Preparation, Structure and Properties of VOx and TiO2 Thin Films By Mocvd

1989 ◽  
Vol 168 ◽  
Author(s):  
H. L. M. Chang ◽  
J. C. Parker ◽  
H. You ◽  
J. J. xu ◽  
D. J. Lam
Keyword(s):  
Thin Films ◽  
Vanadium Oxide ◽  
Oxide Films ◽  
Cold Wall ◽  
Structure And Properties ◽  
Processing Parameter ◽  
Tio2 Thin Films ◽  
Low Pressure Mocvd ◽  
Vanadium Oxide Thin Films ◽  
Epitaxial Oxide

AbstractTitanium and vanadium oxide thin films have been prepared in a cold wall low pressure MOCVD system for the study of MOCVD processing of epitaxial oxide films. Films were deposited on Si(111) and sapphire (0001) and (1120) at temperatures from 400 to 800°C. Processing parameter-structureproperty relationship was examined in detail and the result is presented.

Reactive DC Magnetron Sputtering of Vanadium Oxide Thin Films

2008 ◽  
Vol 587-588 ◽  
pp. 343-347 ◽  
Author(s):  
C. Batista ◽  
J. Mendes ◽  
Vasco Teixeira ◽  
Joaquim Carneiro
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Vanadium Oxide ◽  
Single Phase ◽  
Oxide Films ◽  
Wide Field ◽  
Dc Magnetron Sputtering ◽  
Oxide Thin Films ◽  
Vanadium Oxide Thin Films ◽  
Vanadium Oxide Films

Vanadium oxides are a class of materials with outstanding physical and chemical properties. They find a wide field of technological applications such as optical and electrical switching devices, light detectors, temperature sensors, micro batteries, etc. There are several studies regarding the production of vanadium oxide films by radio-frequency (RF) magnetron sputtering, and with increasing interest on the thermochromic VO2 phase. However, literature with focus on vanadium oxide films deposited by direct current (DC) magnetron sputtering is very limited. In this work, we have successfully deposited vanadium oxide thin films by reactive DC magnetron sputtering under several processing conditions. The effect of substrate type, temperature, and O2/Ar flow ratio on phase formation has been studied. Structural analysis and phase determination have been carried out by X-ray diffractometry (XRD). Some single phase samples were also analysed with respect to surface morphology by means of scanning electron microscopy (SEM) and atomic force microscopy (AFM). The thermochromic behaviour of single phase VO2(M) films has been evaluated by optical spectrophotometry.

scholarly journals Characterization of R.F. Magnetron Sputtered Vanadium Oxide Thin Films and Intercalation of Lithium in the Oxide Films

2004 ◽  
Vol 72 (4) ◽  
pp. 261-265 ◽  
Author(s):  
Naoaki KUMAGAI ◽  
Shinichi KOMABA ◽  
Osamu NAKANO ◽  
Mamoru BABA ◽  
Henri GROULT ◽  
...  
Keyword(s):  
Thin Films ◽  
Vanadium Oxide ◽  
Oxide Films ◽  
Oxide Thin Films ◽  
Vanadium Oxide Thin Films

scholarly journals The Effect of Growth Parameters on Electrophysical and Memristive Properties of Vanadium Oxide Thin Films

Molecules ◽  
2020 ◽  
Vol 26 (1) ◽  
pp. 118
Author(s):  
Roman V. Tominov ◽  
Zakhar E. Vakulov ◽  
Vadim I. Avilov ◽  
Daniil A. Khakhulin ◽  
Nikita V. Polupanov ◽  
...  
Keyword(s):  
Thin Films ◽  
Vanadium Oxide ◽  
Growth Parameters ◽  
Oxide Films ◽  
Laser Pulses ◽  
Oxide Thin Films ◽  
Deposition Parameters ◽  
Neuromorphic Systems ◽  
Vanadium Oxide Thin Films ◽  
Vanadium Oxide Films

We have experimentally studied the influence of pulsed laser deposition parameters on the morphological and electrophysical parameters of vanadium oxide films. It is shown that an increase in the number of laser pulses from 10,000 to 60,000 and an oxygen pressure from 3 × 10−4 Torr to 3 × 10−2 Torr makes it possible to form vanadium oxide films with a thickness from 22.3 ± 4.4 nm to 131.7 ± 14.4 nm, a surface roughness from 7.8 ± 1.1 nm to 37.1 ± 11.2 nm, electron concentration from (0.32 ± 0.07) × 1017 cm−3 to (42.64 ± 4.46) × 1017 cm−3, electron mobility from 0.25 ± 0.03 cm2/(V·s) to 7.12 ± 1.32 cm2/(V·s), and resistivity from 6.32 ± 2.21 Ω·cm to 723.74 ± 89.21 Ω·cm. The regimes at which vanadium oxide films with a thickness of 22.3 ± 4.4 nm, a roughness of 7.8 ± 1.1 nm, and a resistivity of 6.32 ± 2.21 Ω·cm are obtained for their potential use in the fabrication of ReRAM neuromorphic systems. It is shown that a 22.3 ± 4.4 nm thick vanadium oxide film has the bipolar effect of resistive switching. The resistance in the high state was (89.42 ± 32.37) × 106 Ω, the resistance in the low state was equal to (6.34 ± 2.34) × 103 Ω, and the ratio RHRS/RLRS was about 14,104. The results can be used in the manufacture of a new generation of micro- and nanoelectronics elements to create ReRAM of neuromorphic systems based on vanadium oxide thin films.

Low temperature charge carrier hopping transport mechanism in vanadium oxide thin films grown using pulsed dc sputtering

2009 ◽  
Vol 94 (22) ◽  
pp. 222110 ◽  
Author(s):  
S. S. N. Bharadwaja ◽  
C. Venkatasubramanian ◽  
N. Fieldhouse ◽  
S. Ashok ◽  
M. W. Horn ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Charge Carrier ◽  
Vanadium Oxide ◽  
Transport Mechanism ◽  
Oxide Thin Films ◽  
Hopping Transport ◽  
Dc Sputtering ◽  
Pulsed Dc ◽  
Vanadium Oxide Thin Films

Electron stimulated desorption of vanadyl-groups from vanadium oxide thin films on Ru(0001) probed with STM

2021 ◽  
Vol 23 (14) ◽  
pp. 8439-8445
Author(s):  
Ying Wang ◽  
Piotr Igor Wemhoff ◽  
Mikołaj Lewandowski ◽  
Niklas Nilius
Keyword(s):  
Thin Films ◽  
Vanadium Oxide ◽  
Electron Injection ◽  
Underlying Mechanism ◽  
Desorption Rate ◽  
Oxide Thin Films ◽  
Current Dependence ◽  
Electron Stimulated Desorption ◽  
Vanadium Oxide Thin Films

Electron injection from an STM tip has been used to desorb individual vanadyl groups from vanadium oxide thin films. The underlying mechanism is analyzed from the bias and current dependence of the desorption rate.

scholarly journals The Effects of Nano-Crystal Distribution and Structure on the Transport in Vanadium Oxide Thin Films

2010 ◽  
Vol 16 (S2) ◽  
pp. 1654-1655
Author(s):  
BD Gauntt ◽  
EC Dickey
Keyword(s):  
Thin Films ◽  
Vanadium Oxide ◽  
Oxide Thin Films ◽  
Vanadium Oxide Thin Films ◽  
Nano Crystal

Extended abstract of a paper presented at Microscopy and Microanalysis 2010 in Portland, Oregon, USA, August 1 – August 5, 2010.

Comparison of vanadium oxide thin films deposited from commercial and solution combustion synthesised powders

2018 ◽  
Vol 36 (1) ◽  
pp. 41-48 ◽  
Author(s):  
M. Seref Sonmez ◽  
Esma Yilmaz ◽  
Duygu Kalkan ◽  
Esra Ozkan Zayim
Keyword(s):  
Thin Films ◽  
Vanadium Oxide ◽  
Oxide Thin Films ◽  
Solution Combustion ◽  
Vanadium Oxide Thin Films
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