Processing of SiO2-TiO2 Thin Film Waveguides

1990 ◽  
Vol 180 ◽  
Author(s):  
L. Weisenbach ◽  
T.L. Davis ◽  
B.J.J. Zelinski ◽  
R.L. Roncone ◽  
L.A. weller-Brophy

ABSTRACTThe shrinkage behavior and changes in refractive index of sol-gel derived SiO2 -TiO2 thin films, with a composition of 50 mole %, were investigated. Two regions of shrinkage rate were observed, a rapid initial stage and a slower second stage. The refractive index of the film was found to be dependent upon the heat treatment. Samples prebaked to 100°C and processed at temperatures below 500°C were found to have lower indices than films processed without prebaking. Films heated to 700°C contained small crystallites of anatase uniformly distributed throughout the film.

2021 ◽  
Vol 7 (1) ◽  
pp. 14
Author(s):  
Dewi Suriyani Che Halin ◽  
Kamrosni Abdul Razak ◽  
Mohd Arif Anuar Mohd Salleh ◽  
Mohd Izrul Izwan Ramli ◽  
Mohd Mustafa Al Bakri Abdullah ◽  
...  

Ag/TiO2 thin films were prepared using the sol-gel spin coating method. The microstructural growth behaviors of the prepared Ag/TiO2 thin films were elucidated using real-time synchrotron radiation imaging, its structure was determined using grazing incidence X-ray diffraction (GIXRD), its morphology was imaged using the field emission scanning electron microscopy (FESEM), and its surface topography was examined using the atomic force microscope (AFM) in contact mode. The cubical shape was detected and identified as Ag, while the anatase, TiO2 thin film resembled a porous ring-like structure. It was found that each ring that coalesced and formed channels occurred at a low annealing temperature of 280 °C. The energy dispersive X-ray (EDX) result revealed a small amount of Ag presence in the Ag/TiO2 thin films. From the in-situ synchrotron radiation imaging, it was observed that as the annealing time increased, the growth of Ag/TiO2 also increased in terms of area and the number of junctions. The growth rate of Ag/TiO2 at 600 s was 47.26 µm2/s, and after 1200 s it decreased to 11.50 µm2/s and 11.55 µm2/s at 1800 s. Prolonged annealing will further decrease the growth rate to 5.94 µm2/s, 4.12 µm2/s and 4.86 µm2/s at 2400 s, 3000 s and 3600 s, respectively.


2005 ◽  
Vol 27 (9) ◽  
pp. 1501-1505 ◽  
Author(s):  
Anna Łukowiak ◽  
Rafal Dylewicz ◽  
Sergiusz Patela ◽  
Wieslaw Stręk ◽  
Krzysztof Maruszewski

2015 ◽  
Vol 723 ◽  
pp. 528-531
Author(s):  
Jun Wang ◽  
Ling Yun Bai

TiO2 thin films were prepared on glass substrates by sol-gel method. The effect of withdraw speed on the thickness and optical properties of TiO2 thin films was investigated. The films were transparent in the visible wavelength. The thickness of the TiO2 films was increased from 90 nm for the withdraw speed of 1000 μm/s to 160 nm for the withdraw speed of 2000 μm/s. While, The refractive index of the TiO2 thin film decreased from 2.38 to 2.07. It may be due to the porosity of the film was increased. The optical band-gap of the films was around 3.45 eV.


2015 ◽  
Vol 1109 ◽  
pp. 153-157 ◽  
Author(s):  
A.K.M. Muaz ◽  
U. Hashim ◽  
Sharipah Nadzirah ◽  
M. Wesam Al-Mufti ◽  
Fatimah Ibrahim ◽  
...  

Titanium dioxide (TiO2) thin films were successfully prepared using the use of titanium isopropoxide as a precursor with an ethyl alcohol solution at a molar ratio 1.0:10 by sol-gel precipitation method at room temperature (~24°C). The gel solution was formed after mixed for different times. TiO2thin films were deposited on the P-type <100> silicon substrates by spin coating technique. In this paper, we report the comparison between conductivity and resistivity of TiO2thin films prepared at different heat treatment. The results show that the electrical properties of TiO2thin film were changed with the changes of heat treatment. The results exhibit that the resistance tends to decline as the annealing temperature increases. The most conductive sample is 700°C followed with 500°C, 300°C, 100°C and least conductive is as-deposited film. From the I-V curve, the graph giving a Schottky contact properties.


Author(s):  
Abubakr Mahmoud Hamid ◽  
Hassan Wardi Hassan ◽  
Fatima Ahmed Osman

Solar energy is already has being widely successfully used in residential and industrial setting for thermal and electrical application such as space technology, communication, etc. I. Aims: The aim of this study the effect of the annealing temperature in improvement optical properties of titanium oxide nanostructure doped iron oxide for use in thin film. Study Design: The spray pyrolysis deposition method used for preparation the nanostructure material. Place and Duration of Study: This study was conducted in department of physics and department of materials sciences, Al-Neelain University, between January 2016 and January 2019.  Methodology: Thin films of Titanium Oxide (TiO2) doped Iron Oxide (Fe2O3) have been prepared by chemical spray pyrolysis deposition technique. A laboratory designed glass atomizer was used for spraying the aqueous solution. Which has an output nozzle about 1 mm. then film were deposited on preheated cleaned glass substrates at temperature of 400°C. we used different concentration to study optical parameters. A 1.5 g TiO2 powder of anatase structure doped with 1.5 g of Fe2O3 was mixed with 2 ml of ethanol and stirred using a magnetic stirrer for 30 minutes to form TiO2 paste to obtain the starting solution for deposition and spray time was 10 s and spray interval 2 min was kept constant. The carrier gas (filtered compressed air) was maintained at a pressure of 105 Nm-2, and distance between nozzle and substrate was about 30 cm ± 1 cm. Thickness of sample was measured using the weighting method and was found to be around 400nm. Optical transmittance and absorbance were record in wavelength range of (200-1100) nm using UV-Visible spectrophotometer (Shimadzu Company Japan). Results: The results obtained showed that the optical band gap decreased from 5.6eV before annealing to (3.9, 3.26, 3.24 and 3.27 eV) after annealing temperature at(450° – 500°) for TiO2:Fe2O3 thin films, this result refer to the broadening of  secondary levels that product by TiO2: doping to the Fe2O2thin films. Also the results showed the variation of refractive index with wavelength for different concentration after annealing temperature at (450° – 500°) of TiO2: Fe2O3 films from this figure, it is clear that n decrease with low concentration and increase with high concentration after annealing temperature that mean the density is decreased of this films. In addition the extinction coefficient of TiO2:Fe2O3 thin films recorded before annealing and with different concentration (1.1, 1.2, 1,5 and 1,6) and in the range of (300 – 1200) nm and at annealing temperature from (450° – 500°). It observed from that the extinction coefficient, decrease sharply with the increase of wavelength for all prepared films and all the sample after annealing is interference between them accept the sample before annealing is far from the other sample. Conclusion: The TiO2 thin film shows better result after annealing; By exposing temperature during annealing process degree at (450o- 500o) is found to be the best temperature for annealing TiO2 thin film. The study concluded that an annealing temperature Contributes to the improvement of optical properties related to increasing the efficiency of the solar cell, especially the refractive index, energy gap, extinction coefficient.


2019 ◽  
Vol 2 (2) ◽  
pp. 42
Author(s):  
D. Abayli ◽  
Nilgün Baydogan

ZrO2 thin film samples were produced by the sol-gel dip coating method. Four different absorbed dose levels (such as ~ 0.4, 0.7, 1.2 and 2.7 Gray-Gy) were applied to ZrO2 thin films. Hence, the absorbed dose of ZrO2 thin film was examined as physical dose quantity representing the mean energy imparted to the thin film per unit mass by gamma radiation. Modification of the grain size was performed sensitively by the application of the absorbed dose to the ZrO2 thin film. Therefore the grain size reached from ~50 nm to 87 nm at the irradiated ZrO2 thin film. The relationship of the grain size, the contact angle, and the refractive index of the irradiated ZrO2 thin film was investigated as being an important technical concern. The irradiation process was performed in a hot cell by using a certified solid gamma ray source with 0.018021 Ci as an alternative technique to minimize the utilization of extra toxicological chemical solution. Antireflection and hydrophilic properties of the irradiated ZrO2 thin film were slightly improved by the modification of the grain size. The details on the optical and structural properties of the ZrO2 thin film were examined to obtain the optimum high refractive index, self-cleaning and anti-reflective properties.


2008 ◽  
Vol 368-372 ◽  
pp. 1465-1467
Author(s):  
Chien Jung Huang ◽  
Kuo Chien Liao ◽  
Yan Kuin Su

Titanium dioxide (TiO2) thin film on glass substrate is fabricated by sol-gel method. The TiO2 film is sintered at various temperatures for investigation on the refraction index and crystallization characteristic. The lower refractive index of the TiO2 thin film is 1.89 when the sintering is performed at the low temperature of 200°C and the thickness is 448 nm. However, the higher refractive index of 2.55 and chemical stability of the TiO2 film in rutile phase are obtained via sintering temperature at 700°C.


Materials ◽  
2021 ◽  
Vol 14 (16) ◽  
pp. 4564
Author(s):  
Azliza Azani ◽  
Dewi Suriyani Che Halin ◽  
Kamrosni Abdul Razak ◽  
Mohd Mustafa Al Bakri Abdullah ◽  
Marcin Nabiałek ◽  
...  

Modification has been made to TiO2 thin film to improve the wettability and the absorption of light. The sol-gel spin coating method was successfully used to synthesize GO/TiO2 thin films using a titanium (IV) isopropoxide (TTIP) as a precursor. Different amounts of polyethylene glycol (PEG) (20 to 100 mg) were added into the parent sol solution to improve the optical properties and wettability of the GO/TiO2 thin film. The effect of different amounts of PEG was characterized using X-ray diffraction (XRD) for the phase composition, scanning electron microscopy (SEM) for microstructure observation, atomic force microscopy (AFM) for the surface topography, ultraviolet–visible spectrophotometry (UV-VIS) for the optical properties and wettability of the thin films by measuring the water contact angle. The XRD analysis showed the amorphous phase. The SEM and AFM images revealed that the particles were less agglomerated and surface roughness increases from 1.21 × 102 to 2.63 × 102 nm when the amount of PEG increased. The wettability analysis results show that the water contact angle of the thin film decreased to 27.52° with the increase of PEG to 80 mg which indicated that the thin film has hydrophilic properties. The optical properties also improved significantly, where the light absorbance wavelength became wider and the band gap was reduced from 3.31 to 2.82 eV with the presence of PEG.


Author(s):  
D. Abayli ◽  
Nilgün Baydogan

ZrO2 thin film samples were produced by the sol-gel dip coating method. Four different absorbed dose levels (such as ~ 0.4, 0.7, 1.2 and 2.7 Gray-Gy) were applied to ZrO2 thin films. Hence the absorbed dose of ZrO2 thin film was examined as physical dose quantity representing the mean energy imparted to the thin film per unit mass by gamma radiation. Modification of the grain size was performed sensitively by the application of the absorbed dose to the ZrO2 thin film.Therefore the grain size reached from ~50 nm to 87 nm at the irradiated ZrO2 thin film. The relationship of the grain size, the contact angle, and the refractive index of the irradiated ZrO2 thin film was investigated as being an important technical concern. The irradiation process was performed in a hot cell by using a certified solid gamma ray source with 0.018021 Ci as an alternative technique to minimize the utilization of extra toxicological chemical solution.Antireflection and hydrophilic properties of the irradiated ZrO2 thin film were slightly improved by the modification of the grain size. The details on the optical and structural properties of the ZrO2 thin film were examined to obtain theoptimum high refractive index, self-cleaning and antireflectiveproperties.


1999 ◽  
Vol 14 (6) ◽  
pp. 2369-2372 ◽  
Author(s):  
R. E. Avila ◽  
T. P. Velilla ◽  
P. J. Retuert

PbTiO3 (PT) thin films have been deposited by sol-gel on Pt/Si, SiO2/Si, Pt/Ti/SiO2/Si, and Ti/Pt/Ti/SiO2/Si and annealed for 45 min in the 400–670 °C range. Analysis by x-ray diffraction (XRD) and spectroscopic ellipsometry shows that the Ti overlayer promotes early crystallization in the tetragonal perovskite phase, reducing the presence of a second phase, tentatively identified as pyrochlore, starting by 450 %C. The refractive index and extinction coefficient (n, k) of the PT film increase rapidly with the sintering temperature in the range of 450–570 °C and saturate by 570 °C to values of n varying from 2.4 to 2.9, and k from 0.03 to 0.3, over the 1.65–2.95 eV range. Most of the increase of n is related to thin film densification.


Sign in / Sign up

Export Citation Format

Share Document