Electronic Characterization of Compound Semiconductor Surfaces And Interfaces

1982 ◽  
Vol 18 ◽  
Author(s):  
Winfred MÖnch
Keyword(s):  
Semiconductor Device ◽  
Surface States ◽  
Surfaces And Interfaces ◽  
Semiconductor Contacts ◽  
P Type ◽  
Induced Defects ◽  
Chemical Trends ◽  
Thick Layers ◽  
Device Technology

Metal-semiconductor contacts and semiconductor heterojunctions are wellestablished concepts in semiconductor device technology. The key parameters characterizing such junctions are the barrier height and valence band discontinuity at the interface and the electronic interface states. Clean cleaved GaAs(110) surfaces exhibit no intrinsic surface states in the bulk band gap but do exhibit extrinsic cleavage-induced states. Furthermore, local segregates of arsenic were detected. The chemisorption of metals, semiconductors, hydrogen and oxygen causes depletion layers to form on both n-and p-type crystals. The surface states responsible for these band bendings, which persist even under thick layers of metals and semiconductors, are thought to be related to chemisorption-induced defects. Possible candidates are discussed. Chemical trends are also considered.

Electron Holography of Semiconductor Junctions

1998 ◽  
Vol 4 (S2) ◽  
pp. 642-643
Author(s):  
M. R. McCartney ◽  
Jing Li
Keyword(s):  
Semiconductor Device ◽  
Quantitative Character ◽  
Electron Holography ◽  
Two Dimensional ◽  
Boron Doped ◽  
Strong Candidate ◽  
Voltage Contrast ◽  
P Type ◽  
Imaging Conditions

TEM has not traditionally contributed to characterization of semiconductor junctions, except for some intriguing results by Perovic, Hull and Alvis where highly doped layers gave contrast under very specific sample preparation and imaging conditions. Since electron holography is sensitive to the phase of the electron wavefront that has passed through the sample, it has the potential to provide voltage contrast. In principle, given its inherent two-dimensional and quantitative character, electron holography is a strong candidate for analysis of semiconductor device junctions.The sample for the work reported here was one of a group of test specimens fabricated at IBM for a dopant metrology round-robin comparison to evaluate various profiling methods. The substrate was <100> p-type silicon, boron-doped at 11-25 Ω-cm-1. The test structure was fabricated using low- temperature epitaxial growth and consisted of an abrupt p-n junction, formed by abutting 1020cm-3 doped regions of boron and phosphorus

TEM Sample Fabrication of Sub 22 nm Three-Dimensional Test Structures

2013 ◽  
Author(s):  
James J. Demarest
Keyword(s):  
Sample Preparation ◽  
Semiconductor Device ◽  
Three Dimensional ◽  
Manufacturing Plants ◽  
Transmission Electron ◽  
Device Structures ◽  
Device Integration ◽  
The One ◽  
Device Technology

Abstract With the 14nm technology node becoming a reality at today's state-of-the-art semiconductor manufacturing plants and the 10nm node actively being planned for, device structures have shrunk well beyond the minimum conventional transmission electron microscope (TEM) sample thickness: 50-100nm. This paper addresses the challenges in TEM sample preparation of sub 22nm three-dimensional test structures. As semiconductor device technology continues to shrink and become more complicated with the addition of three-dimensional device integration, unique sample preparation challenges will continue to arise. This opens the door to novel solutions for these problems like the one presented in this paper: an issue that arose where TEM projection effects interfered with proper characterization of a finFET test structure.

TEM characterization of phosphorus-implanted silicon

1991 ◽  
Vol 49 ◽  
pp. 890-891
Author(s):  
N. David Theodore ◽  
Lynnita Knoch ◽  
Jim Christiansen
Keyword(s):  
Cross Section ◽  
Extended Defects ◽  
Leakage Currents ◽  
Tem Analysis ◽  
Transmission Electron ◽  
P Type ◽  
Primary Ions ◽  
Induced Defects ◽  
Made In

Implantation of dopant-species into silicon can result in the formation of amorphous regions, interfaces and extended defects (in the silicon). The presence of these defects can cause modification of dopant distributions, and the rise of leakage currents in p-n junctions. An understanding of the behavior of implant-induced defects and their effect on dopant-distributions is therefore relevant. Such understanding could lead to better defect and dopant control and therefore to more reliable device performance. In this study, a correlation between dopant distributions and damage in implanted silicon, is investigated.The samples investigated were p-type (14-20 Ω-cm) silicon (100) wafers implanted with phosphorous at 180 kev to a dose of 1x1016 cm-2. The implants were performed at room temperature. Post-implant annealing was performed (by rapid-thermal annealing “RTA“) at 800°C for 15 seconds. SIMS (secondaryion mass-spectrometry) and XTEM (cross-section TEM) analysis were performed on as-implanted and annealed samples. Cross-section TEM specimens were made in the 110 geometry. TEM investigation was performed using a JEOL JEM 200CX transmission electron microscope operating at 200 kV. SIMS analysis was performed using an Atomika A-DIDA quadropole instrument with 8 keV O2+ primary ions.

Applications of SIMS to electronic materials and devices

1992 ◽  
Vol 50 (2) ◽  
pp. 1682-1683
Author(s):  
S.F. Corcoran
Keyword(s):  
Depth Distribution ◽  
Secondary Ion Mass Spectrometry ◽  
Semiconductor Device ◽  
Electronic Materials ◽  
Profile Analysis ◽  
Semiconductor Industry ◽  
Small Diameter ◽  
Depth Resolution ◽  
Detection Sensitivity

Over the past decade secondary ion mass spectrometry (SIMS) has played an increasingly important role in the characterization of electronic materials and devices. The ability of SIMS to provide part per million detection sensitivity for most elements while maintaining excellent depth resolution has made this technique indispensable in the semiconductor industry. Today SIMS is used extensively in the characterization of dopant profiles, thin film analysis, and trace analysis in bulk materials. The SIMS technique also lends itself to 2-D and 3-D imaging via either the use of stigmatic ion optics or small diameter primary beams.By far the most common application of SIMS is the determination of the depth distribution of dopants (B, As, P) intentionally introduced into semiconductor materials via ion implantation or epitaxial growth. Such measurements are critical since the dopant concentration and depth distribution can seriously affect the performance of a semiconductor device. In a typical depth profile analysis, keV ion sputtering is used to remove successive layers the sample.

A p-Type PbS Quantum Dot Ink with Improved Stability for Solution Processable Optoelectronics

2021 ◽  
Author(s):  
Fiaz Ahmed ◽  
John Hardin Dunlap ◽  
Perry J. Pellechia ◽  
Andrew Greytak
Keyword(s):  
Quantum Dot ◽  
Ligand Exchange ◽  
Chemical Characterization ◽  
Single Step ◽  
Improved Stability ◽  
Solution Processable ◽  
P Type ◽  
Pbs Quantum Dot

A highly stable p-type PbS-QDs ink is prepared using a single-step biphasic ligand exchange route, overcoming instability encountered in previous reports. Chemical characterization of the ink reveals 3-mercaptopriopionic acid (MPA)...

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