Spatially Indirect Optical Transitions in Semiconductor Multiple Quantum Wires

1989 ◽  
Vol 160 ◽  
Author(s):  
J. S. Weiner ◽  
G. Danan ◽  
A. Pinczuk ◽  
J. Valladares ◽  
L. N. Pfeiffer ◽  
...  
Keyword(s):  
Light Scattering ◽  
Quantum Wells ◽  
Quantum Wires ◽  
Multiple Quantum ◽  
Optical Transitions ◽  
Photoluminescence Spectra ◽  
Dimensional Electron ◽  
One Dimensional ◽  
Inelastic Light Scattering ◽  
The One

AbstractIn optical experiments with laterally patterned modulation-doped GaAs/AlGaAs quantum wells we observe spatially separate confinement of electrons and holes to one-dimensional quantum wires. We determine the one-dimensional subband spacing and Fermi energy from inelastic light scattering and photoluminescence spectra. From these measurements we directly determine the one-dimensional electron density.

scholarly journals Quantum conductance staircase of holes in silicon nanosandwiches

2019 ◽  
Vol 20 (2) ◽  
pp. 81-98
Author(s):  
N. T. Bagraev ◽  
L. E. Klyachkin ◽  
A. M. Malyarenko ◽  
V. S. Khromov
Keyword(s):  
Kinetic Energy ◽  
Quantum Wells ◽  
Quantum Wires ◽  
Energy Gap ◽  
Point Contact ◽  
Quantum Conductance ◽  
One Dimensional ◽  
Drastic Increase ◽  
Quantum Point ◽  
The One

The results of studying the quantum conductance staircase of holes in one−dimensional channels obtained by the split−gate method inside silicon nanosandwiches that are the ultra−narrow quantum well confined by the delta barriers heavily doped with boron on the n−type Si (100) surface are reported. Since the silicon quantum wells studied are ultra−narrow (~2 nm) and confined by the delta barriers that consist of the negative−U dipole boron centers, the quantized conductance of one−dimensional channels is observed at relatively high temperatures (T > 77 K). Further, the current−voltage characteristic of the quantum conductance staircase is studied in relation to the kinetic energy of holes and their sheet density in the quantum wells. The results show that the quantum conductance staircase of holes in p−Si quantum wires is caused by independent contributions of the one−dimensional (1D) subbands of the heavy and light holes; these contributions manifest themselves in the study of square−section quantum wires in the doubling of the quantum−step height (G0 = 4e2/h), except for the first step (G0 = 2e2/h) due to the absence of degeneracy of the lower 1D subband. An analysis of the heights of the first and second quantum steps indicates that there is a spontaneous spin polarization of the heavy and light holes, which emphasizes the very important role of exchange interaction in the processes of 1D transport of individual charge carriers. In addition, the field−related inhibition of the quantum conductance staircase is demonstrated in the situation when the energy of the field−induced heating of the carriers become comparable to the energy gap between the 1D subbands. The use of the split−gate method made it possible to detect the effect of a drastic increase in the height of the quantum conductance steps when the kinetic energy of holes is increased; this effect is most profound for quantum wires of finite length, which are not described under conditions of a quantum point contact. In the concluding section of this paper we present the findings for the quantum conductance staircase of holes that is caused by the edge channels in the silicon nanosandwiches prepared within frameworks of the Hall. This longitudinal quantum conductance staircase, Gxx, is revealed by the voltage applied to the Hall contacts, Vxy, to a maximum of 4e2/h. In addition to the standard plateau, 2e2/h, the variations of the Vxy voltage appear to exhibit the fractional forms of the quantum conductance staircase with the plateaus and steps that bring into correlation respectively with the odd and even fractional values.

Large optical singularities of the one-dimensional electron gas in semiconductor quantum wires

1991 ◽  
Vol 79 (11) ◽  
pp. 911-915 ◽  
Author(s):  
J.M. Calleja ◽  
A.R. Goñi ◽  
B.S. Dennis ◽  
J.S. Weiner ◽  
A. Pinczuk ◽  
...  
Keyword(s):  
Quantum Wires ◽  
Electron Gas ◽  
Dimensional Electron ◽  
One Dimensional ◽  
Dimensional Electron Gas ◽  
The One

Inelastic light scattering of valence subband transitions in GaAs/GaAlAs multiple quantum wells

1988 ◽  
Vol 196 (1-3) ◽  
pp. 619-625 ◽  
Author(s):  
B.B. Goldberg ◽  
D. Heiman ◽  
A. Pinczuk ◽  
A.C. Gossard
Keyword(s):  
Light Scattering ◽  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Inelastic Light Scattering

Optical singularities of the one-dimensional electron gas in semiconductor quantum wires

1992 ◽  
Vol 263 (1-3) ◽  
pp. 346-350 ◽  
Author(s):  
J.M. Calleja ◽  
A.R. Goñi ◽  
B.S. Dennis ◽  
J.S. Weiner ◽  
A. Pinczuk ◽  
...  
Keyword(s):  
Quantum Wires ◽  
Electron Gas ◽  
Dimensional Electron ◽  
One Dimensional ◽  
Dimensional Electron Gas ◽  
The One

Optical study of the one-dimensional electron gas in cleaved-edge-overgrown semiconductor quantum wires

2002 ◽  
Vol 12 (1-4) ◽  
pp. 722-725 ◽  
Author(s):  
J. Rubio ◽  
C. Pascual ◽  
A. Pinczuk ◽  
B.S. Dennis ◽  
L.N. Pfeiffer ◽  
...  
Keyword(s):  
Quantum Wires ◽  
Electron Gas ◽  
Optical Study ◽  
Dimensional Electron ◽  
One Dimensional ◽  
Dimensional Electron Gas ◽  
The One

Intersubband excitations in ultrathin core-shell nanowires in the one-dimensional quantum limit probed by resonant inelastic light scattering

2021 ◽  
Vol 104 (23) ◽  
Author(s):  
Sebastian Meier ◽  
Paulo E. Faria Junior ◽  
Ferdinand Haas ◽  
Emma-Sophia Heller ◽  
Florian Dirnberger ◽  
...  
Keyword(s):  
Light Scattering ◽  
Quantum Limit ◽  
Core Shell ◽  
One Dimensional ◽  
Inelastic Light Scattering ◽  
The One ◽  
Shell Nanowires
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