An NMR Study of Hydrogen in Si02 Films on Silicon
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ABSTRACTWe have used solid state nuclear magnetic resonance (NMR) spectroscopy to study both “wet” and “dry” thermally grown films of SiO2 on silicon substrates. For the 5000 § wet film, grown at 1050 °C we observed a single Lorentzian line of 6 kHz HWHM (half width at half maximum). For the 500 § dry film, we observed a convolution of two lines: a) a Lorentzian of 4 kHz HWHM and b) a Gaussian of 20 kHz HWHM. The hydrogen distributions in both oxides are interpreted as a function of these lines.
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2018 ◽
Vol 11
(1)
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pp. 485-508
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Keyword(s):
2020 ◽
Vol 50
(1)
◽
pp. 493-520