Surface Morphologies and Interfaces of TiSi2 Formed from UHV Deposited Ti on Si

1989 ◽  
Vol 160 ◽  
Author(s):  
Hyeongtag Jeon ◽  
R. J. Nemanich ◽  
J.W. Honeycutt ◽  
G. A. Rozgonyi

AbstractThe island formation of TiSi2 and the surface morphologies and interfaces of TiSi2 on Si have been examined and related to the surface and the interface energies. Ti (200Å and 400Å) films were deposited on clean, reconstructed Si(100) and Si(111) substrates at room temperature and also at high substrate temperatures (500°C~800°C). The TiSi2 formation process is monitored with in-situ LEED and AES and the surface morphologies and interfaces are examined with ex-situ SEM and TEM. For annealing to temperatures such that the C54 phase forms, the results indicate island formation with clean reconstructed substrate regions between the islands. The TiSi2 islands show different morphology on the (100) and (111) oriented substrates. The mechanism of TiSi2 island formation is described in terms of a liquid-liquid model, and the surface and interface energies for the TiSi2 island are determined from contact angle measurements.

Nanomaterials ◽  
2022 ◽  
Vol 12 (2) ◽  
pp. 202
Author(s):  
Miranda Martinez ◽  
Anil R. Chourasia

The Ti/SnO2 interface has been investigated in situ via the technique of x-ray photoelectron spectroscopy. Thin films (in the range from 0.3 to 1.1 nm) of titanium were deposited on SnO2 substrates via the e-beam technique. The deposition was carried out at two different substrate temperatures, namely room temperature and 200 °C. The photoelectron spectra of tin and titanium in the samples were found to exhibit significant differences upon comparison with the corresponding elemental and the oxide spectra. These changes result from chemical interaction between SnO2 and the titanium overlayer at the interface. The SnO2 was observed to be reduced to elemental tin while the titanium overlayer was observed to become oxidized. Complete reduction of SnO2 to elemental tin did not occur even for the lowest thickness of the titanium overlayer. The interfaces in both the types of the samples were observed to consist of elemental Sn, SnO2, elemental titanium, TiO2, and Ti-suboxide. The relative percentages of the constituents at the interface have been estimated by curve fitting the spectral data with the corresponding elemental and the oxide spectra. In the 200 °C samples, thermal diffusion of the titanium overlayer was observed. This resulted in the complete oxidation of the titanium overlayer to TiO2 upto a thickness of 0.9 nm of the overlayer. Elemental titanium resulting from the unreacted overlayer was observed to be more in the room temperature samples. The room temperature samples showed variation around 20% for the Ti-suboxide while an increasing trend was observed in the 200 °C samples.


2004 ◽  
Vol 818 ◽  
Author(s):  
Wei Chen ◽  
Kian Ping Loh ◽  
Hai Xu ◽  
A.T.S. Wee

AbstractA honeycomb-like SiC reconstructed surface with regular, periodic porosity in the nano-scale range has been used as an effective template for the formation of monodispersed Co nanoclusters. In-situ scanning tunneling microscopy (STM) was used to study the nucleation process of the Co nanoclusters on this template. The deposition of Co at different substrate temperature was investigated by STM. It is found that the failure in the deposition of Co nanoclusters on the SiC honeycomb template with substrate temperatures higher than room temperature (RT) might be due to the high desorption rate of the adsorbed Co atoms.


2000 ◽  
Vol 650 ◽  
Author(s):  
A. Meldrum ◽  
K. Beaty ◽  
L. A. Boatner ◽  
C. W. White

ABSTRACTIrradiation-induced amorphization of Cd2Nb2O7 pyrochlore was investigated by means of in-situ temperature-dependent ion-irradiation experiments in a transmission electron microscope, combined with ex-situ ion-implantation (at ambient temperature) and RBS/channeling analysis. The in-situ experiments were performed using Ne or Xe ions with energies of 280 and 1200 keV, respectively. For the bulk implantation experiments, the incident ion energies were 70 keV (Ne+) and 320 keV (Xe2+). The critical amorphization temperature for Cd2Nb2O7 is ∼480 K (280 keV Ne+) or ∼620 K (1200 keV Xe2+). The dose for in-situ amorphization at room temperature is 0.22 dpa for Xe2+, but is 0.65 dpa for Ne+ irradiation. Both types of experiments suggest a cascade overlap mechanism of amorphization. The results were analyzed in light of available models for the crystalline-to-amorphous transformation and were compared to previous ionirradiation experiments on other pyrochlore compositions.


1992 ◽  
Vol 260 ◽  
Author(s):  
C. A. Sukow ◽  
R. J. Nemanich

ABSTRACTThe morphology of zirconium suicide grown on Si(111) is investigated and compared to that of titanium suicide on Si(111) and (100). Zirconium was deposited on atomically clean silicon in UHV, and the suicide was formed by postdeposition annealing. ZrSi2 films formed from ≤100 Å of Zr deposited on Si(111) remained continuous for anneals of 400°C to 700°C. A film formed from 50 Å of Zr on Si(111) remained continuous for anneals up to 800°C, at which point the reappearance of a partial 7×7 LEED pattern indicated island formation. The interfaces of the films, studied by TME, show roughening after suicide formation. These results are compared and contrasted with the islanding behavior of titanium suicides, and analyzed in terms of a liquid-liquid model previously used with TiSi2.


2000 ◽  
Vol 623 ◽  
Author(s):  
D.P. Eakin ◽  
M.G. Norton ◽  
D.F. Bahr

AbstractThin films of PZT were deposited onto platinized and bare single crystal NaCl using spin coating and sol-gel precursors. These films were then analyzed using in situ heating in a transmission electron microscope. The results of in situ heating are compared with those of an ex situ heat treatment in a standard furnace, mimicking the heat treatment given to entire wafers of these materials for use in MEMS and ferroelectric applications. Films are shown to transform from amorphous to nanocrystalline over the course of days when held at room temperature. While chemical variations are found between films crystallized in ambient conditions and films crystallized in the vacuum conditions of the microscope, the resulting crystal structures appear to be insensitive to these differences. Significant changes in crystal structure are found at 500°C, primarily the change from largely amorphous to the beginnings of clearly crystalline films. Crystallization does occur over the course of weeks at room temperature in these films. Structural changes are more modest in these films when heated in the TEM then those observed on actual wafers. The presence of Pt significantly influences both the resulting structure and morphology in both in situ and ex situ heated films. Without Pt present, the films appear to form small, 10 nm grains consisting of both cubic and tetragonal phases, whereas in the case of the Pt larger, 100 nm grains of a tetragonal phase are formed.


2016 ◽  
Vol 18 (8) ◽  
pp. 6037-6046 ◽  
Author(s):  
Ben A. Humphreys ◽  
Joshua D. Willott ◽  
Timothy J. Murdoch ◽  
Grant B. Webber ◽  
Erica J. Wanless

Specific anion identity and concentration dictates the direction and magnitude of the shift in LCST for a pNIPAM brush determined by in situ ellipsometry, QCM-D and static contact angle measurements.


2005 ◽  
Vol 872 ◽  
Author(s):  
Liangjin Wu ◽  
Shanthi Iyer ◽  
Kalyan Nunna ◽  
Sudhakar Bharatan ◽  
Jia Li ◽  
...  

AbstractIn this paper we report the growth of GaAsSbN/GaAs single quantum well (SQW) heterostructures by molecular beam epitaxy (MBE) and their properties. A systematic study has been carried out to determine the effect of growth conditions, such as the source shutter opening sequence and substrate temperature, on the structural and optical properties of the layers. The substrate temperatures in the range of 450-470 °C were found to be optimal. Simultaneous opening of the source shutters (SS) resulted in N incorporation almost independent of substrate temperature and Sb incorporation higher at lower substrate temperatures.The effects of ex-situ annealing in nitrogen ambient and in-situ annealing under As overpressure on the optical properties of the layers have also been investigated. A significant increase in photoluminescence (PL) intensity with reduced full width at half maxima (FWHM) in conjunction with a blue shift in the emission energy was observed on annealing the samples. In in-situ annealed samples, the PL line shapes were more symmetric and the temperature dependence of the PL peak energy indicated significant decrease in the exciton localization energy as exhibited by a less pronounced “S-shaped curve”. The “inverted S-shaped curve” observed in the temperature dependence of PL FWHM is also discussed. 1.61 μm emission with FWHM of 25 meV at 20K has been obtained in in-situ annealed GaAsSbN/GaAs SQW grown at 470 °C by SS.


2021 ◽  
Vol 6 (2) ◽  
pp. 29-33
Author(s):  
João de Deus Pereira De Moraes Segundo ◽  
Maria Oneide Silva De Moraes ◽  
Catarina Barbosa Levy ◽  
Walter Ricardo Brito

In this work, an investigation was carried out on the effect of ultraviolet light on different films. Polystyrene (PS), poly (caprolactone) (PCL), and blended films of PS/PCL were produced. Ethyl acetate (AE) was used as a solvent, and PS and PCL solutions were prepared by dissolving 250 mg in 2.5mL of AE under mechanical stirring at room temperature. The blended solutions of PS/PCL (PS:PCL) were prepared with different mass proportions, such as 90:10, 80:20, 70:30, and 60:40 into 2.5 mL of EA. The solutions were dripped with 500 µL on a glass substrate, and the films were produced with mechanical rotation of N=2000 RPM for 15 seconds using a Spin coater. The films were submitted to ultraviolet light for t=60 minutes and morphologically analyzed by optical microscopy, chemically by IR spectroscopy, and superficially by contact angle and wettability; this last analysis also investigated the effect of ultraviolet light at t=0, t=30, and t=60 minutes. The exposure of ultraviolet light on the films affected its morphologies. IR spectra showed that the photodegradation increased for larger PCL amounts into the blend. The contact angle measurements showed that after exposure to ultraviolet light, the hydrophobicity of the films increased. Therefore, the presence of PCL in the polymer mixture promoted the photodegradation of the PS/PCL films, making it attractive for developing new packaging.


2019 ◽  
Vol 131 (3) ◽  
pp. 985-1005 ◽  
Author(s):  
Gaetano Garfi ◽  
Cédric M. John ◽  
Steffen Berg ◽  
Samuel Krevor

AbstractX-ray microcomputed tomography (X-ray μ-CT) is a rapidly advancing technology that has been successfully employed to study flow phenomena in porous media. It offers an alternative approach to core scale experiments for the estimation of traditional petrophysical properties such as porosity and single-phase flow permeability. It can also be used to investigate properties that control multiphase flow such as rock wettability or mineral topology. In most applications, analyses are performed on segmented images obtained employing a specific processing pipeline on the greyscale images. The workflow leading to a segmented image is not straightforward or unique and, for most of the properties of interest, a ground truth is not available. For this reason, it is crucial to understand how image processing choices control properties estimation. In this work, we assess the sensitivity of porosity, permeability, specific surface area, in situ contact angle measurements, fluid–fluid interfacial curvature measurements and mineral composition to processing choices. We compare the results obtained upon the employment of two processing pipelines: non-local means filtering followed by watershed segmentation; segmentation by a manually trained random forest classifier. Single-phase flow permeability, in situ contact angle measurements and mineral-to-pore total surface area are the most sensitive properties, as a result of the sensitivity to processing of the phase boundary identification task. Porosity, interfacial fluid–fluid curvature and specific mineral descriptors are robust to processing. The sensitivity of the property estimates increases with the complexity of its definition and its relationship to boundary shape.


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