Characterization of Interfaces in SiC Particulate-Reinforced Al Alloys by AEM

1989 ◽  
Vol 170 ◽  
Author(s):  
Brian W. Robertson ◽  
Chandra Holm ◽  
Yang-Pi Lin ◽  
Stephen F. J. Corbin ◽  
David S. Wilkinson
Keyword(s):  
Sample Preparation ◽  
Silicon Content ◽  
Al Alloys ◽  
Preliminary Step ◽  
Transmission Electron ◽  
Electron Microscopes ◽  
Particulate Reinforced

AbstractAs a preliminary step to detailed study of the interfaces in SiC particulatereinforced Al alloys, a number of methods of sample preparation have been explored; the resultant artefacts on the thinned foils observed in transmission electron microscopes are discussed and improvements to the preparation procedures are suggested. Initial observations of the microstructure of two alloys differing significantly in their matrix silicon content are presented.

Comparison of ultra high resolution immersion lens CFESEM and TEM for imaging of semiconductor devices

1990 ◽  
Vol 48 (4) ◽  
pp. 622-623
Author(s):  
Terrence Reilly ◽  
Al Pelillo ◽  
Barbara Miner
Keyword(s):  
High Resolution ◽  
Sample Preparation ◽  
Cross Sections ◽  
Semiconductor Devices ◽  
Ion Milling ◽  
Observation Area ◽  
Transmission Electron ◽  
Milling Machines ◽  
Resolution Imaging ◽  
Electron Microscopes

The use of transmission electron microscopes (TEM) has proven to be very valuable in the observation of semiconductor devices. The need for high resolution imaging becomes more important as the devices become smaller and more complex. However, the sample preparation for TEM observation of semiconductor devices have generally proven to be complex and time consuming. The use of ion milling machines usually require a certain degree of expertise and allow a very limited viewing area. Recently, the use of an ultra high resolution "immersion lens" cold cathode field emission scanning electron microscope (CFESEM) has proven to be very useful in the observation of semiconductor devices. Particularly at low accelerating voltages where compositional contrast is increased. The Hitachi S-900 has provided comparable resolution to a 300kV TEM on semiconductor cross sections. Using the CFESEM to supplement work currently being done with high voltage TEMs provides many advantages: sample preparation time is greatly reduced and the observation area has also been increased to 7mm. The larger viewing area provides the operator a much greater area to search for a particular feature of interest. More samples can be imaged on the CFESEM, leaving the TEM for analyses requiring diffraction work and/or detecting the nature of the crystallinity.

Applications of In-situ Sample Preparation and Modeling of SEM-STEM Imaging

2008 ◽  
Author(s):  
R.J. Young ◽  
A. Buxbaum ◽  
B. Peterson ◽  
R. Schampers
Keyword(s):  
Sample Preparation ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Dual Beam ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Electron Microscopes ◽  
Scanning Electron Microscopes ◽  
Preparation Techniques

Abstract Scanning transmission electron microscopy with scanning electron microscopes (SEM-STEM) has become increasing used in both SEM and dual-beam focused ion beam (FIB)-SEM systems. This paper describes modeling undertaken to simulate the contrast seen in such images. Such modeling provides the ability to help understand and optimize imaging conditions and also support improved sample preparation techniques.

Selective growth and characterization of nanostructures with transmission electron microscopes

2005 ◽  
Vol 241 (1-2) ◽  
pp. 56-60 ◽  
Author(s):  
M. Shimojo ◽  
S. Bysakh ◽  
K. Mitsuishi ◽  
M. Tanaka ◽  
M. Song ◽  
...  
Keyword(s):  
Selective Growth ◽  
Transmission Electron ◽  
Electron Microscopes

An Environmental Transmission Electron Microscope for in situ Synthesis and Characterization of Nanomaterials

2005 ◽  
Vol 20 (7) ◽  
pp. 1695-1707 ◽  
Author(s):  
Renu Sharma
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Elevated Temperatures ◽  
Dark Field ◽  
In Situ Synthesis ◽  
Synthesis And Characterization ◽  
Transmission Electron ◽  
Electron Microscopes

The world of nanomaterials has become the real world for most applications in the area of nanotechnology. As postsynthesis handling of materials at the nanoscale level is impractical, nanomaterials must be synthesized directly as part of a device or circuit. The demands of nanotechnology have led to modifications in the design of transmission electron microscopes (TEMs) that enable in situ synthesis and characterization simultaneously. The environmental TEM (ETEM) is one such modified instrument that has often been used to follow gas–solid and/or liquid–solid interactions at elevated temperatures. Although the history and development of the ETEM, also called the controlled atmosphere or environmental cell TEM, is as old as transmission electron microscopy itself, developments in the design of medium-voltage TEMs have succeeded in bringing resolutions down to the subnanometer level. A modern ETEM equipped with a field-emission gun, energy filter or electron energy-loss spectrometer, scanning transmission electron microscopy coils, and bright-field and dark-field detectors can be a versatile tool for understanding chemical processes at the nanometer level. This article reviews the design and operations of a dedicated ETEM. Its applications range from the in situ characterization of reaction steps, such as oxidation-reduction and hydroxylation, to the in situ synthesis of nanomaterials, such as quantum dots and carbon nanotubes. Some examples of the current and the future applications for the synthesis and characterization of nanomaterials are also discussed.

scholarly journals Characterization of Heterogeneous Catalysts in Different Environmental Transmission Electron Microscopes at 80kV to 1MV Accelerating Voltage

2011 ◽  
Vol 17 (S2) ◽  
pp. 1706-1707
Author(s):  
K Yoshida ◽  
A Carlsson ◽  
J Jinschek ◽  
D Stokes ◽  
P Gai ◽  
...  
Keyword(s):  
Heterogeneous Catalysts ◽  
Environmental Transmission ◽  
Transmission Electron ◽  
Electron Microscopes

Extended abstract of a paper presented at Microscopy and Microanalysis 2011 in Nashville, Tennessee, USA, August 7–August 11, 2011.

High-Resolution TEM and the Application of Direct and Indirect Aberration Correction

2008 ◽  
Vol 14 (1) ◽  
pp. 60-67 ◽  
Author(s):  
Crispin J.D. Hetherington ◽  
Lan-Yun Shery Chang ◽  
Sarah Haigh ◽  
Peter D. Nellist ◽  
Lionel Cervera Gontard ◽  
...  
Keyword(s):  
Substantial Improvement ◽  
Confocal Imaging ◽  
Aberration Correction ◽  
Indirect Methods ◽  
Transmission Electron ◽  
High Resolution Tem ◽  
Imaging Mode ◽  
Electron Microscopes ◽  
Direct And Indirect Methods

Aberration correction leads to a substantial improvement in the directly interpretable resolution of transmission electron microscopes. Correction of the aberrations has been achieved electron-optically through a hexapole-based corrector and also indirectly by computational analysis of a focal or tilt series of images. These direct and indirect methods are complementary, and a combination of the two offers further advantages. Materials characterization has benefitted from the reduced delocalization and higher resolution in the corrected images. It is now possible, for example, to locate atomic columns at surfaces to higher accuracy and reliability. This article describes the JEM-2200FS in Oxford, which is equipped with correctors for both the image-forming and probe-forming lenses. Examples of the use of this instrument in the characterization of nanocrystalline catalysts are given together with initial results combining direct and indirect methods. The double corrector configuration enables direct imaging of the corrected probe, and a potential confocal imaging mode is described. Finally, modifications to a second generation instrument are outlined.

TEM sample preparation and analysis of single-crystalline Si spheres

1994 ◽  
Vol 52 ◽  
pp. 876-877
Author(s):  
Kim M. Jones
Keyword(s):  
Solar Cell ◽  
Sample Preparation ◽  
Spherical Shape ◽  
Tem Analysis ◽  
Thin Sections ◽  
Transmission Electron ◽  
Sample Preparation Procedure ◽  
Refinement Process ◽  
Main Components

In parallel with the technological advancements in the field of Transmission Electron Microscopy (TEM), numerous innovations in TEM sample preparation have also transpired. Innovations in polishing techniques, ion etching, and ultramicrotomy have not only expanded the types of materials that are being investigated with TEM, but have also improved the quality of the thin sections that are examined. Described in this paper is a sample preparation procedure that was developed in order to prepare small Si spheres for TEM analysis. Metallurgical-grade Si is the starting material used in the productionof the spheres. The Si spheres are the main components in the Spheral Solar Cell technology developed by Texas Instruments. The solar cell configuration is shown schematically in Fig. 1. The spheresaresubjected to a number of refinement steps, for example: denuding, gettering, and annealing in order to achieve a purity that is suitable for solar cell fabrication. TEM characterization of the Si spheres was performed at various stages in the refinement process. The spherical shape and size (ave. dia.=0.75 mm) of the Si pose a challenge for TEM sample preparation.

Visualisation of Electrically Active Areas Using Electron Holography

2002 ◽  
Author(s):  
U. Muehle ◽  
A. Lenk ◽  
M. Lehmann ◽  
H. Lichte
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Sample Preparation ◽  
Electron Holography ◽  
Transmission Electron ◽  
Structural Details ◽  
Different Types ◽  
High Level ◽  
Technical Solutions

Abstract In accordance with the predictions of the International Semiconductor Association, a further decrease in the structural widths of semiconductor devices is expected. For an in-depth characterization of actual structural details, the transmission electron microscopy (TEM)-technique is becoming more and more significant. An urgent requirement is in the visualization of dimensions of the doped regions and estimation of p-n-junctions profile with a high level spatial resolution. The off-axis electron holography, a special TEM-technique, is able to visualize electrically active areas in semiconductors. This article describes a way to achieve sample preparation for TEM-holography from actual memory products and also provides an idea of the potential of this technique for semiconductor failure analysis. It shows that different types and sizes of FET's and testing structures could be visualized by focusing on the physical basics, technical solutions, and sample preparation.

Sign in / Sign up

Export Citation Format

Share Document