Comparison of Ordered and Modulated Structures in InGaP Alloy Semiconductors grown by MOCVD, Chloride-Vpe and LPE Methods

1989 ◽  
Vol 163 ◽  
Author(s):  
O Ueda ◽  
T. Kato ◽  
T. Matsumoto ◽  
M. Hoshino ◽  
M. Takechi ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Liquid Phase ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Ordered Structures ◽  
Modulated Structures ◽  
Alloy Semiconductors ◽  
Photoluminescence Peak ◽  
Metalorganic Chemical

AbstractOrdered and modulated structures in InGaP alloy semiconductors grown on (001) GaAs substrates by metalorganic chemical vapor deposition, chloride-vapor phase epitaxy, and liquid phase epitaxy have been systematically studied by transmission electron microscopy. In InGaP grown by metalorganic chemical vapor deposition at 630°C, strong ordering of CuPt-type has been observed, which is associated with an abnormality in the photoluminescence peak energy. For crystals grown by chloride-vapor phase epitaxy, CuPt-type ordered structures have also been observed. However, the degree of ordering is weaker in the latter case and crystals grown at 576-740°C exhibit normal photoluminescence peak energies. On the other hand, in crystals grown by liquid phase epitaxy, no superstructure spots are found in the electron diffraction patterns and the crystals exhibit normal photoluminescence peak energies. Modulated structures do not depend on the growth method since they are observed in all crystals. From these results, it has been concluded that the ordered structures are not generated under thermal equilibrium conditions but rather by the diffusion and reconstruction of deposited atoms on the growth surface.

Growth of InSb/GaAs Layers on YIG-Coated GGG Substrate

1992 ◽  
Vol 281 ◽  
Author(s):  
C. Jelen ◽  
S. Charrière ◽  
M. Razeghi ◽  
V. J. Leppert
Keyword(s):  
Chemical Vapor Deposition ◽  
Laser Ablation ◽  
Liquid Phase ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Lattice Mismatch ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
X Ray ◽  
Metalorganic Chemical

ABSTRACTWe report the first growth of InSb and GaAs epilayers upon a garnet (YIG = Y3Fe5O12) epilayer. The YIG was deposited using liquid phase epitaxy on a garnet (GGG = Gd3Ga5O12) substrate oriented in the [111] direction. The growth of the GaAs was carried out using laser ablation and no superlattice was used to buffer the lattice mismatch between YIG and GaAs. The growth of InSb was done by low-pressure metalorganic chemical vapor deposition. From x-ray diffraction analysis it was found that the GaAs and InSb were both (110) monocrystalline epitaxial layers.

scholarly journals Metalorganic chemical vapor deposition of InN quantum dots and nanostructures

2021 ◽  
Vol 10 (1) ◽  
Author(s):  
Caroline E. Reilly ◽  
Stacia Keller ◽  
Shuji Nakamura ◽  
Steven P. DenBaars
Keyword(s):  
Quantum Dots ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Near Infrared ◽  
Optoelectronic Devices ◽  
Chemical Vapor ◽  
Electromagnetic Spectrum ◽  
Material System ◽  
Metalorganic Chemical

AbstractUsing one material system from the near infrared into the ultraviolet is an attractive goal, and may be achieved with (In,Al,Ga)N. This III-N material system, famous for enabling blue and white solid-state lighting, has been pushing towards longer wavelengths in more recent years. With a bandgap of about 0.7 eV, InN can emit light in the near infrared, potentially overlapping with the part of the electromagnetic spectrum currently dominated by III-As and III-P technology. As has been the case in these other III–V material systems, nanostructures such as quantum dots and quantum dashes provide additional benefits towards optoelectronic devices. In the case of InN, these nanostructures have been in the development stage for some time, with more recent developments allowing for InN quantum dots and dashes to be incorporated into larger device structures. This review will detail the current state of metalorganic chemical vapor deposition of InN nanostructures, focusing on how precursor choices, crystallographic orientation, and other growth parameters affect the deposition. The optical properties of InN nanostructures will also be assessed, with an eye towards the fabrication of optoelectronic devices such as light-emitting diodes, laser diodes, and photodetectors.

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