Room-Temperature Diffusion of Mn in CdTe and the Formation of Cd1-xMnxTe

1989 ◽  
Vol 163 ◽  
Author(s):  
A. Wall ◽  
A. Raisanen ◽  
G. Haugstad ◽  
A. Franciosi
Keyword(s):  
Room Temperature ◽  
Semiconductor Surface ◽  
Surface Layers ◽  
Near Surface ◽  
Bulk Crystal Growth ◽  
Temperature Diffusion ◽  
Cation Sites ◽  
Growth Methods ◽  
Mn Concentration ◽  
Synchrotron Radiation Photoemission

AbstractDeposition of Mn at room temperature onto atomically clean CdTe(110) surfaces yields atomic interdiffusion for metal coverages <3 angstroms with Mn atoms occupying cation sites within the surface and near-surface layers of the semiconductor. Synchrotron radiation photoemission studies with variable photoelectron escape depth indicate the formation of a relatively homogeneous semiconductor surface alloy. The highest Mn concentration observed in the alloy exceeds those obtainable with bulk crystal growth methods.

Effect of Titanium Implantation on the Mechanical Properties of Silicon Nitride

1994 ◽  
Vol 354 ◽  
Author(s):  
T. Fujihana ◽  
O. Nishimura ◽  
K. Yabe ◽  
H. Hayashi ◽  
M. Iwaki
Keyword(s):  
Mechanical Properties ◽  
Friction Coefficient ◽  
Room Temperature ◽  
Surface Hardness ◽  
Atomic Fraction ◽  
Metallic State ◽  
Wear Properties ◽  
Surface Layers ◽  
Near Surface ◽  
Projected Range

AbstractA study has been made of the chemical composition and mechanical properties of Ti+-implanted Si3N4 surface layers. Implantation of 48Ti+ was performed with doses ranging from 10 to 1017 ions cm”2 at an energy of 150 keV, and at nearly room temperature. XPS was used to analyze the depth dependence of atomic fraction and chemical bonding states of Ti+-implanted layers. The near-surface hardness was measured by a Vickers hardness tester. The friction and wear properties were measured under unlubricated conditions at room temperature using a pin on disk-plane and a block on wheel-periphery configurations, in which the pin and wheel used were AISI1045 and ASTM Wl-9, respectively. Implanted Ti-atoms formed a gaussian distribution predicted by the range theory. At the average projected range, most of Ti-atoms existed as a metallic state and TiN bonding was also formed. Oxygen and carbon were found near the surface layers. In addition to the surface peak, O-atoms accumulated in front of the average projected range of Ti. Such O-atoms formed bonds of Si-oxides and Ti-oxides. Carbon existed as a graphitic state. With increasing a Ti dose, the near-surface hardness decreased, and the wear rate increased at the running-in stage having the high friction coefficient. The steady wear attributed to the stable friction coefficient appeared after the running-in stage, although such a stable stage was not observed for unimplanted Si3N4. The mechanism for the change in mechanical properties of Si3N4 induced by Ti+-implantation will be discussed in relation to XPS characteristics.

scholarly journals Magnetic properties and giant magnetoimpedance of surface modified Co-based amorphous ribbons with carbon covering

2018 ◽  
Vol 185 ◽  
pp. 10001 ◽  
Author(s):  
Elizaveta V. Golubeva ◽  
Anna A. Chlenova ◽  
Elena A. Stepanova ◽  
Galina V. Kurlyandskaya
Keyword(s):  
Room Temperature ◽  
Amorphous Ribbon ◽  
Surface Layers ◽  
Giant Magnetoimpedance ◽  
Near Surface ◽  
Amorphous Ribbons ◽  
Thin Carbon ◽  
Magnetic Biosensor ◽  
Surface Modified ◽  
Partial Compensation

Fe3Co66Cr3Si16B12 and Fe6Co60Ni10Si14B10 amorphous ribbons were surface modified in toluene at room temperature. Such a treatment resulted in deposition of thin carbon-based layer. As a result of the carbon covering deposition the stress distribution in the near-surface layers was changed due to partial compensation of the initial quenching stresses. Comparative analysis of magnetic and magnetoimpedance properties of as-quenched and surface modified ribbons confirms changes in effective magnetic anisotropy as a result of surface treatment. An increase of the corrosion resistance of the ribbons with carbon covering can be useful for the development amorphous ribbon based magnetic biosensor.

scholarly journals Высокотемпературная диффузия акцепторной примеси Ве в AlN

2022 ◽  
Vol 56 (3) ◽  
pp. 275
Author(s):  
О.П. Казарова ◽  
С.С. Нагалюк ◽  
В.А. Солтамов ◽  
М.В. Музафарова ◽  
Е.Н. Мохов
Keyword(s):  
Diffusion Process ◽  
Room Temperature ◽  
Concentration Quenching ◽  
Bulk Single Crystal ◽  
Acceptor Impurity ◽  
Luminescence Analysis ◽  
Green Luminescence ◽  
Near Surface ◽  
Temperature Diffusion ◽  
Entire Thickness

The high-temperature diffusion of an acceptor impurity of beryllium (Be) into bulk single-crystal aluminum nitride (AlN) has been studied. It is shown that the introduction of Be leads to the appearance of green luminescence of AlN, which is stable at room temperature and is observed over the entire thickness of the sample. It was shown by the method of luminescence analysis that the Be diffusion process is most efficiently realized in the temperature range from 1800°C to 2100°C and is characterized by extremely high diffusion coefficients D = 10-7 cm2/s and 10-6 cm2/s, respectively. It is shown that a prolonged diffusion process (t ≥ 1 hour) at a temperature of 2100°C leads to concentration quenching of the luminescence of near-surface AlN layers with a thickness of ≈ 80 μm, which makes it possible to estimate the concentration of beryllium impurities in the near-surface layer on the order of 10E19 cm-3.

Hgl-xCdxTe-Cr Interface Reaction

1984 ◽  
Vol 37 ◽  
Author(s):  
P. Philip ◽  
A. Wall ◽  
A. Franciosi ◽  
D. J. Peterman
Keyword(s):  
Synchrotron Radiation ◽  
Single Crystal ◽  
Exchange Reaction ◽  
Room Temperature ◽  
Interface Reaction ◽  
Surface Layers ◽  
Near Surface ◽  
Subsurface Region

AbstractWe summarize photoemission studies using Synchrotron Radiation of the formation of the HgCdTe-Cr interface at room temperature on in situcleaved single crystal substrates. Evidence is found of a Cr-Hg exchange reaction in the subsurface region. The surface and near surface layers appear completely depleted of mercury.

scholarly journals Plasmonic semiconductor nanogroove array enhanced broad spectral band millimetre and terahertz wave detection

2021 ◽  
Vol 10 (1) ◽  
Author(s):  
Jinchao Tong ◽  
Fei Suo ◽  
Tianning Zhang ◽  
Zhiming Huang ◽  
Junhao Chu ◽  
...  
Keyword(s):  
Surface Plasmon ◽  
High Performance ◽  
Room Temperature ◽  
Spectral Band ◽  
High Capacity ◽  
Terahertz Wave ◽  
Semiconductor Surface ◽  
Wide Range ◽  
Low Sensitivity ◽  
Air Interfaces

AbstractHigh-performance uncooled millimetre and terahertz wave detectors are required as a building block for a wide range of applications. The state-of-the-art technologies, however, are plagued by low sensitivity, narrow spectral bandwidth, and complicated architecture. Here, we report semiconductor surface plasmon enhanced high-performance broadband millimetre and terahertz wave detectors which are based on nanogroove InSb array epitaxially grown on GaAs substrate for room temperature operation. By making a nanogroove array in the grown InSb layer, strong millimetre and terahertz wave surface plasmon polaritons can be generated at the InSb–air interfaces, which results in significant improvement in detecting performance. A noise equivalent power (NEP) of 2.2 × 10−14 W Hz−1/2 or a detectivity (D*) of 2.7 × 1012 cm Hz1/2 W−1 at 1.75 mm (0.171 THz) is achieved at room temperature. By lowering the temperature to the thermoelectric cooling available 200 K, the corresponding NEP and D* of the nanogroove device can be improved to 3.8 × 10−15 W Hz−1/2 and 1.6 × 1013 cm Hz1/2 W−1, respectively. In addition, such a single device can perform broad spectral band detection from 0.9 mm (0.330 THz) to 9.4 mm (0.032 THz). Fast responses of 3.5 µs and 780 ns are achieved at room temperature and 200 K, respectively. Such high-performance millimetre and terahertz wave photodetectors are useful for wide applications such as high capacity communications, walk-through security, biological diagnosis, spectroscopy, and remote sensing. In addition, the integration of plasmonic semiconductor nanostructures paves a way for realizing high performance and multifunctional long-wavelength optoelectrical devices.

Investigation of inhomogeneous structures of near-surface-layers in ion-implanted silicon

1998 ◽  
Vol 319 (1-2) ◽  
pp. 39-43 ◽  
Author(s):  
Z Swiatek ◽  
J.T Bonarski ◽  
R Ciach ◽  
Z.T Kuznicki ◽  
I.M Fodchuk ◽  
...  
Keyword(s):  
Surface Layers ◽  
Near Surface ◽  
Ion Implanted

Investigation of the Hydrogen Transport Processes in Crystalline Silicon of n-Type Conductivity

2007 ◽  
Vol 131-133 ◽  
pp. 425-430 ◽  
Author(s):  
Anis M. Saad ◽  
Oleg Velichko ◽  
Yu P. Shaman ◽  
Adam Barcz ◽  
Andrzej Misiuk ◽  
...  
Keyword(s):  
Hydrogen Concentration ◽  
Room Temperature ◽  
Crystalline Silicon ◽  
Transport Processes ◽  
Concentration Profiles ◽  
Hydrogen Transport ◽  
Hydrogen Atoms ◽  
Near Surface ◽  
Type Conductivity ◽  
Hydrogen Molecules

The silicon substrates were hydrogenated at approximately room temperature and hydrogen concentration profiles vs. depth have been measured by SIMS. Czochralski grown (CZ) wafers, both n- and p-type conductivity, were used in the experiments under consideration. For analysis of hydrogen transport processes and quasichemical reactions the model of hydrogen atoms diffusion and quasichemical reactions is proposed and the set of equations is obtained. The developed model takes into account the formation of bound hydrogen in the near surface region, hydrogen transport as a result of diffusion of hydrogen molecules 2 H , diffusion of metastable complexes * 2 H and diffusion of nonequilibrium hydrogen atoms. Interaction of 2 H with oxygen atoms and formation of immobile complexes “oxygen atom - hydrogen molecule” (O - H2 ) is also taken into account to explain the hydrogen concentration profiles in the substrates of n-type conductivity. The computer simulation based on the proposed equations has shown a good agreement of the calculated hydrogen profiles with the experimental data and has allowed receiving a value of the hydrogen molecules diffusivity at room temperature.

Important factors in the tracking of tropical cyclones in operational models

2021 ◽  
Author(s):  
Timothy Marchok
Keyword(s):  
Geophysical Fluid Dynamics Laboratory ◽  
Surface Layers ◽  
Individual Parameter ◽  
Near Surface ◽  
Parameter Configuration ◽  
Multiple Variables ◽  
The Mean ◽  
Tropical Cyclone Center ◽  
Multiple Configurations ◽  
Better Than

AbstractMultiple configurations of the Geophysical Fluid Dynamics Laboratory vortex tracker are tested to determine a setup that produces the best representation of a model forecast tropical cyclone center fix for the purpose of providing track guidance with the highest degree of accuracy and availability. Details of the tracking algorithms are provided, including descriptions of both the Barnes analysis used for center-fixing most variables and a separate scheme used for center-fixing wind circulation. The tracker is tested by running multiple configurations on all storms from the 2015-2017 hurricane seasons in the Atlantic and eastern Pacific Basins using forecasts from two operational National Weather Service models, the Global Forecast System (GFS) and the Hurricane Weather Research and Forecast (HWRF) model. A configuration that tracks only 850 mb geopotential height has the smallest forecast track errors of any configuration based on an individual parameter. However, a configuration composed of the mean of eleven parameters outperforms any of the configurations that are based on individual parameters. Configurations composed of subsets of the eleven parameters and including both mass and momentum variables provide results comparable to or better than the full 11-parameter configuration. In particular, a subset configuration with thickness variables excluded generally outperforms the 11-parameter mean, while one composed of variables from only the 850 mb and near-surface layers performs nearly as well as the 11-parameter mean. Tracker configurations composed of multiple variables are more reliable in providing guidance through the end of a forecast period than are tracker configurations based on individual parameters.

The Effect of As+ Ion Implantation and Annealing on the Electrical Properties of Near-Surface Layers in Graded-Gap n-Hg0.78Cd0.22Te Films

2021 ◽  
Vol 47 (2) ◽  
pp. 189-192
Author(s):  
A. V. Voitsekhovskii ◽  
S. N. Nesmelov ◽  
S. M. Dzyadukh ◽  
V. S. Varavin ◽  
S. A. Dvoretskii ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Ion Implantation ◽  
Surface Layers ◽  
Near Surface

scholarly journals Movement of the Ward Hunt Ice Shelf, Ellesmere Island, N.W.T., Canada

1971 ◽  
Vol 10 (59) ◽  
pp. 211-225 ◽  
Author(s):  
E. Dorrer
Keyword(s):  
Power Flow ◽  
Field Work ◽  
Ellesmere Island ◽  
Ice Shelf ◽  
Surface Layers ◽  
Atmospheric Refraction ◽  
Near Surface ◽  
Angle Measurements ◽  
Ice Velocity ◽  
Ice Forces

AbstractThe movement at a marginal location on the Ward Hunt Ice Shelf, northern Ellesmere Island, was determined by repeated survey measurements with theodolite and geodimeter. The purpose and duration of the field work, and reduction of the observational data are described, and the resulting mean ice velocity of 0.53 m year-1is discussed. Strain-rates of a 1 km by 1 km deformation figure are determined. The parametersnandBof Glen’s power flow law are determined by using the equations given by Nye and Weertman. The results are compared with experimental data. Computed ice stresses show that the “ridge-and-trough" structure on the ice shelf surface is not originated by internal ice forces. The elevations of all survey markers have been determined from vertical-angle measurements, and the peculiarities of atmospheric refraction in near-surface layers are discussed.

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