Photochemical Area-Selective Etching of Si And Sio2 Using Synchrotron Radiation

1989 ◽  
Vol 158 ◽  
Author(s):  
Jun-Ichi Takahashi ◽  
Yuichi Utsumi ◽  
Tsuneo Urisu
Keyword(s):  
Synchrotron Radiation ◽  
Single Crystal ◽  
Electronic Excitation ◽  
Dopant Concentration ◽  
Etching Rate ◽  
Reaction Model ◽  
Reaction Centers ◽  
Surface Layers ◽  
Photochemical Etching ◽  
New Phenomena

ABSTRACTPhotochemical etching of Si and SiO2 using synchrotron radiation (SR) is carried out. The etching rate of SiO2 is much higher than those of poly-Si and single crystal Si. The etching rate of poly-Si increases as dopant concentration decreases. These material selectivities are quite different from those for plasma- or laser-excited etching. These new phenomena in SR-stimulated etching can be explained by a reaction model that contains reaction centers that are produced by both core and binding electronic excitation of Si and fluorinated Si in the surface layers. These centers are quenched by majority carriers.

Hgl-xCdxTe-Cr Interface Reaction

1984 ◽  
Vol 37 ◽  
Author(s):  
P. Philip ◽  
A. Wall ◽  
A. Franciosi ◽  
D. J. Peterman
Keyword(s):  
Synchrotron Radiation ◽  
Single Crystal ◽  
Exchange Reaction ◽  
Room Temperature ◽  
Interface Reaction ◽  
Surface Layers ◽  
Near Surface ◽  
Subsurface Region

AbstractWe summarize photoemission studies using Synchrotron Radiation of the formation of the HgCdTe-Cr interface at room temperature on in situcleaved single crystal substrates. Evidence is found of a Cr-Hg exchange reaction in the subsurface region. The surface and near surface layers appear completely depleted of mercury.

Insituobservation of phase transition in potassium niobate single crystal by synchrotron radiation topography

1991 ◽  
Vol 59 (16) ◽  
pp. 1952-1953 ◽  
Author(s):  
Jiyong Zhao ◽  
Ping Yang ◽  
Shusheng Jiang ◽  
Xiaoming Jiang ◽  
Jianhua Jiang ◽  
...  
Keyword(s):  
Phase Transition ◽  
Synchrotron Radiation ◽  
Single Crystal ◽  
Potassium Niobate

Refinement of the crystal structure of sieleckiite and revision of its symmetry

2017 ◽  
Vol 81 (4) ◽  
pp. 917-922
Author(s):  
Peter Elliott
Keyword(s):  
Crystal Structure ◽  
Synchrotron Radiation ◽  
Single Crystal ◽  
Diffraction Data ◽  
X Ray Diffraction ◽  
Aluminium Phosphate ◽  
Unit Cell Parameters ◽  
X Ray ◽  
Cell Parameters ◽  
Phosphate Mineral

AbstractThe crystal structure of the copper aluminium phosphate mineral sieleckiite, Cu3Al4(PO4)2 (OH)12·2H2O, from the Mt Oxide copper mine, Queensland, Australia was solved from single-crystal X-ray diffraction data utilizing synchrotron radiation. Sieleckiite has monoclinic rather than triclinic symmetry as previously reported and is space group C2/m with unit-cell parameters a = 11.711(2), b = 6.9233(14), c = 9.828(2) Å, β = 92.88(3)°, V = 795.8(3) Å3and Z = 2. The crystal structure, which has been refined to R1 = 0.0456 on the basis of 1186 unique reflections with Fo > 4σF, is a framework of corner-, edge- and face- sharing Cu and Al octahedra and PO4 tetrahedra.

Hydrogen Ion Beam Processing of Single Crystal Diamond Chips

1994 ◽  
Vol 354 ◽  
Author(s):  
Shuji Kiyohara ◽  
Iwao Miyamoto
Keyword(s):  
Surface Roughness ◽  
Single Crystal ◽  
Incidence Angle ◽  
Ion Beam ◽  
Etching Rate ◽  
Hydrogen Ion ◽  
Hydrogen Ions ◽  
Ion Beam Etching ◽  
Single Crystal Diamond ◽  
Before And After

AbstractIn order to apply ion beam etching with hydrogen ions to the ultra-precision processing of diamond tools, hydrogen ion beam etching characteristics of single crystal diamond chips with (100) face were investigated. The etching rate of diamond for 500 eV and 1000 eV hydrogen ions increases with the increase of the ion incidence angle, and eventually reaches a maximum at the ion incidence angle of approximately 50°, then may decrease with the increase of the ion incidence angle. The dependence of the etching rate on the ion incidence angle of hydrogen ions is fairly similar to that obtained with argon ions. Furthermore, the surface roughness of diamond chips before and after hydrogen ion beam etching was evaluated using an atomic force microscope. Consequently, the surface roughness after hydrogen ion beam etching decreases with the increase of the ion incidence angle within range of the ion incidence angle of 60°.

Recent diamond single-crystal x-ray optics developments at the European Synchrotron Radiation Facility

1998 ◽  
Author(s):  
Andreas K. Freund ◽  
Jacques P. Sellschop ◽  
Konrad Lieb ◽  
Sylvain Rony ◽  
Clemens Schulze-Briese ◽  
...  
Keyword(s):  
Synchrotron Radiation ◽  
Single Crystal ◽  
European Synchrotron Radiation Facility ◽  
Diamond Single Crystal ◽  
Ray Optics ◽  
X Ray

Structure and Properties of Single Crystal Al2O3 Implanted with Chromium and Zirconium

1981 ◽  
Vol 7 ◽  
Author(s):  
C. J. Mchargue ◽  
H. Naramoto ◽  
B. R. Appleton ◽  
C. W. White ◽  
J. M. Williams
Keyword(s):  
Fracture Toughness ◽  
Single Crystal ◽  
Single Crystals ◽  
Solid Solutions ◽  
Rutherford Backscattering ◽  
Structure And Properties ◽  
Indentation Fracture ◽  
Surface Layers ◽  
Indentation Fracture Toughness

ABSTRACTSingle crystals of Al2O3 were implanted with chromium and zirconium to fluences of 1 × 1016 to 1 × 1017 ions cm−2. Rutherford backscattering-channeling studies showed the surface layers to be damaged but crystalline with the implanted ions randomly distributed. The microhardness and indentation fracture toughness were higher for the random solutions than for conventionally formed solid solutions. Changes in structure and properties caused by annealing in air at temperatures up to 1800°C were studied.

Martensitic Transformation of Ni2.18Mn0.82Ga Single Crystal Observed by Synchrotron Radiation White X-Ray Diffraction

2005 ◽  
pp. 2017-2020
Author(s):  
Kazuko Inoue ◽  
Yasuo Yamaguchi ◽  
Kazumasa Ohsumi ◽  
Katsuhiro Kusaka ◽  
Takeshi Nakagawa
Keyword(s):  
Martensitic Transformation ◽  
Synchrotron Radiation ◽  
Single Crystal ◽  
X Ray Diffraction ◽  
X Ray
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