Silica-Based Single-Mode Waveguides and Their Applications to Integrated-Optic Devices

1989 ◽  
Vol 172 ◽  
Author(s):  
Norio Takato ◽  
Akio Sugita
Keyword(s):  
Optical Switching ◽  
Phase Shifter ◽  
Single Mode ◽  
Low Loss ◽  
Si Substrates ◽  
Thermal Expansion Coefficients ◽  
Integrated Optic Devices ◽  
Polarization Insensitive ◽  
The Difference ◽  
Flame Hydrolysis Deposition

AbstractLow-loss silica-based single-mode waveguides are fabricated on Si substrates by flame hydrolysis deposition and reactive ion etching. The waveguide loaded with a thin film heater operates as a phase shifter due to the refractive index dependence on temperature. The phase shifter can afford optical switching and/or tuning functions for silica-based integrated-optic devices. The waveguides have large stress-induced birefringence due to the difference in thermal expansion coefficients between SiO2 and Si. Waveguide birefringence control techniques are proposed for constructing various polarization insensitive and sensitive devices.

2-d taper for low-loss coupling between polarization-insensitive microwaveguides and single-mode optical fibers

2003 ◽  
Vol 21 (10) ◽  
pp. 2429-2433 ◽  
Author(s):  
L. Vivien ◽  
S. Laval ◽  
E. Cassan ◽  
X. Le Roux ◽  
D. Pascal
Keyword(s):  
Optical Fibers ◽  
Single Mode ◽  
Low Loss ◽  
Polarization Insensitive

Defects in β-SiC thin films grown on α-SiC substrates

1988 ◽  
Vol 46 ◽  
pp. 568-569
Author(s):  
Karren L. More
Keyword(s):  
Thin Films ◽  
Semiconductor Device ◽  
Lattice Mismatch ◽  
Chemical Vapor ◽  
Substrate Material ◽  
Growth Interface ◽  
Si Substrates ◽  
Thermal Expansion Coefficients ◽  
Device Applications ◽  
Expansion Coefficients

Beta-SiC is an ideal candidate material for use in semiconductor device applications. Currently, monocrystalline β-SiC thin films are epitaxially grown on {100} Si substrates by chemical vapor deposition (CVD). These films, however, contain a high density of defects such as stacking faults, microtwins, and antiphase boundaries (APBs) as a result of the 20% lattice mismatch across the growth interface and an 8% difference in thermal expansion coefficients between Si and SiC. An ideal substrate material for the growth of β-SiC is α-SiC. Unfortunately, high purity, bulk α-SiC single crystals are very difficult to grow. The major source of SiC suitable for use as a substrate material is the random growth of {0001} 6H α-SiC crystals in an Acheson furnace used to make SiC grit for abrasive applications. To prepare clean, atomically smooth surfaces, the substrates are oxidized at 1473 K in flowing 02 for 1.5 h which removes ∽50 nm of the as-grown surface. The natural {0001} surface can terminate as either a Si (0001) layer or as a C (0001) layer.

1.5 m optical transmission experiments using very low-loss single-mode fibres

1979 ◽  
Vol 15 (8) ◽  
pp. 219 ◽  
Author(s):  
Susumu Machida ◽  
Yamada Jun-Ichi ◽  
Takaaki Mukai ◽  
Yoshiji Horikoshi ◽  
Haruhiko Tsuchiya ◽  
...  
Keyword(s):  
Optical Transmission ◽  
Single Mode ◽  
Low Loss

Influence of Magnetoelastic Anisotropy on Properties of Nanostructured Microwires

2013 ◽  
Vol 646 ◽  
pp. 59-66 ◽  
Author(s):  
Arcady Zhukov ◽  
Margarita Churyukanova ◽  
Lorena Gonzalez-Legarreta ◽  
Ahmed Talaat ◽  
Valentina Zhukova ◽  
...  
Keyword(s):  
Heat Capacity ◽  
Hysteresis Loops ◽  
Magnetic Behaviour ◽  
Soft Magnetic ◽  
Magnetoelastic Anisotropy ◽  
Thermal Expansion Coefficients ◽  
Magnetoelastic Energy ◽  
Expansion Coefficients ◽  
The Difference ◽  
Magneto Resistance

We studied the effect ofthe magnetoelastic ansitropy on properties of nanostructured glass-coated microwires with soft magnetic behaviour (Finemet-type microwires of Fe70.8Cu1Nb3.1Si14.5B10.6, Fe71.8Cu1Nb3.1Si15B9.1 and Fe73.8Cu1Nb3.1Si13B9.1 compositions) and with granular structure (Cu based Co-Cu microwires). The magnetoelastic energy originated from the difference in thermal expansion coefficients of the glass and metallic alloy during the microwires fabrication, affected the hysteresis loops, coercivity and heat capacity of Finemet-type microwires. Hysteresis loops of all as-prepared microwires showed rectangular shape, typical for Fe-rich microwires. As expected, coercivity, HC, of as-prepared microwires increases with decreasing of the ratio ρ defined as the ratio between the metallic nucleus diameter, d to total microwire diameter, D. On the other hand we observed change of heat capacity in microwires with different ratio ρ. In the case of Co-Cu microwires ρ- ratio affected the structure and the giant magneto-resistance of obtained microwires.

Ultimate low-loss single-mode fibre at 1.55 μm

1979 ◽  
Vol 15 (4) ◽  
pp. 106 ◽  
Author(s):  
T. Miya ◽  
Y. Terunuma ◽  
T. Hosaka ◽  
T. Miyashita
Keyword(s):  
Single Mode ◽  
Low Loss ◽  
Single Mode Fibre ◽  
Mode Fibre
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