Crystallization Studies of Glassy Te-Se-Br Thin Films

1989 ◽  
Vol 172 ◽  
Author(s):  
J. L. Adam ◽  
C. Ortiz ◽  
J. R. Salem ◽  
X. H. Zhang
Keyword(s):  
Thin Films ◽  
Heat Flow ◽  
Laser Power ◽  
Network Formation ◽  
Laser Energy ◽  
Pulse Length ◽  
Three Dimensional ◽  
Complete Loss ◽  
Fractal Network ◽  
Laser Pulse Length

AbstractWe have studied the effect of laser irradiation on Te-Se-Br thin films. The major effects were found to be dominated by changes in composition because of the complete loss of Br and variable loss of Se. These losses are measured by EIDS and are reasonable in view of the temperatures obtained from a heat flow calculation. The remaining Te-Se material can be made crystalline under specific conditions of laser pulse length and laser power (which determine the cooling rate). We have been able to establish that the crystallization starts with surface filamentary growth exhibiting fractal network formation. With higher laser energy it tends to coalesce to form three dimensional crystals.

Laser Pulse Triggering of the Explosive Crystallization in Amorphous Si and Ge Thin Films

1989 ◽  
Vol 157 ◽  
Author(s):  
W. Marine ◽  
J. Marfaing
Keyword(s):  
Thin Films ◽  
Melting Point ◽  
Laser Pulse ◽  
Pulse Length ◽  
Electronic Microscopy ◽  
Explosive Crystallization ◽  
Amorphous Si ◽  
Laser Pulse Length ◽  
Electronic Microscope

ABSTRACTThe structure and morphologies of the thin amorphous a-Si and oc-Ge films crystallized “in situ” in an electronic microscope by pulsed YAG laser have been studied using conventional and high-resolution transmission electronic microscopy observations. It is found that the laser induced nucleation rate (I) is laser pulse length dependent. I is about 1021-1022 cm−3 s−1 (α-Si) and 1023-1025 cm−3 s−1 (α-Ge) near the melting point. Explosive dendritic formation is the result of competition between solid state light induced nucleation and melting mediated explosive growth.

Metastable Phase Formation in Laser Processed Al-Ge Thin Films

1986 ◽  
Vol 74 ◽  
Author(s):  
F. Catalina ◽  
C. N. Afonso ◽  
C. Ortiz
Keyword(s):  
Thin Films ◽  
Laser Pulse ◽  
Comparative Study ◽  
Laser Irradiation ◽  
Eutectic Composition ◽  
Metastable Phase ◽  
Pulse Length ◽  
Free Standing ◽  
Metastable Phase Formation ◽  
Laser Pulse Length

AbstractThis paper presents a comparative study of the microstructures formed in Al.59Ge.41and Al.70Ge.30 (eutectic composition) free standing films under laser irradiation. An hexagonal metastable phase located between Allamella, can be formed depending on the film composition and the laser pulse length.

scholarly journals Acoustic Cell Patterning in Hydrogel for Three-Dimensional Cell Network Formation

Micromachines ◽  
2020 ◽  
Vol 12 (1) ◽  
pp. 3
Author(s):  
Kyo-in Koo ◽  
Andreas Lenshof ◽  
Le Thi Huong ◽  
Thomas Laurell
Keyword(s):  
Network Formation ◽  
Umbilical Vein ◽  
Three Dimensional ◽  
Extrusion Process ◽  
Fibroblast Cells ◽  
Glass Capillary ◽  
Cell Network ◽  
Significant Difference ◽  
The One ◽  
Umbilical Vein Endothelial Cells

In the field of engineered organ and drug development, three-dimensional network-structured tissue has been a long-sought goal. This paper presents a direct hydrogel extrusion process exposed to an ultrasound standing wave that aligns fibroblast cells to form a network structure. The frequency-shifted (2 MHz to 4 MHz) ultrasound actuation of a 400-micrometer square-shaped glass capillary that was continuously perfused by fibroblast cells suspended in sodium alginate generated a hydrogel string, with the fibroblasts aligned in single or quadruple streams. In the transition from the one-cell stream to the four-cell streams, the aligned fibroblast cells were continuously interconnected in the form of a branch and a junction. The ultrasound-exposed fibroblast cells displayed over 95% viability up to day 10 in culture medium without any significant difference from the unexposed fibroblast cells. This acoustofluidic method will be further applied to create a vascularized network by replacing fibroblast cells with human umbilical vein endothelial cells.

scholarly journals Modeling of three-dimensional exciplex pumped fluid Cs vapor laser with transverse and longitudinal gas flow

2021 ◽  
Vol 9 ◽  
Author(s):  
Chenyi Su ◽  
Xingqi Xu ◽  
Jinghua Huang ◽  
Bailiang Pan
Keyword(s):  
Wall Temperature ◽  
Laser Power ◽  
Gas Flow ◽  
Particle Density ◽  
Fluid Velocity ◽  
Three Dimensional ◽  
Heat Accumulation ◽  
Vapor Laser ◽  
Output Laser Power ◽  
Output Laser

Abstract Considering the thermodynamical fluid mechanics in the gain medium and laser kinetic processes, a three-dimensional theoretical model of an exciplex-pumped Cs vapor laser with longitudinal and transverse gas flow is established. The slope efficiency of laser calculated by the model shows good agreement with the experimental data. The comprehensive three-dimensional distribution of temperature and particle density of Cs is depicted. The influence of pump intensity, wall temperature, and fluid velocity on the laser output performance is also simulated and analyzed in detail, suggesting that a higher wall temperature can guarantee a higher output laser power while causing a more significant heat accumulation in the cell. Compared with longitudinal gas flow, the transverse flow can improve the output laser power by effectively removing the generated heat accumulation and alleviating the temperature gradient in the cell.

scholarly journals Nanometer-Thick [(FPEA)2PbX4; X=I, Br] 2D Halide Perovskite Based Thin Films for Pollutant Detection and Nonconventional Photocatalytic Degradation

2021 ◽  
Author(s):  
Arindam Mondal ◽  
Akash Lata ◽  
Aarya Prabhakaran ◽  
Satyajit Gupta
Keyword(s):  
Thin Films ◽  
Photocatalytic Degradation ◽  
Three Dimensional ◽  
Two Dimensional ◽  
Reduced Dimensionality ◽  
P Application ◽  
Halide Perovskites ◽  
Halide Perovskite ◽  
Pollutant Detection

Application of three-dimensional (3D)-halide perovskites (HaP) in photocatalysis encourages the new exercise with two-dimensional (2D) HaP based thin-films for photocatalytic degradation of dye. The reduced dimensionality to 2D-HaPs, with a...

scholarly journals Preparation and Properties of Superconducting thin Films by Excimer Laser Ablation

1990 ◽  
Vol 191 ◽  
Author(s):  
Michael E. Geusic ◽  
Alan F. Stewart ◽  
Larry R. Pederson ◽  
William J. Weber ◽  
Kenneth R. Marken ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Excimer Laser ◽  
Laser Energy ◽  
Substrate Surface ◽  
Xrd Analysis ◽  
Zero Field ◽  
Superconducting Transition ◽  
X Ray Diffraction ◽  
Excimer Laser Ablation

ABSTRACTExcimer laser ablation with an in situ heat treatment was used to prepare high quality superconducting YBa2Cu3O7−x thin films on (100)-SrTiO3 and (100)-LaAlO3 substrates. A pulsed excimer laser (XeCl; 308 nm) was used to ablate a rotating, bulk YBa2Cu3O7−x target at a laser energy density of 2–3 J/cm2. Based on four-probe dc resistance measurements, the films exhibited superconducting transition temperatures (Tc, midpoint) of 88 and 87K with 2K (90–10%) transition widths for SrTiO3 and LaAlO3, respectively. Transport critical current densities (Jc) measured at 77K were 2 × 106 and 1 × 106 A/cm2 in zero field for SrTiO3 and LaAlO3, respectively. X-ray diffraction (XRD) analysis showed the films to be highly oriented, with the c-axis perpendicular to the substrate surface.

Epitaxial Growth of AlN Thin Films on Silicon and Sapphire by Pulsed Laser Deposition

1995 ◽  
Vol 395 ◽  
Author(s):  
R.D. Vispute ◽  
H. Wu ◽  
K. Jagannadham ◽  
J. Narayan
Keyword(s):  
Thin Films ◽  
Electrical Resistivity ◽  
Pulsed Laser Deposition ◽  
Laser Energy ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Breakdown Field ◽  
Transmission Electron ◽  
Uv Visible ◽  
Relationship Of

ABSTRACTAIN thin films have been grown epitaxially on Si(111) and Al2O3(0001) substrates by pulsed laser deposition. These films were characterized by FTIR and UV-Visible, x-ray diffraction, high resolution transmission electron and scanning electron microscopy, and electrical resistivity. The films deposited on silicon and sapphire at 750-800°C and laser energy density of ∼ 2 to 3J/cm2 are epitaxial with an orientational relationship of AIN[0001]║ Si[111], AIN[2 110]║Si[011] and AlN[0001]║Al2O3[0001], AIN[1 2 1 0]║ Al2O3[0110] and AIN[1010] ║ Al2O3[2110]. The both AIN/Si and AIN/Al2O3 interfaces were found to be quite sharp without any indication of interfacial reactions. The absorption edge measured by UV-Visible spectroscopy for the epitaxial AIN film grown on sapphire was sharp and the band gap was found to be 6.1eV. The electrical resistivity of the films was about 5-6×l013Ω-cm with a breakdown field of 5×106V/cm. We also found that the films deposited at higher laser energy densities ≥10J/cm2 and lower temperatures ≤650°C were nitrogen deficient and containing free metallic aluminum which degrade the microstructural, electrical and optical properties of the AIN films

Microstructure Evolution of Epitaxial (Ba, Sr) TiO3/ (001) HgO Thin Films

1994 ◽  
Vol 361 ◽  
Author(s):  
V.A. Alyoshin ◽  
E.V. Sviridov ◽  
V.I.M. Hukhortov ◽  
I.H. Zakharchenko ◽  
V.P. Dudkevich
Keyword(s):  
Thin Films ◽  
Cross Section ◽  
Microstructure Evolution ◽  
Three Dimensional ◽  
Gas Pressure ◽  
Smooth Surfaces ◽  
Two Dimensional ◽  
Surface Versus ◽  
Deposition Conditions

ABSTRACTSurface and cross-section relief evolution of ferroelectric epitaxial (Ba,Sr)TiO3 films rf-sputtered on (001) HgO crystal cle-avage surface versus the oxygen worKing gas pressure P and subst-rate temperature T were studied. Specific features of both three-dimensional and two-dimensional epitaxy mechanisms corresponding to various deposition conditions were revealed. Difference between low and high P-T-value 3D epitaxy was established. The deposition of films with mirror-smooth surfaces and perfect interfaces is shown to be possible.

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