Considerations Limiting Zero-Resistance Currents in High-Temperature Superconductors

1989 ◽  
Vol 169 ◽  
Author(s):  
M. Tinkham
Keyword(s):  
High Temperature ◽  
High Temperature Superconductors ◽  
Melting Transition ◽  
Thermally Activated ◽  
Flux Motion ◽  
Flux Lattice ◽  
Zero Resistance

AbstractThe fundamental processes governing the appearance of dissipation due to flux motion in superconductors are reviewed. The dominant thermally‐activated resistive processes are discussed, and evidence for a sharp melting transition of the flux lattice is assessed.

Thermally Activated Flux Motion in 2223 Phase High Temperature Superconductors

1992 ◽  
Vol 9 (4) ◽  
pp. 206-208 ◽  
Author(s):  
Chen Jun ◽  
Li Gang ◽  
Li Chuanyi ◽  
Feng Qingrong ◽  
Zhang Han ◽  
...  
Keyword(s):  
High Temperature ◽  
High Temperature Superconductors ◽  
Thermally Activated ◽  
Flux Motion ◽  
Activated Flux

scholarly journals Critical currents and thermally activated flux motion in high‐temperature superconductors

1989 ◽  
Vol 54 (8) ◽  
pp. 763-765 ◽  
Author(s):  
T. T. M. Palstra ◽  
B. Batlogg ◽  
R. B. van Dover ◽  
L. F. Schneemeyer ◽  
J. V. Waszczak
Keyword(s):  
High Temperature ◽  
High Temperature Superconductors ◽  
Critical Currents ◽  
Thermally Activated ◽  
Flux Motion ◽  
Activated Flux

Thermally activated flux creep in strongly layered high-temperature superconductors

1990 ◽  
Vol 42 (4) ◽  
pp. 2143-2148 ◽  
Author(s):  
Sudip Chakravarty ◽  
Boris I. Ivlev ◽  
Yuri N. Ovchinnikov
Keyword(s):  
High Temperature ◽  
High Temperature Superconductors ◽  
Flux Creep ◽  
Thermally Activated ◽  
Activated Flux

Interfaces in high-temperature superconductors

1992 ◽  
Vol 50 (1) ◽  
pp. 234-235
Author(s):  
K.L. Merkle ◽  
Y. Gao
Keyword(s):  
High Temperature ◽  
Critical Current ◽  
Weak Link ◽  
High Temperature Superconductors ◽  
Atomic Scale ◽  
Bulk Materials ◽  
Practical Applications ◽  
Metallic Contacts ◽  
Zero Resistance ◽  
Interfacial Characteristics

After the discovery of high-temperature superconductors (HTS) five years ago, it soon became apparent that their interfacial characteristics would play an extremely important role in any foreseeable applications of these materials. In recent commercial devices, the weak-link characteristics of grain boundaries (GBs) have in fact been exploited to manufacture Josephson junction SQUIDS. On the other hand, the low critical current density of HTS is a considerable limitation for practical applications of the zero-resistance property, particularly in bulk materials. The weak-link behavior of GBs is largely responsible for this, but other types of interfaces such as those formed by metallic contacts or the interfaces between the substrate and a HTS thin film are also critical to the application of these materials. We shall review here some of the important interface issues that have been addressed by TEM techniques, but shall focus largely on the connection between the critical current (Jc) that can be transported across a grain boundary and its atomic-scale structure and composition.

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