Electric Field Effects on the Optical Properties of InxGa1-xAs/GaAs Strained Quantum Wells and Superlattices

1989 ◽  
Vol 160 ◽  
Author(s):  
K. Gibb ◽  
C. Lacelle ◽  
A.P. Roth ◽  
B. Soucail ◽  
N. Dupuis ◽  
...  

AbstractWe have used photoluminescence excitation and photocurrent spectroscopy to investigate the electronic properties of InxGa1-xAs/GaAs strained layer quantum wells and superlattices. In quantum wells, sharp excitonic transitions between discrete energy levels are observed both in excitation and near flatband photocurrent spectra whereas superlattices show heavy-hole to conduction miniband transitions at the Brillouin mini-zone centre and edge, directly giving the electron miniband width. Applying a longitudinal electric field to the quantum wells produces a red shift of the excitons due to the quantum confined Stark effect, while in superlattices, photocurrent spectra at finite applied electric fields show for the first time in this system, the effects of Wannier-Stark quantization. The analysis of the spectra provides a precise determination of the band offset.

2014 ◽  
Vol 525 ◽  
pp. 170-176
Author(s):  
Zhao Xu Liu ◽  
Jun Zhu ◽  
Si Hua Ha

The quantum-confined Stark effect on the optical absorption of intersubband transitions in an asymmetric AlxGa1-xN/In0.3Ga0.7N/GaN quantum wells is investigated by means of the density matrix formulism. The built-in electric field generated by the piezoelectric and spontaneous polarizations competing against to the external electric fields is considered. As the result, the influences of the built-in and external electric fields on the energy potentials and the eigen stares are discussed in detail. When the positive external electric field is applied, the peak values of the absorption coefficients from 3-2, 2-1 and 3-1 transitions are reduced and moved to the lower photon energy levels. With the negative field, the exactly opposite results can be obtained. Moreover, it is indicated that the results of the wavelengths from the 3-2, 2-1 and 3-1 transitions are reduced by the positive external electric field and increased by the negative field.


NANO ◽  
2017 ◽  
Vol 12 (08) ◽  
pp. 1750097
Author(s):  
Yuehua Dai ◽  
Xu Zhang ◽  
Chengzhi Ma ◽  
Zhiyong Pan ◽  
Feifei Wang ◽  
...  

First-principles plane-wave pseudopotential calculations were performed to study the energetics and electronic structures of oxygen defects on rutile TiO2(0 0 1). The influence of the material thickness on non-linearity (NL) was studied. With the increase in the thickness, the NL became stronger. Calculating the site-projected density of states by applying an external electric field showed that the NL of the bulk is due to the exchange of electrons between O 2p orbitals and Ti 3d orbitals. Finally, the influence of oxygen defects — oxygen vacancies (Vo), oxygen interstitials (Oi), and oxygen vacancies/oxygen interstitial (Vo[Formula: see text]Oi) pairs (Frenkel pair defects) — on the NL of TiO2 was studied. These results demonstrate that the band gap ([Formula: see text] of TiO2 became gradually narrower as the electric field increased. The Stark effect and defects can lead to the splitting of degenerate energy levels. Stronger electric fields increase the band splitting and reduce [Formula: see text]. With the increase in the Vo concentration, the decrease in the splitting amplitude and width of the energy level lead to weakening of the transfer of electrons between O and Ti atoms and optimizing the NL of TiO2. Therefore, the incorporation of Vo plays a significant role in improving the NL of TiO2.


1991 ◽  
Vol 69 (3-4) ◽  
pp. 447-450 ◽  
Author(s):  
K. Gibb ◽  
C. Lacelle ◽  
Q. Sun ◽  
E. Fortin ◽  
A. P. Roth

We have investigated the quantum-confined Stark effect for a series of four InGaAs–GaAs single quantum wells using photocurrent spectroscopy. All four samples reveal quadratic Stark shifts for the lowest electron-to-heavy-hole transition at weak electric fields. The field dependence becomes subquadratic at large applied fields. The field dependent reduction of the exciton binding energy is measured and is on the order of a millielectron volt for applied electric fields approaching 80 kV cm−1.


2000 ◽  
Vol 639 ◽  
Author(s):  
Ricardo A. Rocha ◽  
Teresa Monteiro ◽  
Estela Pereira ◽  
Eduardo Alves

ABSTRACTAlGaN/GaN multi-quantum wells (MQW's) were optically studied in this work. Photoluminescence spectra revealed a quantum Stark effect in the samples. Calculated builtin electric fields were found to be significantly less than the values expected from theoretical models. An approach concerning the existence of free charges responsible for screening of the electric field is made, where we find carrier densities very similar to values described in other works.


2021 ◽  
Author(s):  
Aslan Turkoglu ◽  
Yüksel Ergun

Abstract In this study, the photoluminescence measurements of GaAs/AlGaAs multi-quantum-wells heterojunction structure grown on n+-GaAs substrates by Metal Organic Vapor Phase Epitaxy (MOVPE) method are investigated. By dropping 5145 Å wavelength laser light on the sample at room temperature and low temperatures, the transitions between the bands in the structure and the changes in these transitions under the different electric fields and temperatures are observed. In addition, by making theoretically developed self-consistent potential calculations, the subband energy levels and their corresponding wave functions of the structure under the electric field and without the electric field are calculated. The obtained numerical results were found to be in full agreement with the experimental measurements and theoretical calculations.


1999 ◽  
Vol 4 (S1) ◽  
pp. 357-362
Author(s):  
C. Wetzel ◽  
T. Takeuchi ◽  
H. Amano ◽  
I. Akasaki

Identification of the electronic band structure in AlInGaN heterostructures is the key issue in high performance light emitter and switching devices. In device-typical GaInN/GaN multiple quantum well samples in a large set of variable composition a clear correspondence of transitions in photo- and electroreflection, as well as photoluminescence is found. The effective band offset across the GaN/GaInN/GaN piezoelectric heterointerface is identified and electric fields from 0.23 - 0.90 MV/cm are directly derived. In the bias voltage dependence a level splitting within the well is observed accompanied by the quantum confined Stark effect. We furthermore find direct correspondence of luminescence bands with reflectance features. This indicates the dominating role of piezoelectric fields in the bandstructure of such typical strained layers.


One of the earliest successes of classical quantum dynamics in a field where ordinary methods had proved inadequate was the solution, by Schwarzschild and Epstein, of the problem of the hydrogen atom in an electric field. It was shown by them that under the influence of the electric field each of the energy levels in which the unperturbed atom can exist on Bohr’s original theory breaks up into a number of equidistant levels whose separation is proportional to the strength of the field. Consequently, each of the Balmer lines splits into a number of components with separations which are integral multiples of the smallest separation. The substitution of the dynamics of special relativity for classical dynamics in the problem of the unperturbed hydrogen atom led Sommerfeld to his well-known theory of the fine-structure of the levels; thus, in the absence of external fields, the state n = 1 ( n = 2 in the old notation) is found to consist of two levels very close together, and n = 2 of three, so that the line H α of the Balmer series, which arises from a transition between these states, has six fine-structure components, of which three, however, are found to have zero intensity. The theory of the Stark effect given by Schwarzschild and Epstein is adequate provided that the electric separation is so much larger than the fine-structure separation of the unperturbed levels that the latter may be regarded as single; but in weak fields, when this is no longer so, a supplementary investigation becomes necessary. This was carried out by Kramers, who showed, on the basis of Sommerfeld’s original fine-structure theory, that the first effect of a weak electric field is to split each fine-structure level into several, the separation being in all cases proportional to the square of the field so long as this is small. When the field is so large that the fine-structure is negligible in comparison with the electric separation, the latter becomes proportional to the first power of the field, in agreement with Schwarzschild and Epstein. The behaviour of a line arising from a transition between two quantum states will be similar; each of the fine-structure components will first be split into several, with a separation proportional to the square of the field; as the field increases the separations increase, and the components begin to perturb each other in a way which leads ultimately to the ordinary Stark effect.


1998 ◽  
Vol 537 ◽  
Author(s):  
C. Wetzel ◽  
T. Takeuchi ◽  
H. Amano ◽  
I. Akasaki

AbstractIdentification of the electronic band structure in AlInGaN heterostructures is the key issue in high performance light emitter and switching devices. In device-typical GaInN/GaN multiple quantum well samples in a large set of variable composition a clear correspondence of transitions in photo- and electroreflection, as well as photoluminescence is found. The effective band offset across the GaN/GaInN/GaN piezoelectric heterointerface is identified and electric fields from 0.23 - 0.90 MV/cm are directly derived. In the bias voltage dependence a level splitting within the well is observed accompanied by the quantum confined Stark effect. We furthermore find direct correspondence of luminescence bands with reflectance features. This indicates the dominating role of piezoelectric fields in the bandstructure of such typical strained layers.


2014 ◽  
Vol 70 (a1) ◽  
pp. C674-C674
Author(s):  
Sajesh Thomas ◽  
Rebecca Fuller ◽  
Alexandre Sobolev ◽  
Philip Schauer ◽  
Simon Grabowsky ◽  
...  

The effect of an electric field on the vibrational spectra, the Vibrational Stark Effect (VSE), has been utilized extensively to probe the local electric field in the active sites of enzymes [1, 2]. For this reason, the electric field and consequent polarization effects induced by a supramolecular host system upon its guest molecules attain special interest due to the implications for various biological processes. Although the host-guest chemistry of crown ether complexes and clathrates is of fundamental importance in supramolecular chemistry, many of these multicomponent systems have yet to be explored in detail using modern techniques [3]. In this direction, the electrostatic features associated with the host-guest interactions in the inclusion complexes of halogenated acetonitriles and formamide with 18-crown-6 host molecules have been analyzed in terms of their experimental charge density distribution. The charge density models provide estimates of the molecular dipole moment enhancements which correlate with the simulated values of dipole moments under electric field. The accurate electron density mapping using the multipole formalism also enable the estimation of the electric field experienced by the guest molecules. The electric field vectors thus obtained were utilized to estimate the vibrational stark effect in the nitrile (-C≡N) and carbonyl (C=O) stretching frequencies of the guest molecules via quantum chemical calculations in gas phase. The results of these calculations indicate remarkable elongation of C≡N and C=O bonds due to the electric fields. The electronic polarization in these covalent bonds induced by the field manifests as notable red shifts in their characteristic vibrational frequencies. These results derived from the charge densities are further supported by FT-IR experiments and thus establish the significance of a phenomenon that could be termed as the "supramolecular Stark effect" in crystal environment.


Open Physics ◽  
2012 ◽  
Vol 10 (2) ◽  
Author(s):  
Vladimir Gavryushin

AbstractWe have derived and analyzed the wavefunctions and energy states for an asymmetric double quantum well (ADQW), broadened due to interdiffusion or other static interface disorder effects, within a known discreet variable representative approach for solving the one-dimensional Schrodinger equation. The main advantage of this approach is that it yields the energy eigenvalues, and the eigenvectors, in semiconductor nanostructures of different shapes as well as the strengths of the optical transitions between them. The behaviour of ADQW states for the different mutual widths of coupled wells, for the different degree of broadening, and under increasing external electric field is investigated. We have found that interface broadening effects change and shift energy levels, not monotonously, but the resonant conditions near an energy of sub-band coupling regions do not strongly distort. Also, it is shown that an external electric field may help to achieve resonant conditions for inter-sub-band inverse population by intrawell emission of LO-phonons in diffuse ADQW.


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