The Effect of Reactor Pressure on the Growth of Glow Discharge a-SiN:H

1989 ◽  
Vol 165 ◽  
Author(s):  
W. J. Varhue ◽  
K. A. Pandelisev

AbstractThe electrical resistivity and N content of a-SiN:H films can be controlled by varying the reactor pressure. This appears to be a result of the increased dissociation of the ammonia feed gas by the change in the electron energy spectrum. The effect of ion bombardment of the substrate surface does not result in observable changes in film quality.

2000 ◽  
Vol 26 (11) ◽  
pp. 980-990 ◽  
Author(s):  
V. V. Ivanov ◽  
K. S. Klopovskii ◽  
D. V. Lopaev ◽  
A. T. Rakhimov ◽  
T. V. Rakhimova

2014 ◽  
Vol 44 (2) ◽  
pp. 90-95
Author(s):  
I. F. Selyanin ◽  
V. B. Deev ◽  
A. I. Kutsenko ◽  
A. A. Kutsenko ◽  
O. G. Prikhod’ko

1988 ◽  
Vol 130 (6-7) ◽  
pp. 381-384 ◽  
Author(s):  
A.V. Kuzmenko ◽  
I.R. Sagdeev ◽  
D.A. Usikov ◽  
G.M. Zaslavsky

2010 ◽  
Vol 22 (4) ◽  
pp. 918-922
Author(s):  
张信军 Zhang Xinjun ◽  
王亮平 Wang Liangping ◽  
呼义翔 Hu Yixiang ◽  
吴撼宇 Wu Hanyu ◽  
李岩 Li Yan

2019 ◽  
Vol 46 (8) ◽  
pp. 4134-4143 ◽  
Author(s):  
Binbin Ni ◽  
He Huang ◽  
Wenxun Zhang ◽  
Xudong Gu ◽  
Hong Zhao ◽  
...  

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