Diffusion of Hydrogen Through Hermetic Carbon Films on Silica Fibers

1989 ◽  
Vol 172 ◽  
Author(s):  
P. J. Lemaire ◽  
K. L. Walker ◽  
K. S. Kranz ◽  
R. G. Huff ◽  
F. V. DiMarcello
Keyword(s):  
Optical Fibers ◽  
Elevated Temperatures ◽  
Optical Loss ◽  
Carbon Films ◽  
Accelerated Tests ◽  
Carbon Coatings ◽  
Silica Fibers ◽  
Defect Sites ◽  
Diffusion Of Hydrogen

AbstractRecent work has made it possible to deposit hermetic carbon coatings on optical fibers during the drawing process. These coatings are used to protect the silica portion of the fiber from undesirable loss increases and strength reductions caused by H2 and H2O, respectively. The hermetic properties of the carbon films have been evaluated using accelerated test conditions where the coated fibers are exposed to H2 at elevated temperatures and hydrogen pressures. In-situ spectral loss monitoring has made it possible to measure changes in the characteristic optical loss features associated with either molecular H2or with species such as OH which form when hydrogen reacts with defects in the silica. By using long lengths of fiber it is thus possible to optically measure the extremely small amounts of hydrogen that penetrate the carbon films during accelerated tests. At temperatures in the range of 100 to 145°C the diffusion of H2 is readily modeled using classical diffusion theories for a composite cylinder, allowing calculation of the diffusion coefficient and the solubility for H2 in the carbon. At higher temperatures the diffusing H2 is partially depleted by reaction with defects in the glass. For these conditions the inward diffusion of the H2 and its reaction at defect sites tend to balance each other, giving rise to a constant, but extremely low, concentration of H2 in the fiber.

Identification of Nanocrystalline Inclusions in Bismuth-Doped Silica Fibers and Preforms

2016 ◽  
Vol 22 (5) ◽  
pp. 987-996 ◽  
Author(s):  
Liudmila D. Iskhakova ◽  
Filipp O. Milovich ◽  
Valery M. Mashinsky ◽  
Alexander S. Zlenko ◽  
Sergey E. Borisovsky ◽  
...  
Keyword(s):  
Optical Fibers ◽  
Room Temperature ◽  
Optical Loss ◽  
Laser Generation ◽  
Dopant Distribution ◽  
X Ray ◽  
The Core ◽  
Silica Fibers ◽  
Transmission Electron ◽  
Bismuth Concentration

AbstractThe nature of nanocrystalline inclusions and dopant distribution in bismuth-doped silicate fibers and preforms are studied by scanning and transmission electron microscopy, and energy and wavelength-dispersive X-ray microanalysis. The core compositions are Bi:SiO2, Bi:Al2O3–SiO2, Bi:GeO2–SiO2, Bi:Al2O3–GeO2–SiO2, and Bi:P2O5–Al2O3–GeO2–SiO2. Nanocrystals of metallic Bi, Bi2O3, SiO2, GeO2, and Bi4(GeO4)3 are observed in these glasses. These inclusions can be the reason for the background optical loss in bismuth-doped optical fibers. The bismuth concentration of 0.0048±0.0006 at% is directly measured in aluminosilicate optical fibers with effective laser generation (slope efficiency of 27% at room temperature).

Deposition of Hermetic Carbon Coatings on Silica Fibers

1989 ◽  
Vol 172 ◽  
Author(s):  
R. G. Huff ◽  
F. V. DiMarcello ◽  
A. C. Hart ◽  
K. L. Walker
Keyword(s):  
Optical Fibers ◽  
Carbon Coating ◽  
Fiber Surface ◽  
Static Fatigue ◽  
Degradation Mechanisms ◽  
Forming Process ◽  
Deposition Rates ◽  
Carbon Coatings ◽  
Silica Fibers ◽  
Carbon Coated

AbstractCarbon coated optical fibers have recently been shown to have excellent resistance to both static fatigue and hydrogen induced losses. The deposition technique used to form the carbon coating strongly affects the coating's ability to resist these degradation mechanisms. The system developed by AT&T utilizes an atmospheric CVD chamber in which a hydrocarbon has is pyrolyzed on the fiber surface. The heat retained in the fiber from the fiber forming process is used to drive the reaction, and high draw speeds are typically used to attain the ˜900°C temperature required to deposit the hermetic form of the carbon coating. Deposition rates of ˜1μm/sec are required to produce the ˜500 Å coating.

Electron and ion irradiation-induced dissolution of mechanical twins in the intermetalic U3Si: An in situ HVEM study

1989 ◽  
Vol 47 ◽  
pp. 652-653
Author(s):  
Charles W. Allen ◽  
Robert C. Birtcher
Keyword(s):  
Elevated Temperatures ◽  
Ion Irradiation ◽  
Ion Beam ◽  
National Laboratory ◽  
Argonne National Laboratory ◽  
Heavy Ion ◽  
High Energy ◽  
Mechanical Twinning ◽  
In Situ Experiments

The uranium silicides, including U3Si, are under study as candidate low enrichment nuclear fuels. Ion beam simulations of the in-reactor behavior of such materials are performed because a similar damage structure can be produced in hours by energetic heavy ions which requires years in actual reactor tests. This contribution treats one aspect of the microstructural behavior of U3Si under high energy electron irradiation and low dose energetic heavy ion irradiation and is based on in situ experiments, performed at the HVEM-Tandem User Facility at Argonne National Laboratory. This Facility interfaces a 2 MV Tandem ion accelerator and a 0.6 MV ion implanter to a 1.2 MeV AEI high voltage electron microscope, which allows a wide variety of in situ ion beam experiments to be performed with simultaneous irradiation and electron microscopy or diffraction.At elevated temperatures, U3Si exhibits the ordered AuCu3 structure. On cooling below 1058 K, the intermetallic transforms, evidently martensitically, to a body-centered tetragonal structure (alternatively, the structure may be described as face-centered tetragonal, which would be fcc except for a 1 pet tetragonal distortion). Mechanical twinning accompanies the transformation; however, diferences between electron diffraction patterns from twinned and non-twinned martensite plates could not be distinguished.

The threshold energy for atom displacement in fcc metals

1990 ◽  
Vol 48 (4) ◽  
pp. 530-531
Author(s):  
Wilfried Sigle ◽  
Matthias Hohenstein ◽  
Alfred Seeger
Keyword(s):  
Growth Rate ◽  
Elevated Temperatures ◽  
Threshold Energy ◽  
Dislocation Loops ◽  
Absolute Minimum ◽  
Voltage Electron ◽  
Atom Displacement ◽  
Electron Microscopes ◽  
Fcc Metal

Prolonged electron irradiation of metals at elevated temperatures usually leads to the formation of large interstitial-type dislocation loops. The growth rate of the loops is proportional to the total cross-section for atom displacement,which is implicitly connected with the threshold energy for atom displacement, Ed . Thus, by measuring the growth rate as a function of the electron energy and the orientation of the specimen with respect to the electron beam, the anisotropy of Ed can be determined rather precisely. We have performed such experiments in situ in high-voltage electron microscopes on Ag and Au at 473K as a function of the orientation and on Au as a function of temperature at several fixed orientations.Whereas in Ag minima of Ed are found close to <100>,<110>, and <210> (13-18eV), (Fig.1) atom displacement in Au requires least energy along <100>(15-19eV) (Fig.2). Au is thus the first fcc metal in which the absolute minimum of the threshold energy has been established not to lie in or close to the <110> direction.

In Situ Polymerized Protic Ionogels for Fuel Cells at Elevated Temperatures

2021 ◽  
Author(s):  
Mengdou Zou ◽  
Jie Luo ◽  
Xurui Wang ◽  
Shuai Tan ◽  
Caihong Wang ◽  
...  
Keyword(s):  
Fuel Cells ◽  
Elevated Temperatures

scholarly journals Ultraviolet Absorption Cross-Sections of Ammonia at Elevated Temperatures for Nonintrusive Quantitative Detection in Combustion Environments

2021 ◽  
pp. 000370282199044
Author(s):  
Wubin Weng ◽  
Shen Li ◽  
Marcus Aldén ◽  
Zhongshan Li
Keyword(s):  
Cross Section ◽  
Cross Sections ◽  
Absorption Cross Section ◽  
Elevated Temperatures ◽  
Uv Absorption ◽  
Energy Utilization ◽  
Quantitative Detection ◽  
Absorption Cross ◽  
Hot Gas

Ammonia (NH3) is regarded as an important nitrogen oxides (NOx) precursor and also as an effective reductant for NOx removal in energy utilization through combustion, and it has recently become an attractive non-carbon alternative fuel. To have a better understanding of thermochemical properties of NH3, accurate in situ detection of NH3 in high temperature environments is desirable. Ultraviolet (UV) absorption spectroscopy is a feasible technique. To achieve quantitative measurements, spectrally resolved UV absorption cross-sections of NH3 in hot gas environments at different temperatures from 295 K to 590 K were experimentally measured for the first time. Based on the experimental results, vibrational constants of NH3 were determined and used for the calculation of the absorption cross-section of NH3 at high temperatures above 590 K using the PGOPHER software. The investigated UV spectra covered the range of wavelengths from 190 nm to 230 nm, where spectral structures of the [Formula: see text] transition of NH3 in the umbrella bending mode, v2, were recognized. The absorption cross-section was found to decrease at higher temperatures. For example, the absorption cross-section peak of the (6, 0) vibrational band of NH3 decreases from ∼2 × 10−17 to ∼0.5 × 10−17 cm2/molecule with the increase of temperature from 295 K to 1570 K. Using the obtained absorption cross-section, in situ nonintrusive quantification of NH3 in different hot gas environments was achieved with a detection limit varying from below 10 parts per million (ppm) to around 200 ppm as temperature increased from 295 K to 1570 K. The quantitative measurement was applied to an experimental investigation of NH3 combustion process. The concentrations of NH3 and nitric oxide (NO) in the post flame zone of NH3–methane (CH4)–air premixed flames at different equivalence ratios were measured.

scholarly journals Thermal stability and diffusion characteristics of ultrathin amorphous carbon films grown on crystalline and nitrogenated silicon substrates by filtered cathodic vacuum arc deposition

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Shengxi Wang ◽  
Anurag Roy ◽  
Kyriakos Komvopoulos
Keyword(s):  
Thermal Stability ◽  
Amorphous Carbon ◽  
Silicon Substrate ◽  
Elevated Temperatures ◽  
Carbon Films ◽  
Vacuum Arc ◽  
Cross Sectional ◽  
Prolonged Heating ◽  
Filtered Cathodic Vacuum Arc ◽  
Thermal Stability Of

AbstractAmorphous carbon (a-C) films are widely used as protective overcoats in many technology sectors, principally due to their excellent thermophysical properties and chemical inertness. The growth and thermal stability of sub-5-nm-thick a-C films synthesized by filtered cathodic vacuum arc on pure (crystalline) and nitrogenated (amorphous) silicon substrate surfaces were investigated in this study. Samples of a-C/Si and a-C/SiNx/Si stacks were thermally annealed for various durations and subsequently characterized by high-resolution transmission electron microscopy (TEM) and electron energy loss spectroscopy (EELS). The TEM images confirmed the continuity and uniformity of the a-C films and the 5-nm-thick SiNx underlayer formed by silicon nitrogenation using radio-frequency sputtering. The EELS analysis of cross-sectional samples revealed the thermal stability of the a-C films and the efficacy of the SiNx underlayer to prevent carbon migration into the silicon substrate, even after prolonged heating. The obtained results provide insight into the important attributes of an underlayer in heated multilayered media for preventing elemental intermixing with the substrate, while preserving the structural stability of the a-C film at the stack surface. An important contribution of this investigation is the establishment of an experimental framework for accurately assessing the thermal stability and elemental diffusion in layered microstructures exposed to elevated temperatures.

In-Situ Characterization of Growth and Intermixing at a Heteroepitaxial Interface: Fe on Au(001)

1993 ◽  
Vol 318 ◽  
Author(s):  
Q. Jiang ◽  
A. Chan ◽  
Y.-L. He ◽  
G.-C. Wang
Keyword(s):  
Elevated Temperatures ◽  
Chemical Elements ◽  
Background Intensity ◽  
In Situ Characterization ◽  
Initial Stage ◽  
Monolayer Growth ◽  
Low Energy Electron ◽  
Energy Dependent

ABSTRACTThe growth and chemical intermixing of submonolayer and a few monolayer thick Fe films on a Au(001) surface was studied by High Resolution Low Energy Electron Diffraction (HRLEED) technique. Through the analysis of the energy dependent angular profiles as a function of time, we obtained the distribution of islands and distribution of spacings during submonolayer growth. The interference of electron waves from different chemical elements in terraces at different heights in the surface contributes to the background intensity and broadening in the angular profiles of diffraction beams. A subsurface Fe capped by Au islands as a result of atomic place exchange was observed at the initial stage of monolayer growth. From the energy dependent angular profiles as a function of temperature, we determine the quantitative change of inhomogeneity length (∼20 Å) at the interface of ultrathin films at elevated temperatures due to intermixing.

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