system is builtat the substrate interface, resulting in significant reduction in low causing contact resistivity to be reduced significantly.

Mo—In—Mn Based Ohmic Contact to P—GaAs

1989 ◽  
Vol 146 ◽  
Author(s):  
T.S. Kalkur ◽  
Y.C. Lu ◽  
Robert Caracciolo
Keyword(s):  
Ohmic Contact ◽  
Heat Pulse ◽  
X Ray Diffraction ◽  
X Ray ◽  
Resistivity Measurements ◽  
Contact Metallization ◽  
Current Voltage ◽  
Gas Atmosphere ◽  
Secondary Ion ◽  
Scanning Electron

ABSTRACTMo—In—Mn metallization is used to form ohmic contact on Be—implanted Rapid Thermally annealed GaAs. The rapid thermal alloying of Mo—In—Mn contact metallization is performed at various temperatures and times in A.G. Associates Heat Pulse 410 system in forming gas atmosphere. The electrical properties of the contacts were analyzed by current-voltage and contact resistivity measurements. The microstructures of the contacts were analyzed using scanning electron microscope, energy dispersive x-ray analysis, x-ray diffraction and secondary ion mass spectroscopy.

About the Electrical Activation of 1×1020 cm-3 Ion Implanted Al in 4H-SiC at Annealing Temperatures in the Range 1500 - 1950°C

2018 ◽  
Vol 924 ◽  
pp. 333-338 ◽  
Author(s):  
Roberta Nipoti ◽  
Alberto Carnera ◽  
Giovanni Alfieri ◽  
Lukas Kranz
Keyword(s):  
Activation Energy ◽  
Sheet Resistance ◽  
Annealing Time ◽  
Thermal Activation ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Thermal Activation Energy ◽  
Electrical Activation ◽  
Temperature Range ◽  
Annealing Temperatures

The electrical activation of 1×1020cm-3implanted Al in 4H-SiC has been studied in the temperature range 1500 - 1950 °C by the analysis of the sheet resistance of the Al implanted layers, as measured at room temperature. The minimum annealing time for reaching stationary electrical at fixed annealing temperature has been found. The samples with stationary electrical activation have been used to estimate the thermal activation energy for the electrical activation of the implanted Al.

scholarly journals Behavior of W and WSix Contact Metallization on n- and p- Type GaN

1999 ◽  
Vol 4 (S1) ◽  
pp. 684-690
Author(s):  
X. A. Cao ◽  
F. Ren ◽  
J. R. Lothian ◽  
S. J. Pearton ◽  
C. R. Abernathy ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Annealing Temperature ◽  
Specific Contact Resistance ◽  
Ohmic Behavior ◽  
Contact Metallization ◽  
Specific Contact ◽  
Heavily Doped ◽  
Sputter Deposited ◽  
Optimum Annealing Temperature ◽  
P Type

Sputter-deposited W-based contacts on p-GaN (NA∼1018 cm−3) display non-ohmic behavior independent of annealing temperature when measured at 25°C. The transition to ohmic behavior occurs above ∼250°C as more of the acceptors become ionized. The optimum annealing temperature is ∼700°C under these conditions. These contacts are much more thermally stable than the conventional Ni/Au metallization, which shows a severely degraded morphology even at 700°C. W-based contacts may be ohmic as-deposited on very heavily doped n-GaN, and the specific contact resistance improves with annealing up to ∼900°C.

Reduction of ohmic contact resistivity on p-GaN using N2plasma surface treatment at room temperature

2006 ◽  
Vol 21 (12) ◽  
pp. 1597-1599 ◽  
Author(s):  
Yingwen Tang ◽  
Da You ◽  
Jintong Xu ◽  
Xue Li ◽  
Xiangyang Li ◽  
...  
Keyword(s):  
Surface Treatment ◽  
Ohmic Contact ◽  
Room Temperature ◽  
Contact Resistivity

Dependence of the Au/Ni/Si/Ni Contact Properties on the Si-layer Thickness and the Annealing Temperature in p-type GaN Epilayers

2002 ◽  
Vol 17 (5) ◽  
pp. 1019-1023 ◽  
Author(s):  
S.J. Yang ◽  
T.W. Kang ◽  
T.W. Kim ◽  
K.S. Chung
Keyword(s):  
Layer Thickness ◽  
Annealing Temperature ◽  
Electron Beam Evaporation ◽  
Nitrogen Atmosphere ◽  
Specific Contact Resistance ◽  
X Ray Diffraction ◽  
Specific Contact ◽  
Potential Applications ◽  
Increasing Temperature ◽  
P Type

The dependences of the properties of Au/Ni/Si/Ni contacts, deposited on p-GaN epilayers by using electron-beam evaporation, on the Si layer thickness and the annealing temperature were investigated with the goal of producing contacts with low specific resistances. The results of the current–voltage (I–V) curves showed that the lowest specific contact resistance obtained for the Au/Ni/Si/Ni contact with a 1200-Å- thick Si layer on p-type GaN annealed at 700 °C for 1 min in a nitrogen atmosphere was 8.49 × 10-4 Ω cm2. The x-ray diffraction (XRD) measurements on the annealed Au/Ni/Si/Ni/p-GaN/sapphire heterostructure showed that Ni3Si, GaAu, and NiGa layers were formed at the Au/Ni/Si/Ni/p-GaN interfaces. While the intensities corresponding to the Ni3Si layer decreased with increasing annealing temperature above 700 °C, those related to the GaAu and the NiGa layers increased with increasing temperature. These results indicate that the Au/Ni/Si/Ni contacts with 1200-Å-thick Si layers annealed at 700 °C hold promise for potential applications in p-GaN-based optoelectronic devices.

Improvement in Contact Resistivity to thin film Bi2Te3

2010 ◽  
Vol 1267 ◽  
Author(s):  
Rahul P Gupta ◽  
Ka Xiong ◽  
John B White ◽  
Kyeongjae Cho ◽  
Bruce Gnade
Keyword(s):  
Thin Film ◽  
Contact Resistance ◽  
Surface Preparation ◽  
Contact Resistivity ◽  
Post Deposition Annealing ◽  
Contact Metallization ◽  
Potential Contact ◽  
Te Material ◽  
The Impact ◽  
Post Deposition

AbstractA study of the impact of surface preparation and post-deposition annealing on contact resistivity for sputtered Ni and Co contacts to thin film Bi2Te3 is presented. The contact resistance values obtained using the transfer length method (TLM) for Ni is compared to Co as a potential contact metal to Bi2Te3. Post-deposition annealing at 100°C on samples that were sputter cleaned reduces the contact resistivity to < 10-7 Ω-cm2 for both Ni and Co contacts to Bi2Te3. Co provided similar contact resistance values as Ni, but had better adhesion and less diffusion into the thermoelectric (TE) material, making it a suitable candidate for contact metallization to Bi2Te3 based devices.

Influence of a new surface treatment method on ohmic contact resistivity of p-type GaN

2005 ◽  
Author(s):  
Yingwen Tang ◽  
Xue Li ◽  
Yong Kang ◽  
Xiangyang Li ◽  
Haimei Gong
Keyword(s):  
Surface Treatment ◽  
Ohmic Contact ◽  
Treatment Method ◽  
Contact Resistivity ◽  
P Type
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