A New Metastable Defect in Silicon, Optical Properties and an Investigation of the Mechanism Causing the Configurational Change

1989 ◽  
Vol 163 ◽  
Author(s):  
J. H. Svensson ◽  
B. Monemar
Keyword(s):  
Optical Properties ◽  
Metastable State ◽  
Optical Spectrum ◽  
Auger Recombination ◽  
Optical Transition ◽  
Phonon Energy ◽  
Czochralski Technique ◽  
Configurational Change ◽  
Related Defect ◽  
Metastable Defect

AbstractA new optical transition with a no-phonon energy of 0.615 eV discovered in electron-irradiated silicon grown by the Czochralski technique is investigated, revealing metastable properties of the related defect. The investigation is focused on the optical properties of the transition and its associated structure and on the mechanism governing the change of defect configuration. The transformation of the defect to the metastable state is suggested to be induced by excitonic Auger recombination. A pseudo-donor model is presented as an explanation of the optical spectrum.

ELECTRONIC STRUCTURE AND OPTICAL PROPERTIES OF CRYSTALLINE C60

1992 ◽  
Vol 06 (06) ◽  
pp. 309-321 ◽  
Author(s):  
W.Y. CHING ◽  
MING-ZHU HUANG ◽  
YONG-NIAN XU ◽  
FANQI GAN
Keyword(s):  
Optical Properties ◽  
Electronic Structure ◽  
First Principles ◽  
Optical Spectrum ◽  
Local Density ◽  
Low Dielectric Constant ◽  
Experimental Measurements ◽  
Absorption Bands ◽  
Low Dielectric ◽  
Good Agreement

The electronic structure and optical properties of crystalline C 60 and their pressure dependence have been studied by first-principles local density calculations. It is shown that fcc C 60 has a low dielectric constant and an optical spectrum rich in structures. The spectrum shows five disconnected absorption bands in the 1.4 to 7.0 eV region with sharp structures in each band that can be attributed to critical point transitions. This is a manifestation of the localized molecular structure coupled with long range crystalline order unique to the C 60 crystal. At a sufficient high pressure, the structures in the optical spectrum start to merge due to the merging of the bands. These results are in good agreement with some recent experimental measurements.

The Nonlinear Optical Transition Bleaching in Tellurene

Nanoscale ◽  
2021 ◽  
Author(s):  
Yiduo Wang ◽  
Yingwei Wang ◽  
Yulan Dong ◽  
Li Zhou ◽  
Hao Wei ◽  
...  
Keyword(s):  
Optical Properties ◽  
Optical Anisotropy ◽  
Nonlinear Optical ◽  
Optical Transition ◽  
Nonlinear Optical Properties ◽  
Two Dimensional ◽  
Linear And Nonlinear

To date, outstanding linear and nonlinear optical properties of tellurene, caused by multiple two-dimensional (2D) phases and optical anisotropy, have been attracted considerable interest for potential nanophotonics applications. In this...

Optical properties of low-phonon-energy Ge30Ga5Se65:Dy2Se3 chalcogenide glasses

2000 ◽  
Vol 61 (10) ◽  
pp. 1583-1589 ◽  
Author(s):  
P Němec ◽  
B Frumarová ◽  
M Frumar ◽  
J Oswald
Keyword(s):  
Optical Properties ◽  
Chalcogenide Glasses ◽  
Phonon Energy

OPTICAL PROPERTIES OF RANDOM III–V TERNARY SEMICONDUCTING ALLOYS

2002 ◽  
Vol 16 (24) ◽  
pp. 3681-3695
Author(s):  
BIPLAB GANGULI ◽  
ABHIJIT MOOKERJEE
Keyword(s):  
Optical Properties ◽  
Matrix Element ◽  
Ternary Alloy ◽  
Transition Matrix ◽  
Optical Transition ◽  
Transition Matrix Element ◽  
Semiconducting Alloys

The formalism developed earlier for the study of optical properties of random semiconducting alloys has been applied to the ternary alloy GaAs x Sb 1-x. The effects of randomness in the optical transition matrix element has been shown within the formalism.

Interband Optical Transition Energies in Type-II PbSe/PbS Core/Shell Quantum Dots

2017 ◽  
Vol 6 (1) ◽  
pp. 80-86
Author(s):  
S. N. Saravanamoorthy ◽  
A. John Peter
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Shell Thickness ◽  
Optical Transition ◽  
Hole Pair ◽  
Core Shell ◽  
Type Ii ◽  
Electron Hole ◽  
Transition Energies ◽  
Electron Hole Pair

Electronic and optical properties of Type-II lead based core/shell semiconducting quantum dots are reported. Binding energies of electron–hole pair, optical transition energies and the absorption coefficients are investigated taking into account the geometrical confinement in PbSe/PbS core/shell quantum dot nanostructure. The energies are obtained with the increase of shell thickness for various inner core radii. The probability densities of electron and hole wave functions of radial coordinate of the core PbSe and PbS shell quantum dots are presented. The optical transition energy with the spatial confinement is brought out. The electronic properties are obtained using variational approach whereas the compact density matrix method is employed for the nonlinear optical properties. The results show that (i) a decrease in binding energy is obtained when the shell thickness increases due to more separation of electron–hole pair and (ii) the energy band gap decreases with the increase in the shell thickness resulting in the reduction of the higher energy interband transitions.

Ab initio study of oxygen vacancy effects on electronic and optical properties of NiO

MRS Advances ◽  
2016 ◽  
Vol 1 (37) ◽  
pp. 2617-2622 ◽  
Author(s):  
John Petersen ◽  
Fidele Twagirayezu ◽  
Pablo D. Borges ◽  
Luisa Scolfaro ◽  
Wilhelmus Geerts
Keyword(s):  
Optical Properties ◽  
Density Functional ◽  
Local Density ◽  
Optical Transition ◽  
Energy Levels ◽  
Density Functional Theory Calculations ◽  
Local Density Of States ◽  
Functional Theory ◽  
Electronic And Optical Properties ◽  
O Vacancy

ABSTRACTDensity Functional Theory calculations of electronic and optical properties of NiO, with and without O vacancies, are the focus of this work. Two bands, one fully occupied and the other unoccupied, induced by an O vacancy, are found in the gap. These energy levels are identified and analyzed by means of a local density of states (LDOS) calculation, and notable crystal field splitting can be seen. The real and imaginary parts of the dielectric function are calculated, and an additional optical transition can be seen at lower energy, which can be attributed to the O vacancy induced state in the band gap.

First-principles study of optical properties in Ca-doped ZnO alloys

Open Physics ◽  
2012 ◽  
Vol 10 (5) ◽  
Author(s):  
Li-Na Bai ◽  
Jian-She Lian ◽  
Wei-Tao Zheng ◽  
Qing Jiang
Keyword(s):  
Optical Properties ◽  
First Principles ◽  
Density Functional ◽  
Optical Transition ◽  
High Energy ◽  
Ternary Alloys ◽  
Potential Candidate ◽  
Coulomb Interactions ◽  
Generalized Gradient ◽  
Light Emitters

AbstractVarious electronic and optical properties of Zn1−x CaxO ternary alloys of wurtzite structure are calculated using a first-principles approach based on the framework of the generalized gradient approximation to density-functional theory. In particular, on-site Coulomb interactions are introduced, which can reasonably well predict the electronic properties and band gaps of the Zn1−x CaxO (0≤x≤0.25) system. The imaginary part of the calculated dielectric function indicates that the optical transition between O 2p states in the valence band and Zn 4s states in the conduction band shifts to the high-energy range as the Ca concentration increases. The calculated band gap shows a significant increase with increasing Ca concentration. Therefore, Zn1−x CaxO ternary alloys may be a potential candidate alloy for optoelectronic materials, and especially for light-emitters and detectors.

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