Development of Remote Plasma Enhanced Ohemical Vapor Deposition Processes Through the use of in Vacuo Electron Diffraction and Electron Spectroscopy

1989 ◽  
Vol 165 ◽  
Author(s):  
R. A. Rulder ◽  
G. G. Fountain ◽  
S. V. Hattangady ◽  
J. B. Posthill ◽  
R. J. Markunas
Keyword(s):  
Electron Diffraction ◽  
Vapor Deposition ◽  
Electron Spectroscopy ◽  
Process Integration ◽  
Chemical Vapor ◽  
Ex Situ ◽  
Remote Plasma ◽  
Wafer Cleaning ◽  
Cleaning Procedures ◽  
Deposition Processes

AbstractRemote plasma enhancecd chemical vapor deposition techniques have been developed for a wide variety of processes. These include SiO2, Si3N4, Si, Ge, GaN, GaAs, and a-Si:H depositions. This development has been enabled through the use of electron diffraction and electron spectroscopy techniques. These techniques have been used to qualify cleaning procedures prior to epitaxial or dielectric depositions. They have beeii used to qualify epitaxial deposition conditions by defining suitable.temperature and rate conditions. And, they have been used to evaluate cross-contamination issues. In situ techniques have been used in conjunction with ex situ characterizations to identify and correct problems in wafer cleaning, epitaxy, and process integration.

Remote Plasma-Enhanced Chemical Vapor Deposition of Epitaxial Silicon on Silicon (100) at 150°C

1989 ◽  
Vol 165 ◽  
Author(s):  
T. Hsu ◽  
B. Anthony ◽  
L. Breaux ◽  
S. Banerjee ◽  
A. Tasch
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Hydrogen Plasma ◽  
High Vacuum ◽  
Chemical Vapor ◽  
Ex Situ ◽  
Epitaxial Silicon ◽  
Remote Plasma ◽  
Silicon Epitaxy

AbstractLow temperature processing will be an essential requirement for the device sizes, structures, and materials being considered for future integrated circuit applications. In particular, low temperature silicon epitaxy will be required for new devices and technologies utilizing three-dimensional epitaxial structures and silicon-based heterostructures. A novel technique, Remote Plasma-enhanced Chemical Vapor Deposition (RPCVD), has achieved epitaxial silicon films at a temperature as low as 150°C which is believed to be the lowest temperature to date for silicon epitaxy. The process relies on a stringent ex-situ preparation procedure, a controlled wafer loading sequence, and an in-situ remote hydrogen plasma clean of the sample surface, all of which provide a surface free of carbon, oxygen, and other contaminants. The system is constructed using ultra-high vacuum technology (10-10 Torr) to achieve and maintain contaminantion-free surfaces and films. Plasma excitation of argon is used in lieu of thermal energy to provide energetic species that dissociate silane and affect surface chemical processes. Excellent crystallinity is observed from the thin films grown at 150°C using the analytical techniques of Transmission Electron Microscopy (TEM) and Nomarski interference contrast microscopy after defect etching.

Quasi-Stoichiometric Silicon Nitride Thin Films Deposited by Remote Plasma-Enhanced Chemical-Vapor Deposition

1992 ◽  
Vol 284 ◽  
Author(s):  
G. Lucovsky ◽  
Y. Ma ◽  
S. S. He ◽  
T. Yasuda ◽  
D. J. Stephens ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Chemical Vapor ◽  
Electrical Performance ◽  
Remote Plasma ◽  
Silicon Nitride Films ◽  
On Line

ABSTRACTConditions for depositing quasi-stoichiometric silicon nitride films by low-temperature, remote plasma-enhanced chemical-vapor deposition, RPECVD, have been identified using on-line Auger electron spectroscopy, AES, and off-line optical and infrared, IR, spectroscopies. Quasi-stoichiometric films, by the definition propose in this paper, do not display spectroscopic evidence for Si-Si bonds, but contain bonded-H in Si-H and Si-NH arrangements. Incorporation of RPECVD nitrides into transistor devices has demonstrated that electrical performance is optimized when the films are quasi-stoichiometric with relatively low Si-NH concentrations.

Surface Cleaning Prior to Formation of Si/SiO2 Interfaces by Remote Plasma-Enhanced Chemical Vapor Deposition (RPECVD)

1992 ◽  
Vol 259 ◽  
Author(s):  
H. H. Lamb ◽  
S. Kalem ◽  
S. Bedge ◽  
T. Yasuda ◽  
Y. Ma ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Oxide Layer ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Surface Cleaning ◽  
Ex Situ ◽  
Dangling Bond ◽  
Remote Plasma ◽  
Carbon Contamination

ABSTRACTEx situ UV/O2 cleaning prior to SiO2 deposition by RPECVD results in an SiO2/Si interface with mid-gap Dit values 2-5 times higher than interfaces formed by in situ exposure of HF-etched wafers to plasma-generated atomic O. In situ exposures to plasma-generated atomic H and atomic O are each effective at removing carbon contamination acquired by the UV/O2 cleaned wafers during transfer and introduction to the RPECVD chamber. However, in situ exposure of the photochemical oxide layer to atomic O results in higher mid-gap Dit values, and in situ exposure to atomic H results in creation of dangling bond defects (Pb centers).

Advanced CVD Barrier Technology for Copper Interconnect

1999 ◽  
Vol 564 ◽  
Author(s):  
A. Jain ◽  
O. Adetutu ◽  
B. Ekstrom ◽  
G. Hamilton ◽  
M. Herrick ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Diffusion Barrier ◽  
Vapor Deposition ◽  
Process Development ◽  
Process Integration ◽  
Chemical Vapor ◽  
Barrier Properties ◽  
Diffusion Barriers ◽  
Integration Schemes ◽  
Deposition Processes

AbstractThe adoption of copper (Cu) interconnects has imposed the challenge of developing a chemical vapor deposition (CVD) diffusion barrier technology that can be implemented for subhalf micron back-end design rules. Chemical vapor deposition (CVD) offers significantly higher film step coverage compared with sputter deposition processes. A number of materials have been proposed in literature for diffusion barriers of copper. However, the ability to suppress diffusion of Cu is only one of the barrier requirements out of a long list necessary for process integration. A number of other factors depend on the interaction of the barrier with Cu and with the underlying dielectric. We will begin with a review of some of the CVD candidate materials followed by a discussion on various interactions between barrier/Cu and barrier/dielectric that impact process reliability.In addition there are manufacturing considerations ranging from availability of high purity precursor to complex issues of process compatibility, lowering defectivity, and reducing cost-ofownership (CoO). Ultimately, the choice may not necessarily be the most robust diffusion barrier but a process which provides adequate barrier properties and can be integrated easily and cost effectively to build Cu interconnect structures. Therefore, both materials and manufacturing requirements must be considered for selecting a barrier system.A literature review is presented on some of the integration schemes and limitations they place on a barrier system. We will also share work done at Motorola on materials characterization and process development towards integration on some of the barrier processes. Finally, future trends in process development of diffusion barriers is presented.

scholarly journals Characterization of Thin Chromium Coatings Produced by PVD Sputtering for Optical Applications

Coatings ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 215
Author(s):  
Andreia A. Ferreira ◽  
Francisco J. G. Silva ◽  
Arnaldo G. Pinto ◽  
Vitor F. C. Sousa
Keyword(s):  
Automotive Industry ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Early Stage ◽  
Chemical Vapor ◽  
Experimental Tests ◽  
Scratch Test ◽  
Industrial Sectors ◽  
Deposition Processes ◽  
Optical Applications

PVD (physical vapor deposition) and CVD (chemical vapor deposition) have gained greater significance in the last two decades with the mandatory shift from electrodeposition processes to clean deposition processes due to environmental, public safety, and health concerns. Due to the frequent use of coatings in several industrial sectors, the importance of studying the chromium coating processes through PVD–sputtering can be realized, investing in a real alternative to electroplated hexavalent chromium, usually denominated by chromium 6, regularly applied in electrodeposition processes of optical products in the automotive industry. At an early stage, experimental tests were carried out to understand which parameters are most suitable for obtaining chromium coatings with optical properties. To study the coating in a broad way, thickness and roughness analysis of the coatings obtained using SEM and AFM, adhesion analyzes with the scratch-test and transmittance by spectrophotometry were carried out. It was possible to determine that the roughness and transmittance decreased with the increase in the number of layers, the thickness of the coating increased linearly, and the adhesion and resistance to climatic tests remained positive throughout the study. Thus, this study allows for the understanding that thin multilayered Cr coatings can be applied successfully to polymeric substrates regarding optical applications in the automotive industry.

Stranski–Krastanov Growth of Tungsten during Chemical Vapor Deposition Revealed by Micro-Auger Electron Spectroscopy

2004 ◽  
Vol 43 (10) ◽  
pp. 6974-6977 ◽  
Author(s):  
Suguru Noda ◽  
Takeshi Tsumura ◽  
Jota Fukuhara ◽  
Takashi Yoda ◽  
Hiroshi Komiyama ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Auger Electron Spectroscopy ◽  
Vapor Deposition ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Chemical Vapor
Sign in / Sign up

Export Citation Format

Share Document