Role of Tip Material in Scanning Tunneling Microscopy

1989 ◽  
Vol 159 ◽  
Author(s):  
C. Julian Chen

ABSTRACTIn this paper, we show that atomic resolution in scanning tunneling microscopy (STM) originates from pz or dz2 states on the tip. Consequently, only a limited selection of tip materials can provide atomic resolution: d-band metals, for example, Pt, Ir, Pd, Rh, W, Mo; semiconductors that tend to form p-like dangling bonds, for example, Si.

1996 ◽  
Vol 76 (8) ◽  
pp. 1276-1279 ◽  
Author(s):  
A. R. H. Clarke ◽  
J. B. Pethica ◽  
J. A. Nieminen ◽  
F. Besenbacher ◽  
E. Lægsgaard ◽  
...  

2016 ◽  
Vol 42 ◽  
pp. 14-46 ◽  
Author(s):  
Oleg G. Lysenko ◽  
Vladimir I. Grushko ◽  
Sergey N. Dub ◽  
Eugene I. Mitskevich ◽  
Nikolay V. Novikov ◽  
...  

Nanoscale experiments with diamond tip that include processing, visualization and tunneling spectroscopy of the surface are presented. Single crystal diamond synthesized by the temperature gradient method under high pressure–high temperature (HPHT) conditions is proposed as a multifunctional tip for scanning tunneling microscopy (STM). Sequence of the procedures covering growing crystals with predetermined physical properties, selection of the synthesized crystals with the desired habit and their precise shaping have been developed. The original STM’s peculiarity is the electromagnetic probe-to-surface load measuring system. The results of fabrication and characterization of nanostructures for nanoelectronics, data storages and biology are demonstrated and discussed.


1997 ◽  
Vol 13 (12) ◽  
pp. 1061-1064
Author(s):  
Shi Cai-Hui ◽  
◽  
Cai Xiong-Wei ◽  
Chen Yan-Xia ◽  
Tian Zhong-Qun ◽  
...  

2001 ◽  
Vol 705 ◽  
Author(s):  
Lequn Liu ◽  
Jixin Yu ◽  
Joseph W. Lyding

AbstractThe electrical properties of single dangling bonds on the Si(100)2×1:H surface are investigated by ultra high vacuum scanning tunneling microscopy. On the N-type Si(100)2×1:H surface, single dangling bonds created by feedback controlled lithography and natural dangling bonds have a fixed negative charge. On the other hand, they are observed as neutral on the P-type Si(100)2×1:H surface. Current image tunneling spectroscopy is used to characterize both types of dangling bonds. The dangling bonds with fixed negative charge display a dramatic voltage dependence with Friedel oscillations observed in the empty state images. The neutral dangling bonds appear as protrusions in both the empty and filled state images.


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