Evidence for Strong Trapping by Ionized Donors of Free Excitions in Excited States for High Purity GaAs and AlGaAs

1989 ◽  
Vol 163 ◽  
Author(s):  
S. Zemon ◽  
G. Lambert
Keyword(s):  
Band Gap ◽  
Excited States ◽  
High Purity ◽  
Free Exciton ◽  
Band Gap Energy ◽  
Excitation Energies ◽  
Electron Hole ◽  
Gap Energy

AbstractStriking increases in the intensity of donor-related, photoluminescence transitions are observed in undoped (1014-1015 cm-3) GaAs for excitation energies (Ee) in the vicinity of the band-gap energy (Eg). The enhancement has maxima at Ee consistent with excitation of the n=2 and 3 states of the free exciton (Xn=2,3) and appears to be correlated to the concentration of ionized donors, suggesting that the effects are related to capture of electron-hole pairs by ionized donors through trapping of Xn=2,3. The enhancement decreases monotonically as Ee increases to values as much as 12 meV above Eg.

Temperature Dependence Of The Fundamental Band Gap In Hexagonal GaN

1997 ◽  
Vol 482 ◽  
Author(s):  
H. Herr ◽  
V. Alex ◽  
J. Weber
Keyword(s):  
Temperature Dependence ◽  
Band Gap ◽  
Line Shape ◽  
Free Exciton ◽  
Band Gap Energy ◽  
Recombination Process ◽  
Photoluminescence Spectra ◽  
High Quality ◽  
Fundamental Band ◽  
Gap Energy

AbstractPhotoluminescence spectra of hexagonal GaN were measured in the temperature range T= 2 – 1200 K. We identify the Free Exciton (FX) as the dominant recombination process in our high quality samples for temperatures above 200 K. From the line shape fit of the FX we determine the excitonic band gap shift with temperature. An analysis according to the empirical Varshni equation gives Eg (T)-Eg(0 K) = (-α T2)/(T + β), with α = (7.3 ± 0.3)·10−4 eV/K and β = (594 ± 54) K. We have detected significant differences in the band gap energy at low and higher temperatures for GaN layers grown on different substrate materials. Heating GaN above 1200 K leads to irreversible changes in the near band gap photoluminescence spectra.

scholarly journals Synthesis of Heterostructure of ZnO@MOF-46(Zn) to Improve the Photocatalytic Performance in Methylene Blue Degradation

Crystals ◽  
2021 ◽  
Vol 11 (11) ◽  
pp. 1379
Author(s):  
Jiraporn Buasakun ◽  
Phakinee Srilaoong ◽  
Ramida Rattanakam ◽  
Tanwawan Duangthongyou
Keyword(s):  
Methylene Blue ◽  
Band Gap ◽  
Photocatalytic Performance ◽  
Degradation Process ◽  
Band Gap Energy ◽  
Photocatalytic Efficiency ◽  
Electron Hole ◽  
Methylene Blue Degradation ◽  
Gap Energy ◽  
Hole Recombination

The heterostructure of ZnO and MOF-46(Zn) was synthesized to improve the photocatalytic performance of ZnO and prove the synergistic theory that presented the coexistence of ZnO and MOF-46(Zn), providing better efficiency than pure ZnO. The heterostructure material was synthesized by using prepared ZnO as a Zn2+ source, which was reacted with 2-aminoterephthalic acid (2-ATP) as a ligand to cover the surface of ZnO with MOF-46(Zn). The ZnO reactant materials were modified by pyrolysis of various morphologies of IRMOF-3 (Zn-MOF) prepared by using CTAB as a morphology controller. The octahedral ZnO obtained at 150 mg of CTAB shows better efficiency for photodegradation, with 85.79% within 3 h and a band gap energy of 3.11 eV. It acts as a starting material for synthesis of ZnO@MOF-46(Zn). The ZnO/MOF-46(Zn) composite was further used as a photocatalyst material in the dye (methylene blue: MB) degradation process, and the performance was compared with that of pure prepared ZnO. The results show that the photocatalytic efficiency with 61.20% in the MB degradation of the heterostructure is higher than that of pure ZnO within 60 min (90.09% within 180 min). The reason for this result may be that the coexistence of ZnO and MOF-46(Zn) can absorb a larger range of energy and reduce the possibility of the electron–hole recombination process.

scholarly journals Synthesis of Binary Bi2S3/ZnO Nanorod Array Heterostructure and Their Photoelectrochemical Performance

2019 ◽  
Vol 2019 ◽  
pp. 1-10 ◽  
Author(s):  
Asla A. AL-Zahrani ◽  
Zulkarnain Zainal ◽  
Zainal Abidin Talib ◽  
Hong Ngee Lim ◽  
Laimy Mohd Fudzi ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Optical Properties ◽  
Band Gap ◽  
Morphological Structure ◽  
Band Gap Energy ◽  
Photoelectrochemical Cell ◽  
Electron Hole ◽  
X Ray ◽  
Gap Energy ◽  
Zno Nras

One of the most effective strategies to improve the photoconversion efficiency in the photoelectrochemical cell is by using an assembly of heterostructures. To do so, a simple and inexpensive method, that is successive ionic layer adsorption and reaction (SILAR), is used to deposit the narrow band gap energy semiconductor Bi2S3 on ZnO nanorod arrays (NRAs) at different SILAR cycles. The obtained binary heterostructure thin films were characterized by using X-ray diffraction (XRD), UV-Vis Spectroscopy, field emission scanning electron microscopy (FE-SEM), energy dispersive X-ray analysis (EDX), Raman spectroscopy, high-resolution transmission electron microscopy (HRTEM), and linear sweep voltammogram (LSV) to prove the crystal structure, optical properties, band gap energy, morphological structure, composition of elements, and electrical properties. The XRD revealed that ZnO NRAs possessed a single wurtzite crystal structure while Bi2S3 possessed an orthorhombic crystal structure. The as-fabricated Bi2S3/ZnO heterostructure exhibited enhanced visible light absorption and charge separation efficiency of photoinduced electron-hole pairs. The band gap energy of binary heterostructure Bi2S3/ZnO NRAs is 3.11, 3.00, 2.33, 1.96, and 1.89 eV at 3, 5, 7, 9, and 11 SILAR cycles, respectively, confirming the substantial improvement of ZnO NRA optical properties. The highest photocurrent density has been achieved by 1.92 mA/cm2 of Bi2S3/ZnO NRAs fabricated at 7 cycles, exhibiting sixfold enhancement compared to that of intrinsic ZnO NRAs (0.336 mA/cm2). This impressive enhancement was ascribed to the significant improvement in morphological structure, crystallinity, and optical properties of heterostructure photoanodes. Significant improvement was achieved in the photoelectrochemical cell (PEC) performance attributed to the fast separation, low recombination rate, and low impedance of the photoinduced electron-hole pairs as shown throughout the electrochemical impedance spectra.

Modification of optical properties of PC-PBT/Cr2O3 and PC-PBT/CdS nanocomposites by gamma irradiation

2020 ◽  
Vol 92 (2) ◽  
pp. 20402
Author(s):  
Kaoutar Benthami ◽  
Mai ME. Barakat ◽  
Samir A. Nouh
Keyword(s):  
Refractive Index ◽  
Optical Properties ◽  
Band Gap ◽  
Color Difference ◽  
Band Gap Energy ◽  
Polybutylene Terephthalate ◽  
Γ Irradiation ◽  
Gap Energy ◽  
Vis Spectroscopy ◽  
Oxygen Atoms

Nanocomposite (NCP) films of polycarbonate-polybutylene terephthalate (PC-PBT) blend as a host material to Cr2O3 and CdS nanoparticles (NPs) were fabricated by both thermolysis and casting techniques. Samples from the PC-PBT/Cr2O3 and PC-PBT/CdS NCPs were irradiated using different doses (20–110 kGy) of γ radiation. The induced modifications in the optical properties of the γ irradiated NCPs have been studied as a function of γ dose using UV Vis spectroscopy and CIE color difference method. Optical dielectric loss and Tauc's model were used to estimate the optical band gaps of the NCP films and to identify the types of electronic transition. The value of optical band gap energy of PC-PBT/Cr2O3 NCP was reduced from 3.23 to 3.06 upon γ irradiation up to 110 kGy, while it decreased from 4.26 to 4.14 eV for PC-PBT/CdS NCP, indicating the growth of disordered phase in both NCPs. This was accompanied by a rise in the refractive index for both the PC-PBT/Cr2O3 and PC-PBT/CdS NCP films, leading to an enhancement in their isotropic nature. The Cr2O3 NPs were found to be more effective in changing the band gap energy and refractive index due to the presence of excess oxygen atoms that help with the oxygen atoms of the carbonyl group in increasing the chance of covalent bonds formation between the NPs and the PC-PBT blend. Moreover, the color intensity, ΔE has been computed; results show that both the two synthesized NCPs have a response to color alteration by γ irradiation, but the PC-PBT/Cr2O3 has a more response since the values of ΔE achieved a significant color difference >5 which is an acceptable match in commercial reproduction on printing presses. According to the resulting enhancement in the optical characteristics of the developed NCPs, they can be a suitable candidate as activate materials in optoelectronic devices, or shielding sheets for solar cells.

Stability Investigation in the Optical Properties of Thermally Evaporated Ge5Se95-x Znx Thin Films

2015 ◽  
Vol 7 (3) ◽  
pp. 1923-1930
Author(s):  
Austine Amukayia Mulama ◽  
Julius Mwakondo Mwabora ◽  
Andrew Odhiambo Oduor ◽  
Cosmas Mulwa Muiva ◽  
Boniface Muthoka ◽  
...  
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Optical Band Gap ◽  
Thermal Evaporation ◽  
Optical Transition ◽  
Bulk Material ◽  
Band Gap Energy ◽  
Optical Absorbance ◽  
Gap Energy ◽  
Constituent Elements

 Selenium-based chalcogenides are useful in telecommunication devices like infrared optics and threshold switching devices. The investigated system of Ge5Se95-xZnx (0.0 ≤ x ≤ 4 at.%) has been prepared from high purity constituent elements. Thin films from the bulk material were deposited by vacuum thermal evaporation. Optical absorbance measurements have been performed on the as-deposited thin films using transmission spectra. The allowed optical transition was found to be indirect and the corresponding band gap energy determined. The variation of optical band gap energy with the average coordination number has also been investigated based on the chemical bonding between the constituents and the rigidity behaviour of the system’s network.

scholarly journals Polymer Thermal Treatment Production of Cerium Doped Willemite Nanoparticles: An Analysis of Structure, Energy Band Gap and Luminescence Properties

Materials ◽  
2021 ◽  
Vol 14 (5) ◽  
pp. 1118
Author(s):  
Ibrahim Mustapha Alibe ◽  
Khamirul Amin Matori ◽  
Mohd Hafiz Mohd Zaid ◽  
Salisu Nasir ◽  
Ali Mustapha Alibe ◽  
...  
Keyword(s):  
Solid State ◽  
Thermal Treatment ◽  
Band Gap ◽  
Optical Band Gap ◽  
Dopant Concentration ◽  
Blue Emission ◽  
Green Emission ◽  
Band Gap Energy ◽  
Solid State Lighting ◽  
Gap Energy

The contemporary market needs for enhanced solid–state lighting devices has led to an increased demand for the production of willemite based phosphors using low-cost techniques. In this study, Ce3+ doped willemite nanoparticles were fabricated using polymer thermal treatment method. The special effects of the calcination temperatures and the dopant concentration on the structural and optical properties of the material were thoroughly studied. The XRD analysis of the samples treated at 900 °C revealed the development and or materialization of the willemite phase. The increase in the dopant concentration causes an expansion of the lattice owing to the replacement of larger Ce3+ ions for smaller Zn2+ ions. Based on the FESEM and TEM micrographs, the nanoparticles size increases with the increase in the cerium ions. The mean particles sizes were estimated to be 23.61 nm at 1 mol% to 34.02 nm at 5 mol% of the cerium dopant. The optical band gap energy of the doped samples formed at 900 °C decreased precisely by 0.21 eV (i.e., 5.21 to 5.00 eV). The PL analysis of the doped samples exhibits a strong emission at 400 nm which is ascribed to the transition of an electron from localized Ce2f state to the valence band of O2p. The energy level of the Ce3+ ions affects the willemite crystal lattice, thus causing a decrease in the intensity of the green emission at 530 nm and the blue emission at 485 nm. The wide optical band gap energy of the willemite produced is expected to pave the way for exciting innovations in solid–state lighting applications.

Phase transformation and heterojunction construction of bismuth oxyiodides by grinding-assistant calcination in the presence of thiourea and its photoactivity

2021 ◽  
Author(s):  
Zichen Shen ◽  
Huanzhen Liu ◽  
Xuemei Jia ◽  
Qiaofeng Han ◽  
Huiping Bi
Keyword(s):  
Phase Transformation ◽  
Band Gap ◽  
Layered Structure ◽  
Band Gap Energy ◽  
Gap Energy

Bismuth-rich oxyhalides are promising photocatalysts due to their special layered structure and adjustable band gap energy. In this work, a series of bismuth oxyiodides were fabricated by grinding-assistant calcining in...

Quantum confinement effects and strain-induced band-gap energy shifts in core-shell Si-SiO2nanowires

2011 ◽  
Vol 83 (24) ◽  
Author(s):  
O. Demichel ◽  
V. Calvo ◽  
P. Noé ◽  
B. Salem ◽  
P.-F. Fazzini ◽  
...  
Keyword(s):  
Band Gap ◽  
Quantum Confinement ◽  
Band Gap Energy ◽  
Core Shell ◽  
Confinement Effects ◽  
Gap Energy ◽  
Quantum Confinement Effects
Sign in / Sign up

Export Citation Format

Share Document