MOCVD Growth and Doping of ZnSe and Related II-VI Materials

1989 ◽  
Vol 161 ◽  
Author(s):  
Hiroshi Kukimoto
Keyword(s):  
Low Temperature ◽  
Chemical Vapor ◽  
Wide Bandgap ◽  
Epitaxial Layers ◽  
Temperature Growth ◽  
Lattice Matching ◽  
Mocvd Growth ◽  
Impurity Doping ◽  
P Type ◽  
Source Materials

ABSTRACTRecent progress in metalorganic chemical vapor deposition (MOCVD) of wide bandgap II-VI materials, especially of ZnSe, ZnS and their alloys, is discussed with emphasis on the general principles for obtaining uniform and high quality epitaxial layers and the current major issue of impurity doping for achieving conductivity control. The surface morphology and crystalline quality can be improved by a suitable choice of source materials and by lattice-matching the epitaxial layer to the substrate. By using appropriate sources, high conductivity n-type epitaxial layers of ZnSe and ZnS doped with impurities from group HI and VII of the periodic table have been successfully grown by low temperature MOCVD. We have also grown p-type ZnSe layers with carrier concentration ranging from low 1016 to high 1017 cm−3 using Li3N as the dopant. Extensive studies are now focussed on the better p-type control. High purity source materials, appropriate p-type dopants and low temperature growth are important keys.

Dependence on MOCVD Growth Temperature of The Photoluminescence Properties of ZnSe, ZnTe, and ZnSe(1-x)Te(x) Alloys and ZnSe/ZnTe Superlattices

1992 ◽  
Vol 263 ◽  
Author(s):  
B.E. Ponga ◽  
J. Calas ◽  
M. Averous ◽  
T. Cloitre ◽  
O. Briot ◽  
...  
Keyword(s):  
Low Temperature ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Organic Chemical ◽  
Physical Situation ◽  
Temperature Growth ◽  
Mocvd Growth ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition ◽  
Ethyl Amine

ABSTRACTIt has been recently shown that high quality ZnSe and ZnTc filns can be grown on GaAs using low temperature growth techniques such as Metal-Organic Chemical Vapor Deposition ( MOCVD). All samples: ZnSe, ZnTe, ZnSc(l−x)Tc(x) epilayers and ZnSe/ZnTc superlattices were grown using a novel zinc precursor, the Tri-Ethyl-Amine Di-Methyl-Zinc, while we used the classical precursors H2Se and Di-Isopropyl-Tellurium for selenium and tellurium. Investigation of the photoluminescence (PL) properties of ZnSc and ZnTe single layers enabled us to optimize the growth conditions of these compounds. The crystal growth conditions for mixed alloys and superlattices were determined by direct comparison to the aspect of low-temperature PL features. Strong PL spectra were obtained from these materials, suggesting us that tellurium has the ability to behave like an iso-clectronic center. At low concentration of tellurium in ZnSe, an interesting physical situation is observed, which we have interpreted in terms of extrinsic exciton “self-trapping” mechanism.

Low Temperature growth of poly-crystalline film of Silicon-rich Silicon-Germanium by Reactive Thermal Chemical Vapor Deposition

2000 ◽  
Vol 638 ◽  
Author(s):  
Kousaku Shimizu ◽  
Jianjun Zhang ◽  
Jeong-Woo Lee ◽  
Jun-Ichi Hanna
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Residence Time ◽  
Vapor Deposition ◽  
Gas Flow ◽  
Chemical Vapor ◽  
Temperature Growth ◽  
Low Temperature Growth ◽  
Thermal Chemical Vapor Deposition ◽  
Source Materials

AbstractLow temperature growth of poly-SiGe has been investigated by reactive thermal chemical vapor deposition method, which is a newly developed technique for preparing poly-SiGe by using redox reactions in a set of source materials, i.e., Si2H6 and GeF4. In order to prepare silicon-rich poly-SiGe of high mobility, a series of experiment on total pressure, gas flow rates of the source materials and dilution gas of He, and residence time at 450°C has been investigated.At 0.45 Torr, high crystallinity films with high silicon content were prepared, however, homogeneity of film thickness and reproducibility of the film growth was quite low for device application. For overcoming this problem, the growth condition has been studied especially in higher-pressure range of 5-15 Torr. Appropriate choice of the residence time and the gas flow ratios lead to significant improvement in the Si content in the films. Finally, more than 95% of silicon-rich poly-SiGe films, which is p-type, has 7.5 cm2/Vs of Hall mobility and (220) orientation, have been prepared at 10 Torr and 450°C within ±2% fluctuation of reproducibility which is enough to fabricate devices.

scholarly journals Practical Route for the Low-Temperature Growth of Large-Area Bilayer Graphene on Polycrystalline Nickel by Cold-Wall Chemical Vapor Deposition

ACS Omega ◽  
2021 ◽  
Author(s):  
Muhammad Aniq Shazni Mohammad Haniff ◽  
Nur Hamizah Zainal Ariffin ◽  
Poh Choon Ooi ◽  
Mohd Farhanulhakim Mohd Razip Wee ◽  
Mohd Ambri Mohamed ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Bilayer Graphene ◽  
Cold Wall ◽  
Polycrystalline Nickel ◽  
Large Area ◽  
Temperature Growth ◽  
Low Temperature Growth

Low-Temperature Growth of Carbon Nanofiber by Thermal Chemical Vapor Deposition Using CuNi Catalyst

2006 ◽  
Vol 45 (6A) ◽  
pp. 5329-5331 ◽  
Author(s):  
Katsunori Aoki ◽  
Tetsurou Yamamoto ◽  
Hiroshi Furuta ◽  
Takashi Ikuno ◽  
Shinichi Honda ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Carbon Nanofiber ◽  
Chemical Vapor ◽  
Temperature Growth ◽  
Low Temperature Growth ◽  
Thermal Chemical Vapor Deposition

scholarly journals Low-temperature growth of highly crystalline β-Ga2O3 nanowires by solid-source chemical vapor deposition

2014 ◽  
Vol 9 (1) ◽  
pp. 347 ◽  
Author(s):  
Ning Han ◽  
Fengyun Wang ◽  
Zaixing Yang ◽  
SenPo Yip ◽  
Guofa Dong ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Temperature Growth ◽  
Low Temperature Growth
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