Vibrational Spectra for Hydrogenated Amorphous Semiconductors

1989 ◽  
Vol 166 ◽  
Author(s):  
W. A. Kamitakahara ◽  
R. Biswas ◽  
A. M. Bouchard ◽  
F. Gompf ◽  
J. B. Suck
Keyword(s):  
Neutron Scattering ◽  
Computer Simulations ◽  
Vibrational Spectra ◽  
Amorphous Semiconductor ◽  
Amorphous Semiconductors ◽  
Semiconductor Materials ◽  
Vibration Spectra ◽  
Hydrogenated Amorphous

ABSTRACTHydrogen vibration spectra have been measured by neutron scattering for several amorphous semiconductor materials, including a-Ge:H and a-SiC:H samples containing about 10 at. % H. The data for a-Ge:H are compared in detail with the results of realistic computer simulations.

A Quantitative Model for the Metastable Defect Creation in Amorphous Semiconductors by Kev-Electron Irradiation

1994 ◽  
Vol 336 ◽  
Author(s):  
A. Scholz ◽  
B. Schröder ◽  
H. Oechsner
Keyword(s):  
Energy Dissipation ◽  
Electron Irradiation ◽  
Quantitative Agreement ◽  
Quantitative Model ◽  
Amorphous Semiconductor ◽  
Amorphous Semiconductors ◽  
Experimental Results ◽  
Defect Creation ◽  
Hydrogenated Amorphous ◽  
Metastable Defect

ABSTRACTThe interaction mechanisms of keV-electrons with the hydrogenated Amorphous semiconductor are briefly discussed and the differences to the metastable defect creation by photons are set out. Based on the knowlegde of the energy dissipation mechanisms of keV-electrons in the hydrogenated Amorphous semiconductor, a model for the creation of metastable defects by keV-electron irradiation is developed and its quantitative agreement with the experimental results is shown.

Determination of hydrogen ordering within the β-RH2+xphase (R= Ho, Y) using electron diffraction techniques

2000 ◽  
Vol 33 (5) ◽  
pp. 1246-1252 ◽  
Author(s):  
Elizabeth J. Grier ◽  
Amanda K. Petford-Long ◽  
Roger C. C. Ward
Keyword(s):  
Electron Diffraction ◽  
Neutron Scattering ◽  
Diffraction Pattern ◽  
Computer Simulations ◽  
Fluorite Structure ◽  
Long Range Order ◽  
Hydrogen Atoms ◽  
Ordered Structures ◽  
Diffraction Patterns

Computer simulations of the electron diffraction patterns along the [\bar{1}10] zone axes of four ordered structures within the β-RH2+xphase, withR= Ho or Y, and 0 ≤x≤ 0.25, have been performed to establish whether or not the hydrogen ordering could be detected using electron diffraction techniques. Ordered structures within otherRH2+x(R= Ce, Tb) systems have been characterized with neutron scattering experiments; however, for HoH(D)2+x, neutron scattering failed to characterize the superstructure, possibly because of the lowxconcentration or lack of long-range order within the crystal. This paper aims to show that electron diffraction could overcome both of these problems. The structures considered were the stoichiometric face-centred cubic (f.c.c.) fluorite structure (x= 0), theD1 structure (x= 0.125), theD1astructure (x= 0.2) and theD022structure (x= 0.25). In the stoichiometric structure, with all hydrogen atoms located on the tetrahedral (t) sites, only the diffraction pattern from the f.c.c. metal lattice was seen; however, for the superstoichiometric structures, with the excess hydrogen atoms ordered on the octahedral (o) sites, extra reflections were visible. All the superstoichiometric structures showed extra reflections at the (001)f.c.c.and (110)f.c.c.type positions, with structureD1 also showing extra peaks at (½ ½ ½)f.c.c.. These reflections are not seen in the simulations at similar hydrogen concentrations with the hydrogen atoms randomly occupying theovacancies.

Stress originating from nanovoids in hydrogenated amorphous semiconductors

2017 ◽  
Vol 121 (9) ◽  
pp. 095307 ◽  
Author(s):  
Zumin Wang ◽  
David Flötotto ◽  
Eric J. Mittemeijer
Keyword(s):  
Amorphous Semiconductors ◽  
Hydrogenated Amorphous

Spectroscopic Study of Hydrogen Induced Defect in a-Ge:H

1990 ◽  
Vol 209 ◽  
Author(s):  
Shu Jin ◽  
Lothar Ley
Keyword(s):  
Electronic Structure ◽  
Spectroscopic Study ◽  
Density Gradient ◽  
Growth Condition ◽  
Photoelectron Spectroscopy ◽  
Defect Density ◽  
Total Yield ◽  
Structure Change ◽  
Amorphous Semiconductors ◽  
Hydrogenated Amorphous

ABSTRACTTotal yield photoelectron spectroscopy has been used to study the electronic structure change of UHV evaporated a-Ge subjected to posthydrogenation and various annealing cycles. We identify in R.T. hydrogenated a-Ge:H a new hydrogen induced defect at about Ev + 0.45eV, which can be healed upon 300°C annealing. This new defect accounts for the defect density gradient of hydrogenated amorphous semiconductors, spanning the range from ∼ 1018 cm−3 at the growing surface to 1018−1015 cm−3 in the bulk, depending on growth condition and time. The origin of this new defect is discussed.

ChemInform Abstract: Vibrational Spectra and Computer Simulations of 18O-Labelled NaY Zeolites.

ChemInform ◽  
2010 ◽  
Vol 28 (26) ◽  
pp. no-no
Author(s):  
E. GEIDEL ◽  
K. KRAUSE ◽  
H. FOERSTER ◽  
F. BAUER
Keyword(s):  
Computer Simulations ◽  
Vibrational Spectra ◽  
Nay Zeolites
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