High Resolution X-Ray Scattering Studies of Strain in Epitaxial Thin Films of Yttrium Silicide Grown on Silicon(111)

1989 ◽  
Vol 160 ◽  
Author(s):  
L. J. Martinez-Miranda ◽  
M. P. Siegal ◽  
P. A. Heiney ◽  
J. J. Santiago-Aviles ◽  
W. R. Graham

AbstractWe have used high resolution grazing incidence x-ray scattering (GIXS) to study the in-plane and out-of-plane structure of epitaxial YSi2-x films grown on Si (111), with thicknesses ranging from 85Å to 510Å. Our results indicate that the films are strained, and that film strain increases as a function of thickness, with lattice parameters varying from a = 3.846Å/c = 4.142Å for the 85Å film to a = 3.877Å/c = 4.121Å for the 510Å film. We correlate these results with an increase in pinhole areal coverage as a function of thickness. In addition, our measurements show no evidence for the existence of ordered silicon vacancies in the films.

2020 ◽  
Vol 32 (37) ◽  
pp. 374006
Author(s):  
A R Wildes ◽  
R C C Ward ◽  
M R Wells ◽  
J P Hill ◽  
R A Cowley

1999 ◽  
Vol 14 (7) ◽  
pp. 2905-2911 ◽  
Author(s):  
Sangsub Kim ◽  
Tae Soo Kang ◽  
Jung Ho Je

Epitaxial (Ba0.5Sr0.5) TiO3 thin films of two different thickness (∼25 and ∼134 nm) on MgO(001) prepared by a pulsed laser deposition method were studied by synchrotron x-ray scattering measurements. The film grew initially with a cube-on-cube relationship, maintaining it during further growth. As the film grew, the surface of the film became significantly rougher, but the interface between the film and the substrate did not. In the early stage of growth, the film was highly strained in a tetragonal structure (c/a = 1.04) with the longer axis parallel to the surface normal direction. As the growth proceeded further, it relaxed to a cubic structure with the lattice parameter near the bulk value, and the mosaic distribution improved significantly in both in- and out-of-plane directions. The thinner film (∼25 nm) showed only one domain limited mainly by the film thickness, but the thicker film (∼134 nm) exhibited three domains along the surface normal direction.


2009 ◽  
Vol 113 (38) ◽  
pp. 12623-12627 ◽  
Author(s):  
Hong-Ji Chen ◽  
Sheng-Ying Li ◽  
Xiao-Jun Liu ◽  
Rui-Peng Li ◽  
Detlef-M. Smilgies ◽  
...  

2019 ◽  
Vol 52 (2) ◽  
pp. 247-251
Author(s):  
Detlef-M. Smilgies

Recently, surface and thin-film studies using area detectors have become prevalent. An important class of such systems are lamellar thin films formed by small molecules, liquid crystals or semicrystalline polymers. Frequently, the lamellae align more or less parallel to the substrate. Such structures can be easily discerned by their characteristic X-ray scattering close to the incident plane. This paper describes how such patterns can be simulated, in order to extract morphological information about the thin film.


2005 ◽  
Vol 38 (8) ◽  
pp. 3395-3405 ◽  
Author(s):  
Byeongdu Lee ◽  
Jinhwan Yoon ◽  
Weontae Oh ◽  
Yongtaek Hwang ◽  
Kyuyoung Heo ◽  
...  

2013 ◽  
Vol 46 (6) ◽  
pp. 1544-1550 ◽  
Author(s):  
Matej Jergel ◽  
Peter Šiffalovič ◽  
Karol Végsö ◽  
Eva Majková ◽  
Dušan Korytár ◽  
...  

The application of V-shaped channel-cut GeSi(220) and Ge(220) monochromators for one-dimensional extreme X-ray beam compression was tested on a table-top setup for grazing-incidence small-angle X-ray scattering (GISAXS) with a microfocus source. A lattice constant gradient and different asymmetry angles of the diffractors were employed to enhance the compression factor to 21 and 15, respectively. It was demonstrated that the output beam parameters in terms of the size, divergence, photon flux and spectral bandwidth surpass those of the slit collimators used traditionally in GISAXS. A beam size far below 100 µm allows a high-resolution spatial GISAXS mapping, while the reciprocal space resolution of ∼500 nm approaches the level of synchrotron measurements and allows a fast one-shot detection of high-resolution GISAXS patterns. An oversampling shifts the detection limit up to ∼1 µm. The very short design of the compact high-resolution table-top GISAXS setup is another advantage of the extreme beam compression. Benefits of V-shaped monochromators for medium-resolution X-ray diffraction experiments as a bonus application are demonstrated by a comparison with parallel channel-cut monochromators combined with a slit.


2010 ◽  
Vol 114 (24) ◽  
pp. 8033-8042 ◽  
Author(s):  
Sangwoo Jin ◽  
Tomoyasu Hirai ◽  
Byungcheol Ahn ◽  
Yecheol Rho ◽  
Kwang-Woo Kim ◽  
...  

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