Preparation Of Single-Phase Knbo3, Using Bimetallc Alkoxides

1990 ◽  
Vol 180 ◽  
Author(s):  
Mostafa M. Amini ◽  
Michael D. Sacks
Keyword(s):  
Thin Films ◽  
Single Phase ◽  
Methanol Solution ◽  
Multiphase Material ◽  
Niobium Ethoxide ◽  
Bimetallic Alkoxides ◽  
Hydrolysis Of ◽  
Propanol Solution

ABSTRACTSingle-phase KNbO3 was prepared using bimetallic alkoxides. Potassium-niobium ethoxide, KNb(OC2H5)6, and potassium-niobium propoxide, KNb(OC3H7)6, were synthesized and subsequently hydrolyzed using several water concentrations. Potassium-deficient particles were rapidly precipitated when higher water concentrations were used and this resulted in the formation of a multiphase material after calcination. In contrast, single-phase KNbO3 powders could be prepared by two methods: (1) hydrolysis of KNb(OC3H7)6/propanol solutions using 1 mole water (per mole of propoxide) added as a water/propanol solution and (2) hydrolysis of KNb(OC2H5)6,/ethanol solutions using 1 mole of water (per mole of ethoxide) added as a water/methanol solution. The latter method was also used to form thin films of KNbO3.

Chemical Vapor Deposition of Sr1−xBaxNb2O6 Thin Films Using Metal Alkoxide Precursors

2000 ◽  
Vol 15 (8) ◽  
pp. 1702-1708
Author(s):  
Ruichao Zhang ◽  
Ren Xu
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Single Phase ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Thin Layers ◽  
Metal Alkoxide ◽  
Stoichiometry Control ◽  
Alkoxide Precursors

A novel two-step metalorganic chemical vapor deposition process was used in this study to prepare Sr1−xBaxNb2O6 (SBN) thin films. Two thin layers of single-phase SrNb2O6 and BaNb2O6 were deposited alternately on a silicon substrate, and the solid solution of SBN was obtained by high-temperature annealing. The stoichiometry control of the SrNb2O6 and the BaNb2O6 thin films was achieved through deposition process control, according to the evaporation characteristics of double metal alkoxide. The evaporation behavior of double metal alkoxide precursors SrNb2(1-OC4H9)12 and BaNb2(1-OC4H9)12 was studied, and the results were compared with the evaporation of single alkoxide Nb(1-OC4H9)5.

Ferroelectric Properties and Microstructures of Bi4-xDyxTi3O12 Thin Films

2014 ◽  
Vol 633 ◽  
pp. 378-381
Author(s):  
Bei Li ◽  
X.B. Liu ◽  
M. Chen ◽  
X.A. Mei
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Layered Structure ◽  
Remanent Polarization ◽  
Single Phase ◽  
Ferroelectric Properties ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Deposition Technique ◽  
Si Substrates

Dy-doped Bi4Ti3O12 thin films were fabricated on Pt/Ti/SiO2/Si substrates by pulsed laser deposition technique, and the structures and electrical properties of the films were investigated. XRD results indicated that all of Bi4-xDyxTi3O12 films consisted of single phase of a bismuth-layered structure with well-developed rod-like grains. The remanent polarization ( Pr ) and coercive field (Ec) of the Bi4-xDyxTi3O12 Film with x=0.75 were 25μC/cm2 and 85KV/cm , respectively.

Study of Raman Spectrum of Fe Doped CeO2 Thin Films Grown by Pulsed Laser Deposition

2010 ◽  
Vol 123-125 ◽  
pp. 375-378 ◽  
Author(s):  
Ram Prakash ◽  
Shalendra Kumar ◽  
Chan Gyu Lee ◽  
S.K. Sharma ◽  
Marcelo Knobel ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Single Phase ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Fe Doping ◽  
Full Width ◽  
Deposition Technique ◽  
X Ray Diffraction ◽  
X Ray

Ce1-xFexO2 (x=0, 0.01, 0.03 and 0.0 5) thin films were grown by pulsed laser deposition technique on Si and LaAlO3 (LAO) substrates. These films were deposited in vacuum and 200 mTorr oxygen partial pressure for both the substrates. These films were characterized by x-ray diffraction XRD and Raman spectroscopy measurements. XRD results reveal that these films are single phase. Raman results show F2g mode at ~466 cm-1 and defect peak at 489 cm-1 for film that deposited on LAO substrates, full width at half maximum (FWHM) is increasing with Fe doping for films deposited on both the substrates.

scholarly journals Enzymatic Hydrolysis of Polyester Thin Films: Real-Time Analysis of Film Mass Changes and Dissipation Dynamics

2015 ◽  
Vol 50 (1) ◽  
pp. 197-206 ◽  
Author(s):  
Michael Thomas Zumstein ◽  
Hans-Peter E. Kohler ◽  
Kristopher McNeill ◽  
Michael Sander
Keyword(s):  
Thin Films ◽  
Enzymatic Hydrolysis ◽  
Real Time ◽  
Time Analysis ◽  
Real Time Analysis ◽  
Hydrolysis Of

Solution Flow System for Hydrothermal-Electrochemical Synthesis: New Opportunities for Multilayered Oxide Films

1998 ◽  
Vol 517 ◽  
Author(s):  
W. Suchanek ◽  
T. Watanabe ◽  
B. Sakurai ◽  
M. Yoshimura
Keyword(s):  
Thin Films ◽  
Flow Rate ◽  
Electrochemical Synthesis ◽  
Single Phase ◽  
Flow System ◽  
Single Layer ◽  
Double Layers ◽  
Solution Flow ◽  
Additional Control ◽  
Multilayered Thin Films

AbstractA solution flow system for hydrothermal-electrochemical synthesis has been constructed in our laboratory. This equipment can operate at 20°-200°C, under the pressure of 1-50 atm., at flow rate of 1-50 cm3/min. Applicability of the flow system for low-temperature, hydrothermalelectrochemical synthesis of single-layer and multilayered thin films has been demonstrated using the BaTiO3-SrTiO3 system as an example. Single phase thin films as well as double layers have been deposited at 150°C, current density of 1 mA/cm2, and flow rates of 1-50 cm3/min. The flow rate is an important parameter allowing additional control of the films' morphology by affecting the growth rate. The multilayers can be prepared in only one experiment by simply changing the flowing solution. Processing using the solution flow cell may serve as an inexpensive and environmentally friendly way of fabricating any multilayered thin films, including magneto-optic films.

Consolidation of Aluminium Oxynitride Powders Using Hydrolysis of Aluminium Nitride

2014 ◽  
Vol 602-603 ◽  
pp. 170-174 ◽  
Author(s):  
Mirosław M. Bućko ◽  
Jakub Domagała ◽  
Radosław Lach
Keyword(s):  
Thermal Shock Resistance ◽  
Single Phase ◽  
Erosion Resistance ◽  
Aluminum Oxynitride ◽  
Spinel Type ◽  
Shock Resistance ◽  
Aluminium Oxynitride ◽  
Hydrolysis Of ◽  
High Thermal Shock Resistance ◽  
Shs Method

One of the materials with high potential for application as a refractory material is aluminum oxynitride with spinel-type structure, γ-alon. Alon materials, single-phase or composites, are characterized by good mechanical properties, high thermal shock resistance and a high corrosion and erosion resistance. Another advantage is possibility of usage of SHS method for producing of relatively good sinterable powders of γ-alon, however, are characterized by poor compressibility. This paper describes a method of compaction of SHS-derived γ-alon powder using the hydrolysis reaction of aluminum nitride, which is one of the products of SHS synthesis. The green bodies made from the powder with addition of 10 mas.% of water after two weeks of storage reach a strength level up to 30 MPa and an open porosity of less than 30%. Pressureless sintering of the such compacts allows to achieve 95% of theoretical density at 1700°C in less than one minute.

Influence of Excess Potassium on Structural and Ferroelectric Properties of Lead-Free Bi0.5K0.5TiO3 Thin Films

2021 ◽  
Vol 21 (4) ◽  
pp. 2681-2686
Author(s):  
Nguyen Ngoc Minh ◽  
Bui Van Dan ◽  
Nguyen Duc Minh ◽  
Guus Rijnders ◽  
Ngo Duc Quan
Keyword(s):  
Thin Films ◽  
Chemical Solution Deposition ◽  
Single Phase ◽  
Ferroelectric Properties ◽  
Lead Free ◽  
Chemical Solution ◽  
Ferroelectric Films ◽  
Solution Deposition ◽  
Si Substrates ◽  
Excess Amount

Lead-free Bi0.5K0.5TiO3 (BKT) ferroelectric films were synthesized on Pt/Ti/SiO2/Si substrates via the chemical solution deposition. The influence of the excess potassium on the microstructures and the ferroelectric properties of the films was investigated in detail. The results showed that the BKT films have reached the well-crystallized state in the single-phase perovskite structure with 20 mol.% excess amount of potassium. For this film, the ferroelectric properties of the films were significantly enhanced. The remnant polarization (Pr) and maximum polarization (Pm) reached the highest values of 9.4 μC/cm2 and 32.2 μC/cm2, respectively, under the electric field of 400 kV/cm.

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