Growth and Initial Characterization of Novel Hgte-Based II-VI Materials

1989 ◽  
Vol 161 ◽  
Author(s):  
F.G. Moore ◽  
J.C. Abele ◽  
R.E. Kremer
Keyword(s):  
Room Temperature ◽  
Energy Gap ◽  
Segregation Coefficient ◽  
Bridgman Technique ◽  
Density Measurements ◽  
Mobility Data ◽  
Initial Characterization ◽  
Vertical Bridgman ◽  
Effective Segregation Coefficient

ABSTRACTHg1−xAxTe materials where A= {Be, Mg, Ba, Sr, Ca} have been synthesized by the vertical Bridgman technique. Hydrostatic density measurements showing segregation are presented and for HgMgTe an effective segregation coefficient is obtained. For HgMgTe a relationship between bandgap E and composition x, is developed based on FTIR measurements of cut-on wavelengths. The variation of energy gap with composition is found to be comparable to that of HgMnTe and twice as rapid as that of HgCdTe. Carrier concentration and mobility data from room temperature and 77K Hall measurements are presented for samples annealed in a saturated overpressure of Mercury.

Growth and characterization of organic material 2-hydroxypyridine single crystal by modified vertical Bridgman technique

2011 ◽  
Vol 130 (3) ◽  
pp. 915-920 ◽  
Author(s):  
T. Suthan ◽  
N.P. Rajesh ◽  
C.K. Mahadevan ◽  
D. Sajan ◽  
G. Bhagavannarayana
Keyword(s):  
Single Crystal ◽  
Organic Material ◽  
Bridgman Technique ◽  
Vertical Bridgman

Growth and Characterization of CDTE and CDTE Alloys

1989 ◽  
Vol 161 ◽  
Author(s):  
S. Mcdevitt ◽  
D.R. John ◽  
J.L. Sepich ◽  
K.A. Bowers ◽  
J.F. Schetzina ◽  
...  
Keyword(s):  
Single Crystal ◽  
Distribution Coefficients ◽  
Bridgman Method ◽  
Bridgman Technique ◽  
Vertical Bridgman Method ◽  
Dislocation Densities ◽  
Crystal Properties ◽  
Vertical Bridgman ◽  
The Difference

ABSTRACTMethods used to grow bulk, CdTe crystals, effects of alloying on their perfection and typical single crystal properties are reviewed in this paper. Crystals grown by a modified horizontal Bridgman technique have lower dislocation densities than those grown by a modified vertical Bridgman method. Dislocation densities of the order of 1×103/cm2 have been observed in CdTeSe crystals grown by the former technique. Due to the difference in the distribution coefficients of Zn and Se in CdTe, CdTeSe ingots are chemically more uniform than CdZnTe ingots. Purity studies of starting materials indicate that Se substitutions may introduce more impurities than Zn additions.

Characterization of Cu-rich and Zn-poor Cu2ZnSnS4 single crystal grown by vertical Bridgman technique

2021 ◽  
Vol 574 ◽  
pp. 126336
Author(s):  
Elif Peksu ◽  
Makbule Terlemezoglu ◽  
Mehmet Parlak ◽  
Hakan Karaagac
Keyword(s):  
Single Crystal ◽  
Bridgman Technique ◽  
Vertical Bridgman
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