Characterization of Deep-Level Defects in Semi-Insulating GaAs and InP by Photoinduced Transient Spectroscopy (PITS)

1989 ◽  
Vol 163 ◽  
Author(s):  
Pawel Kaminski
Keyword(s):  
Hall Mobility ◽  
Deep Level ◽  
Transient Spectroscopy ◽  
The Relationship

AbstractDeep states in semi-insulating (SI) materials :GaAs:Cr ,un-doped GaAs and InP:Fe are investigated by Photoinduced Transient Spectroscopy (PITS) .The relationship between the Hall mobility in undoped SI GaAs and occurrence of the EL2-related peak in the PITS spectrum is shown.

Deep level transient spectroscopy characterization of InAs self-assembled quantum dots

2001 ◽  
Vol 89 (2) ◽  
pp. 1172-1174 ◽  
Author(s):  
V. V. Ilchenko ◽  
S. D. Lin ◽  
C. P. Lee ◽  
O. V. Tretyak
Keyword(s):  
Quantum Dots ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Self Assembled ◽  
Transient Spectroscopy

Capacitance-voltage and deep-level-transient spectroscopy characterization of defects near SiO2/SiC interfaces

2011 ◽  
Vol 109 (6) ◽  
pp. 064514 ◽  
Author(s):  
A. F. Basile ◽  
J. Rozen ◽  
J. R. Williams ◽  
L. C. Feldman ◽  
P. M. Mooney
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Capacitance Voltage ◽  
Transient Spectroscopy

Synchrotron-radiation deep level transient spectroscopy for defect characterization of semiconductors

2004 ◽  
Vol 85 (3) ◽  
pp. 413-415 ◽  
Author(s):  
H. Fujioka ◽  
T. Sekiya ◽  
Y. Kuzuoka ◽  
M. Oshima ◽  
H. Usuda ◽  
...  
Keyword(s):  
Synchrotron Radiation ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Defect Characterization ◽  
Transient Spectroscopy
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