Interfacial Failure In Ti/Sio2 and Ti/AIN System And Temperature Dependence Of Hardness Of AIN

1989 ◽  
Vol 167 ◽  
Author(s):  
T. Liu ◽  
R. Notis ◽  
Y. T. Chou
Keyword(s):  
Temperature Dependence ◽  
Room Temperature ◽  
Interfacial Failure ◽  
Load Dependence

AbstractThe load dependence of interracial failure induced by microindentation has been studied. It is demonstrated experimentally that substrate lateral defects induced by indentation contribute significantly to interracial failure. The microhardness of translucent AIN was measured at temperatures up to 1200°C. The hardness decreased from 10.6GPa at room temperature to 4.0GPa at 1200°C.

ABOUT HEAT CAPACITY OF TITANIUM CARBIDE TiCx

2019 ◽  
pp. 56-66
Author(s):  
I. Khidirov ◽  
V. V. Getmanskiy ◽  
A. S. Parpiev ◽  
Sh. A. Makhmudov
Keyword(s):  
Heat Capacity ◽  
High Temperature ◽  
Titanium Carbide ◽  
Temperature Dependence ◽  
Carbon Concentration ◽  
Room Temperature ◽  
Thermodynamic Characteristics ◽  
Liquid Nitrogen Temperature ◽  
Analysis Data ◽  
Thermal Excitation

This work relates to the field of thermophysical parameters of refractory interstitial alloys. The isochoric heat capacity of cubic titanium carbide TiCx has been calculated within the Debye approximation in the carbon concentration  range x = 0.70–0.97 at room temperature (300 K) and at liquid nitrogen temperature (80 K) through the Debye temperature established on the basis of neutron diffraction analysis data. It has been found out that at room temperature with decrease of carbon concentration the heat capacity significantly increases from 29.40 J/mol·K to 34.20 J/mol·K, and at T = 80 K – from 3.08 J/mol·K to 8.20 J/mol·K. The work analyzes the literature data and gives the results of the evaluation of the high-temperature dependence of the heat capacity СV of the cubic titanium carbide TiC0.97 based on the data of neutron structural analysis. It has been proposed to amend in the Neumann–Kopp formula to describe the high-temperature dependence of the titanium carbide heat capacity. After the amendment, the Neumann–Kopp formula describes the results of well-known experiments on the high-temperature dependence of the heat capacity of the titanium carbide TiCx. The proposed formula takes into account the degree of thermal excitation (a quantized number) that increases in steps with increasing temperature.The results allow us to predict the thermodynamic characteristics of titanium carbide in the temperature range of 300–3000 K and can be useful for materials scientists.

scholarly journals Temperature dependence of the rigid amorphous fraction of poly(butylene succinate)

RSC Advances ◽  
2021 ◽  
Vol 11 (41) ◽  
pp. 25731-25737
Author(s):  
Maria Cristina Righetti ◽  
Maria Laura Di Lorenzo ◽  
Patrizia Cinelli ◽  
Massimo Gazzano
Keyword(s):  
Body Temperature ◽  
Temperature Dependence ◽  
Human Body ◽  
Room Temperature ◽  
Rigid Amorphous Fraction ◽  
Butylene Succinate ◽  
Amorphous Fraction ◽  
Human Body Temperature ◽  
Rigid Amorphous

At room temperature and at the human body temperature, all the amorphous fraction is mobile in poly(butylene succinate).

Electrical and Optical Properties of Si+ and P+ Implanted InP:Fe

1990 ◽  
Vol 201 ◽  
Author(s):  
Honglie Shen ◽  
Genqing Yang ◽  
Zuyao Zhou ◽  
Guanqun Xia ◽  
Shichang Zou
Keyword(s):  
Optical Properties ◽  
Silicon Nitride ◽  
Temperature Dependence ◽  
Optimal Condition ◽  
Room Temperature ◽  
Broad Band ◽  
Photoluminescence Spectra ◽  
Electrical And Optical Properties ◽  
Spectrum Measurement ◽  
Single Implant

AbstractDual implantations of Si+ and P+ into InP:Fe were performed both at 200°C and room temperature. Si+ ions were implanted by 150keV with doses ranging from 5×1013 /cm2 to 1×1015 /cm2, while P+ ions were implanted by 110keV. 160keV and 180keV with doses ranging from 1×l013 /cm2 to 1×1015 /cm2. Hall measurements and photoluminescence spectra were used to characterize the silicon nitride encapsulated annealed samples. It was found that enhanced activation can be obtained by Si+ and P+ dual implantations. The optimal condition for dual implantations is that the atomic distribution of implanted P overlaps that of implanted si with the same implant dose. For a dose of 5×l014 /cm2, the highest activation for dual implants is 70% while the activation for single implant is 40% after annealing at 750°C for 15 minutes. PL spectrum measurement was carried out at temperatures from 11K to 100K. A broad band at about 1.26eV was found in Si+ implanted samples, of which the intensity increased with increasing of the Si dose and decreased with increasing of the co-implant P+ dose. The temperature dependence of the broad band showed that it is a complex (Vp-Sip) related band. All these results indicate that silicon is an amphoteric species in InP.

Temperature dependence of chlorine-35 N.Q.R. in 2,6-Dichlorophenol

1978 ◽  
Vol 31 (4) ◽  
pp. 791 ◽  
Author(s):  
R Chandramani ◽  
SP Basavaraju ◽  
N Devaraj
Keyword(s):  
Temperature Dependence ◽  
Room Temperature ◽  
Temperature Range ◽  
Temperature Coefficients ◽  
Brown's Method

Chlorine n.q.r, in 2,6-dichlorophenol has been investigated at temperatures from 77 K to room temperature. Two resonance lines due to chemically inequivalent sites have been observed throughout this temperature range. Torsional frequencies of the molecule have been calculated at temperatures from 77 to 300 K according to Bayer's theory and Brown's method. Also the temperature coefficients of the torsional frequencies have been calculated.

scholarly journals PSEUDO-GAP FEATURES OF INTRINSIC TUNNELING IN (HgBr2)-Bi2212 SINGLE CRYSTALS

1999 ◽  
Vol 13 (29n31) ◽  
pp. 3758-3763 ◽  
Author(s):  
AUGUST YURGENS ◽  
DAG WINKLER ◽  
TORD CLAESON ◽  
SEONG-JU HWANG ◽  
JIN-HO CHOY
Keyword(s):  
Temperature Dependence ◽  
Single Crystals ◽  
Room Temperature ◽  
Unit Cell ◽  
Superconducting Gap ◽  
Axis Direction ◽  
Temperature Range ◽  
Dynamic Conductance

The c-axis tunneling properties of both pristine Bi2212 and its HgBr 2 intercalate have been measured in the temperature range 4.2-250 K. Lithographically patterned 7-10 unit-cell heigh mesa structures on the surfaces of these single crystals were investigated. Clear SIS-like tunneling curves for current applied in the c-axis direction have been observed. The dynamic conductance d I/ d V(V) shows both sharp peaks corresponding to a superconducting gap edge and a dip feature beyond the gap, followed by a wide maximum, which persists up to a room temperature. Shape of the temperature dependence of the c-axis resistance does not change after the intercalation suggesting that a coupling between CuO 2-bilayers has little effect on the pseudogap.

NQR and Crystal Structure of 4,5-Dichloroimidazole, C3H2N2Cl2

1992 ◽  
Vol 47 (1-2) ◽  
pp. 177-181 ◽  
Author(s):  
Shi-Qi Dou ◽  
Alarich Weiss
Keyword(s):  
Crystal Structure ◽  
Phase Transition ◽  
Temperature Dependence ◽  
Room Temperature ◽  
Unit Cell ◽  
Space Group ◽  
Temperature Range ◽  
Temperature Coefficients ◽  
Group D

AbstractThe two line 35Cl NQR spectrum of 4,5-dichloroimidazole was measured in the temperature range 77≦ T/K ≦ 389. The temperature dependence of the NQR frequencies conforms with the Bayer model and no phase transition is indicated in the curves v ( 35Cl)= f(T). Also the temperature coefficients of the 35Cl NQR frequencies are "normal". At 77 K the 35Cl NQR frequencies are 37.409 MHz and 36.172 MHz and at 389 K 35.758 MHz and 34.565 MHz. The compound crystallizes at room temperature with the tetragonal space group D44-P41212, Z = 8 molecules per unit cell; at 295 K : a = 684.2(5) pm, c = 2414.0(20) pm. The relations between the crystal structure and the NQR spectrum are discussed.

The EPR Zero-Field Splitting D and its Pressure and Temperature Dependence for Trigonal Mn2+ Centers in [Zn(H2O)6](BF4)2:Mn2+ Crystal

2006 ◽  
Vol 61 (5-6) ◽  
pp. 289-292 ◽  
Author(s):  
Hong-Gang Liu ◽  
Xiao-Xuan Wu ◽  
Wen-Chen Zheng ◽  
Lv He
Keyword(s):  
Temperature Dependence ◽  
Room Temperature ◽  
Coupling Mechanism ◽  
Zero Field ◽  
Spin Orbit Coupling ◽  
Zero Field Splitting ◽  
Field Splitting ◽  
Thermal Expansion Coefficients ◽  
Perturbation Formula ◽  
Expansion Coefficients

The EPR zero-field splitting D (= b02 ) and its pressure and temperature dependence for trigonal Mn2+ centers in low and room temperature phases in [Zn(H2O)6](BF4)2 :Mn2+ crystal are studied by a high-order perturbation formula based on the dominant spin-orbit coupling mechanism. From the studies, the local trigonal distortion angles, the local angular compressibilities and the local angular thermal expansion coefficients for Mn2+ centers in both phases of the [Zn(H2O)6](BF4)2 crystal are estimated. The results are discussed

scholarly journals TEMPERATURE DEPENDENCE OF CONDUCTIVITYOF UREASE DOPED POLYPYRROLE MATERIAL

2021 ◽  
Vol 9 (6) ◽  
pp. 85-90
Author(s):  
Munish Pandey ◽  
Richa Badlani
Keyword(s):  
Infrared Spectroscopy ◽  
Temperature Dependence ◽  
Room Temperature ◽  
Chemical Oxidation ◽  
Oxidation Method ◽  
Temperature Range ◽  
The Matrix

In polymerization of was carried out in the presence of to synthesize – composites by chemical oxidation method. The / have been synthesized with various compositions (10, 15, 20, 25 and 30 ) of in in aquas medium at room temperature. The – composites were characterized by infrared spectroscopy (IR). The d.c. conductivity was studied in the temperature range from 40–100°C. The dimensions of in the matrix have a greater influence on the observed conductivity values.

scholarly journals Температурная зависимость напряжения, вызванного спиновым током в гетероструктуре манганит/иридат

2021 ◽  
Vol 63 (9) ◽  
pp. 1321
Author(s):  
Т.А. Шайхулов ◽  
К.Л. Станкевич ◽  
К.И. Константинян ◽  
В.В. Демидов ◽  
Г.А. Овсянников
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Temperature Dependence ◽  
Hall Effect ◽  
Ferromagnetic Resonance ◽  
Room Temperature ◽  
Ferromagnetic Layer ◽  
Spin Current ◽  
Epitaxial Thin Film ◽  
Inverse Spin Hall Effect

The temperature dependence of the voltage induced by the spin current was studied in an epitaxial thin-film La0.7Sr0.3MnO3 / SrIrO3 heterostructure deposited on a single-crystal NdGaO3 substrate. The spin current was generated by microwave pumping under conditions of ferromagnetic resonance in the La0.7Sr0.3MnO3 ferromagnetic layer and was detected in the SrIrO3 layer due to inverse spin Hall effect. A significant increase of half-width of the spin current spectrum along with the rise of amplitude of the spin current upon cooling from room temperature (300 K) to 135 K were observed.

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