Growth and Characterization of Epitaxial CoSi2-Contacts

1990 ◽  
Vol 181 ◽  
Author(s):  
C. Adamski ◽  
S. Meiser ◽  
D. Uffmann ◽  
L. Niewöhner ◽  
C. Schäffer
Keyword(s):  
Contact Resistance ◽  
Specific Contact Resistance ◽  
Dopant Distribution ◽  
Silicide Formation ◽  
Specific Contact ◽  
Ion Implanted

ABSTRACTThe growth of epitaxial CoSi2 by means of SPE on heavily ion implanted Si(111) was investigated with LEED, RBS and TEM. After silicide formation, the dopant distribution in silicide and silicon was determined by means of SIMS. In a self-aligned process epitaxial CoSi2/Si p+ contacts have been produced. The specific contact resistance was found to be lower than for polycrystalline CoSi2 contacts.

Characterization of the Al/RuO2 Interface Upon Thermal Annealing

1990 ◽  
Vol 181 ◽  
Author(s):  
Quat T. Vu ◽  
E. Kolawa ◽  
M-A. Nicolet
Keyword(s):  
Contact Resistance ◽  
Annealing Temperature ◽  
Electrical Measurement ◽  
Specific Contact Resistance ◽  
Annealing Duration ◽  
Type Model ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Specific Contact

ABSTRACTWe have characterized the Al/RuO2 interface after annealing at temperatures in the range 450° C-550° C for durations up to several hours by backscattering spectrometry, cross-sectional transmission electron microscopy, and electrical four point probe measurement of specially designed structures. The electrical measurement yields the specific contact resistance of the interface by applying a transmission line type model developped for this purpose. An interfacial aluminum-oxygen polycrystalline compound is shown to grow with annealing temperature and duration, with a concurrent reduction of a thin layer of RuO2. However, the specific contact resistance between Al and RuO2 is found to decrease with annealing duration at 500°C. This last result indicates that the interfacial reaction does not lead to an insulating interface as could have been expected if the growth were pure and dense A12O3.

Formation and Characterization of Ohmic Contacts on Diamond

1992 ◽  
Vol 270 ◽  
Author(s):  
V. Venkatesan ◽  
D.M. Malta ◽  
K. Das
Keyword(s):  
Ion Implantation ◽  
Contact Resistance ◽  
Ohmic Contacts ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Temperature Cycling ◽  
Specific Contact Resistance ◽  
Naturally Occurring ◽  
Specific Contact

ABSTRACTLow resistance ohmic contacts have been fabricated on a naturally occurring lib diamond crystal and on polycrystalline diamond films by B ion-implantation and subsequent Ti/Au bilayer metallization. A high B concentration was obtained at the surface by ion implantation, a postimplant anneal and a subsequent chemical removal of the graphite layer. A bilayer metallization of Ti followed by Au, annealed at 850°C, yielded specific contact resistance values (as measured using a standard transmission line model (TLM) pattern) of the order of 10-5 Ω cm2 for chemical vapor deposition (CVD) grown polycrystalline films and the natural lib crystal. Specific contact resistance values have also been determined from circular TLM measurements on CVD films and the values compared to those from standard TLM measurements. These contacts were stable to a measurement temperature of ∼400°C and no degradation due to temperature cycling was observed.

Characterization of specific contact resistance on heavily phosphorus-doped diamond films

2009 ◽  
Vol 18 (5-8) ◽  
pp. 782-785 ◽  
Author(s):  
Hiromitsu Kato ◽  
Daisuke Takeuchi ◽  
Norio Tokuda ◽  
Hitoshi Umezawa ◽  
Hideyo Okushi ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Diamond Films ◽  
Specific Contact Resistance ◽  
Specific Contact ◽  
Phosphorus Doped

The Influence of a TiN Cap Layer on a Titanium-S Alici de Process: Titanium vs Titanium Nitride/Titanium

1992 ◽  
Vol 260 ◽  
Author(s):  
S. -L. Zhang ◽  
W. Kaplan ◽  
M. Östling ◽  
H. Norström ◽  
A. Lindberg
Keyword(s):  
Contact Resistance ◽  
Titanium Nitride ◽  
Leakage Current ◽  
Annealing Temperature ◽  
Lateral Diffusion ◽  
Specific Contact Resistance ◽  
Silicide Formation ◽  
Cap Layer ◽  
Specific Contact ◽  
Dopant Loss

To minimize the bridging problem In the self-aligned titanium slllcide (SALICI DE) processes, a titanium nitride (TiN) cap has been suggested. The objective of this work was to study the impact of such a TiN cap layer on a Ti-based SALICI DE process. The slllcide formation was carried out by Rapid Thermal Annealing (RTA). The Ti-Si Interaction, the dopant loss during silicide formation, the contact resistance between the formed TiSi2 and SI substrates, the leakage current, and the lateral diffusion of SI atoms over the spacers of MOS devices were investigated with and without a TiN layer on top of Tl films. The dependence of these factors on the annealing temperature was also investigated. The results showed that: a) An increased dopant loss was a direct result of more silicide formation, due to a larger SI substrate consumption. This was observed both with and without TiN cap. b) The specific contact resistance increased with annealing temperature, regardless the TiN cap. c) Sheet resistance, specific contact resistance and leakage current were not sensitive to the selective etch procedure. And d) A lower yield for bridging test structures was found where a TiN cap was employed, Indicating that the TiN layer did not suppress the Si lateral diffusion.

Improvement of the Specific Contact Resistance on P-Type 4H-SiC by Using a Highly P-Typed Doped 4H-SiC Layer Selectively Grown by VLS Transport

2014 ◽  
Vol 806 ◽  
pp. 57-60
Author(s):  
Nicolas Thierry-Jebali ◽  
Arthur Vo-Ha ◽  
Davy Carole ◽  
Mihai Lazar ◽  
Gabriel Ferro ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Ohmic Contacts ◽  
Schottky Barrier Height ◽  
Annealing Temperature ◽  
Process Condition ◽  
Specific Contact Resistance ◽  
High Doping Level ◽  
Annealing Temperatures ◽  
Specific Contact ◽  
P Type

This work reports on the improvement of ohmic contacts made on heavily p-type doped 4H-SiC epitaxial layer selectively grown by Vapor-Liquid-Solid (VLS) transport. Even before any annealing process, the contact is ohmic. This behavior can be explained by the high doping level of the VLS layer (Al concentration > 1020 cm-3) as characterized by SIMS profiling. Upon variation of annealing temperatures, a minimum value of the Specific Contact Resistance (SCR) down to 1.3x10-6 Ω.cm2 has been obtained for both 500 °C and 800 °C annealing temperature. However, a large variation of the SCR was observed for a same process condition. This variation is mainly attributed to a variation of the Schottky Barrier Height.

Current Transport in Ti/Al/Ni/Au Ohmic Contacts to GaN and AlGaN

2007 ◽  
Vol 556-557 ◽  
pp. 1027-1030 ◽  
Author(s):  
Ferdinando Iucolano ◽  
Fabrizio Roccaforte ◽  
Filippo Giannazzo ◽  
A. Alberti ◽  
Vito Raineri
Keyword(s):  
Contact Resistance ◽  
Field Emission ◽  
Ohmic Contacts ◽  
Theoretical Models ◽  
Specific Contact Resistance ◽  
Strong Increase ◽  
Current Transport ◽  
Electrical Characteristics ◽  
Structural And Electrical Properties ◽  
Specific Contact

In this work, the structural and electrical properties of Ti/Al/Ni/Au contacts on n-type Gallium Nitride were studied. An ohmic behaviour was observed after annealing above 700°C. The structural analysis showed the formation of an interfacial TiN layer and different phases in the reacted layer (AlNi, AlAu4, Al2Au) upon annealing. The temperature dependence of the specific contact resistance demonstrated that the current transport occurs through thermoionic field emission in the contacts annealed at 600°C, and field emission after annealing at higher temperatures. By fitting the data with theoretical models, a reduction of the Schottky barrier from 1.21eV after annealing at 600°C to 0.81eV at 800°C was demonstrated, together with a strong increase of the carrier concentration at the interface. The reduction of the contact resistance upon annealing was discussed by correlating the structural and electrical characteristics of the contacts.

Modelling Geometrical Effects of Parasitic and Contact Resistance of FET Devices

1996 ◽  
Vol 427 ◽  
Author(s):  
Geoffrey K. Reeves ◽  
H. Barry Harrison ◽  
Patrick W. Leech
Keyword(s):  
Contact Resistance ◽  
Material Properties ◽  
Ohmic Contacts ◽  
Difficult Problem ◽  
Specific Contact Resistance ◽  
Metal Silicide ◽  
Transmission Line Model ◽  
Specific Contact ◽  
Geometrical Effects ◽  
Contact Parameters

AbstractThe continual trend in decreasing the dimensions of semiconductor devices results in a number of technological problems. One of the more significant of these is the increase in contact resistance, Rc. In order to understand and counteract this increase, Rc needs to be quantitatively modelled as a function of the geometrical and material properties of the contact. However the use of multiple semiconductor layers for ohmic contacts makes the modelling and calculation of Rc a more difficult problem. In this paper, a Tri-Layer Transmission Line Model (TLTLM) is used to analyse a MOSFET ohmic contact and gatedrain region. A quantitative assessment of the influence on Rc of important contact parameters such as the metal-silicide specific contact resistance, the silicide-silicon specific contact resistance and the gate-drain length can thus be made. The paper further describes some of the problems that may be encountered in defining Rc when the dimensions of certain types of contact found in planar devices decrease.

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