Large Area Silicon Avalanche Photodiodes: Photomultiplier Tube Alternate

1982 ◽  
Vol 16 ◽  
Author(s):  
G. Reiff ◽  
M.R. Squillante ◽  
H.B. Serreze ◽  
G. Entine ◽  
Gerald C. Huth
Keyword(s):  
Scintillation Detector ◽  
Gamma Spectroscopy ◽  
Avalanche Photodiodes ◽  
Low Noise ◽  
Ease Of Use ◽  
Active Area ◽  
Large Area ◽  
Device Structure ◽  
Optical Sensitivity ◽  
Large Active Area

ABSTRACTSilicon avalanche photodiodes have recently been shown to be a potential replacement for vacuum tube photomultipliers in many nuclear scintillation detector applications. The large active area, low noise, and ease of use of these solid-state photomultipliers makes them ideally suited to scintillation detector applications where overall size and ruggedness are a major concern. Historically, avalanche photodiodes have been limited for use in this capacity by small active areas, low internal gains, and poor optical sensitivity at the wavelengths at which most solid scintillator materials emit. Recent advances as the result of research aimed directly at the solution to these problems however, have successfully demonstrated one inch active area silicon avalanche photodiodes which produce a FWHM resolution of 9.5% for Cs137 at room temperature when coupled to a 1″ × 1″ NaI(Tl) scintillation crystal. Improvements to both material quality and device structure have advanced the state-of-the-art to make silicon avalanche photodiodes a viable alternative in scintillation gamma spectroscopy as well as for large area optical, beta, and low energy x-ray detectors.

2.2 kV SiC BJTs with Low VCESAT Fast Switching and Short-Circuit Capability

2010 ◽  
Vol 645-648 ◽  
pp. 1033-1036 ◽  
Author(s):  
Martin Domeij ◽  
Carina Zaring ◽  
Andrei O. Konstantinov ◽  
Muhammad Nawaz ◽  
Jan Olov Svedberg ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
Room Temperature ◽  
Short Circuit ◽  
Device Simulation ◽  
Active Area ◽  
Large Area ◽  
Fast Switching ◽  
Large Active Area ◽  
High Dynamic ◽  
Good Agreement

This paper reports large active area (15 mm2) 4H-SiC BJTs with a low VCESAT=0.6 V at IC=20 A (JC=133 A/cm2) and an open-base breakdown voltage BVCEO=2.3 kV at T=25 °C. The corresponding room temperature specific on-resistance RSP-ON=4.5 mΩcm2 is to the authors knowledge the lowest reported value for a large area SiC BJT blocking more than 2 kV. The on-state and blocking characteristics were analyzed by device simulation and found to be in good agreement with measurements. Fast switching with VCE rise- and fall-times in the range of 20-30 ns was demonstrated for a 6 A 1200 V rated SiC BJT. It was concluded that high dynamic base currents are essential for fast switching to charge the BJT parasitic base-collector capacitance. In addition, 10 μs short-circuit capability with VCE=800 V was shown for the 1200 V BJT.

LARGE AREA GaN METAL SEMICONDUCTOR METAL (MSM) PHOTODIODE USING A THIN LOW TEMPERATURE GaN CAP LAYER

2008 ◽  
Vol 17 (01) ◽  
pp. 59-69 ◽  
Author(s):  
L. S. CHUAH ◽  
Z. HASSAN ◽  
H. ABU HASSAN ◽  
C. W. CHIN ◽  
S. M. THAHAB
Keyword(s):  
Low Temperature ◽  
Integrated Circuits ◽  
Dark Current ◽  
High Speed ◽  
Distributed Data ◽  
Large Area ◽  
Device Structure ◽  
Metal Semiconductor Metal ◽  
Large Active Area ◽  
Schottky Photodiode

Small area metal semiconductor metal (MSM) photodiode (PD) has been one of the most favoured detector choices for high speed optoelectronics integrated circuits due to their low parasitic capacitance and simple planar device structure, which is compatible with FETs. Large MSM PDs, on the other hand, can also be useful in many network and interconnect applications such as fibre distributed data interfaces. An MBE grown GaN metal semiconductor metal photodiode with a thin low temperature GaN (50nm) barrier enhancement layer is reported, which has low dark current. The detector using Nickel ( Ni ) Schottky metal fingers with 400 μm spacing on a large active area exhibit a low dark current of 1.23 mA at 10 V bias, which is about three orders of magnitude lower than that of the normal GaN Schottky photodiode.

Characterization of Large-Area Silicon Drift Detectors at High Count Rates

2000 ◽  
Vol 6 (S2) ◽  
pp. 728-729
Author(s):  
B.E. Patt ◽  
J.S. Iwanczyk ◽  
C.R. Tull
Keyword(s):  
High Energy ◽  
Light Signal ◽  
Active Area ◽  
High Energy Resolution ◽  
Large Area ◽  
High Count ◽  
Noise Component ◽  
X Ray ◽  
Large Active Area ◽  
Silicon Drift Detectors

Silicon Drift Detectors (SDD) are being developed for analytical x-ray spectrometry having large active area, high-energy resolution and capability of operating at high counting rates. The development derives from the charged coupled device (CCD) for light-signal imaging, utilizing the extremely low capacitance of the detector and readout electronics and subsequent developments of silicon drift detectors for high-energy physics applications and more recently, x-ray spectroscopy applications. The now well-known advantage of the drift detector design is that, unlike traditional planar detectors, it allows for relatively large active area while still maintaining a very low anode capacitance (60 fF). This low value of detector capacitance results in a lowering of the series-noise component and hence the overall inherent electronic noise. Additionally, the reduction of the series noise leads to faster optimal shaping time, and as a consequence this provides for extremely high count rates.

Large Active Area AlGaN Solar-Blind Schottky Avalanche Photodiodes with High Multiplication Gain

2013 ◽  
Vol 30 (3) ◽  
pp. 037803 ◽  
Author(s):  
Jian-Fei Li ◽  
Ze-Qiang Huang ◽  
Wen-Le Zhang ◽  
Hao Jiang
Keyword(s):  
Avalanche Photodiodes ◽  
Active Area ◽  
Multiplication Gain ◽  
Solar Blind ◽  
Large Active Area

scholarly journals Large Area Emission in p-Type Polymer-Based Light-Emitting Field-Effect Transistors by Incorporating Charge Injection Interlayers

Materials ◽  
2021 ◽  
Vol 14 (4) ◽  
pp. 901
Author(s):  
Gizem Acar ◽  
Muhammad Javaid Iqbal ◽  
Mujeeb Ullah Chaudhry
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Charge Injection ◽  
Limiting Factors ◽  
Hole Injection ◽  
Large Area ◽  
Device Structure ◽  
Light Emitting ◽  
Emission Area ◽  
P Type

Organic light-emitting field-effect transistors (LEFETs) provide the possibility of simplifying the display pixilation design as they integrate the drive-transistor and the light emission in a single architecture. However, in p-type LEFETs, simultaneously achieving higher external quantum efficiency (EQE) at higher brightness, larger and stable emission area, and high switching speed are the limiting factors for to realise their applications. Herein, we present a p-type polymer heterostructure-based LEFET architecture with electron and hole injection interlayers to improve the charge injection into the light-emitting layer, which leads to better recombination. This device structure provides access to hole mobility of ~2.1 cm2 V−1 s−1 and EQE of 1.6% at a luminance of 2600 cd m−2. Most importantly, we observed a large area emission under the entire drain electrode, which was spatially stable (emission area is not dependent on the gate voltage and current density). These results show an important advancement in polymer-based LEFET technology toward realizing new digital display applications.

scholarly journals In-situ diffraction experiments at the Photon Factory MX beamlines

2014 ◽  
Vol 70 (a1) ◽  
pp. C500-C500
Author(s):  
Yusuke Yamada ◽  
Naohiro Matsugaki ◽  
Masahiko Hiraki ◽  
Ryuichi Kato ◽  
Toshiya Senda
Keyword(s):  
Gas Flow ◽  
Active Area ◽  
Array Detector ◽  
Data Sets ◽  
Diffraction Experiment ◽  
X Ray ◽  
Photon Factory ◽  
Large Active Area ◽  
In Situ Diffraction

Crystallization trial is one of the most important but time-consuming steps in macromolecular crystallography. Once a crystal appears in a certain crystallization condition, the crystal is typically harvested from the crystallization drop, soaked into a cryoprotection buffer, flash-cooled with a liquid nitrogen or cold gas flow and finally evaluated its diffraction quality by an X-ray beam. During these long process, crystal may be damaged and the result from the diffraction experiment does not necessarily reflect a nature of the crystal. On in-situ diffraction experiment, where a crystal in a crystallization drop is directly irradiated to an X-ray beam, a diffraction image from a crystal without any external factors such as harvesting and cryoprotection and, as a result, a nature of crystal can be evaluated quickly. In the Photon Factory, a new table-top diffractometer for in-situ diffraction experiments has been developed. It consists of XYZ translation stages with a plate handler, on-axis viewing system with a large numeric aperture and a plate rack where ten crystallization plates can be placed. These components sit on a common plate and it is placed on the existing diffractometer table in the beamline endstation. The CCD detector with a large active area and a pixel array detector with a small active area are used for acquiring diffraction images from crystals. Dedicated control software and user interface were also developed. Since 2014, user operation of the new diffractometer was started and in-situ diffraction experiments were mainly performed for evaluations of crystallization plates from a large crystallization screening project in our facility. BL-17A [1], one of micro-focus beamlines at the Photon Factory, is planned to be upgraded in March 2015. With this upgrade, a new diffractometer, which has a capability to handle a crystallization plate, will be installed so that diffraction data sets from crystals in crystallization drop can be collected.

Low noise AlInAsSb avalanche photodiodes on InP substrates for 1.55 µm infrared applications

2021 ◽  
Author(s):  
Sri Harsha Kodati ◽  
Seung Hyun Lee ◽  
Bingtian Guo ◽  
Andrew H. Jones ◽  
Mariah Schwartz ◽  
...  
Keyword(s):  
Avalanche Photodiodes ◽  
Low Noise ◽  
Inp Substrates
Sign in / Sign up

Export Citation Format

Share Document