In Situ Measurement of Pulsed Laser Indxuce Carrier Ceneraticn in Doped Silicon Films

1989 ◽  
Vol 158 ◽  
Author(s):  
T. Saveshimn ◽  
M. Hara ◽  
S. Usui
Keyword(s):  
Silicon Film ◽  
Pulsed Laser ◽  
Processing Temperature ◽  
Molten Silicon ◽  
Carrier Generation ◽  
Laser Doping ◽  
Doped Silicon ◽  
Doping Technique ◽  
Dopant Atoms

ABSTRACTTransient conductance measurements were used to study rapid carrier generation during the laser doping of a silicon film. The movement of the liquid-solid interface was measured and the point of initiation of carrier generation frcn dopant atoms diffused to the molten silicon was determined. It was established that the dopant atais are activated at the nmorent the dopant diffused region solidified. Also, the laser doping technique was used to fabricate polycrystalline silicsn thin film transistors (Poly-Si TFT's) ata processing temperature of 250ºC.

Pulsed Laser-Induced Amorphization of Silicon Films

1991 ◽  
Vol 235 ◽  
Author(s):  
T. Sameshima ◽  
S. Usui
Keyword(s):  
Grain Size ◽  
Film Thickness ◽  
Silicon Film ◽  
Pulsed Laser ◽  
Temperature Sensing ◽  
Silicon Films ◽  
Molten Silicon ◽  
Quartz Substrates ◽  
Xecl Excimer Laser

ABSTRACTAmorphization of silicon films occurred through homogeneous solidification of molten silicon layers on quartz substrates induced by irradiation with a 30ns-XeCl excimer laser. The crystalline nucleation rate was obtained to be 8×1030m−3s−1. Silicon films were completely amorphized for films thinner than 18nm. Complete amorphizatoin is brought about by reduced grain size and reduced recalescence as the film thickness decreases. Recalescence was observed in situusing transient thermometry with a platinum-temperature-sensing layer when a 15nm-thick silicon film was amorphized.

In-Situ Crystallization and Doping of a-Si Film by Means of Spin-On-Glass

1994 ◽  
Vol 345 ◽  
Author(s):  
Tomoyuki Sakoda ◽  
Chang-Dong Kim ◽  
Masakiyo Matsumura
Keyword(s):  
Laser Crystallization ◽  
Hole Conduction ◽  
Electron Field ◽  
In Situ Crystallization ◽  
Excimer Laser Crystallization ◽  
Doping Technique ◽  
Amorphous Si ◽  
Dopant Atoms ◽  
Si Films

AbstractA novel technique has been proposed for selective and in -situ excimer-laser crystallization and doping to thin poly-Si films. Dopant atoms are supplied, during the Si laser crystallization process, to the Si film on glass from the doped SOG (spin-on-glass) film coated on the top. Conductivity of the processed film was increased to more than 10S/cm from about 10−8S/cm of the starting film. This technique has been applied to the bottom gate amorphous-Si TFTs with self-aligned poly-Si source and drain. The electron field-effect mobility was 1.0cm2/Vs and the on/off current ratio was more than 106. No parasitic effects were observed, and the hole conduction was effectively. This in-situ crystallization and doping technique can also be applied to the top gate a-Si TFT process.

In-Situ Crystallization and Doping of a-Si film by means of Spin-On-Glass

1994 ◽  
Vol 336 ◽  
Author(s):  
Tomoyuki Sakoda ◽  
Chang-Dong Kim ◽  
Masakiyo Matsumura
Keyword(s):  
Laser Crystallization ◽  
Hole Conduction ◽  
Electron Field ◽  
In Situ Crystallization ◽  
Excimer Laser Crystallization ◽  
Doping Technique ◽  
Amorphous Si ◽  
Dopant Atoms ◽  
Si Films

ABSTRACTA novel technique has been proposed for selective and in-situ excimer-laser crystallization and doping to thin poly-Si films. Dopant atoms are supplied, during the Si laser crystallization process, to the Si film on glass from the doped SOG (spin-on-glass) film coated on the top. Conductivity of the processed film was increased to more than 10S/cm from about 10−8S/cm of the starting film. This technique has been applied to the bottom gate Amorphous-Si TFTs with self-aligned poly-Si source and drain. The electron field-effect mobility was 1.0cm2/Vs and the on/off current ratio was more than 106. No parasitic effects were observed, and the hole conduction was effectively suppressed. This in-situ crystallization and doping technique can also be applied to the top gate a-Si TFT process.

Er3+-Doped Silicon Prepared by Laser Doping

1993 ◽  
Vol 301 ◽  
Author(s):  
T. Asatsuma ◽  
P. Dodd ◽  
J. F. Donegan ◽  
J. G. Lunney ◽  
J. Hegarty
Keyword(s):  
Rare Earth ◽  
Pulsed Laser ◽  
Earth Metal ◽  
Optically Active ◽  
Rare Earth Ions ◽  
Molten Layer ◽  
Laser Doping ◽  
Doped Silicon ◽  
Preliminary Study ◽  
The Rare Earth

ABSTRACTWe have carried out an investigation of the laser doping of Si with rare-earth ions. In this technique a silicon surface coated with a thin layer of the rare-earth metal is melted with a pulsed laser, the dopant is mixed in the molten layer, and incorporated in the crystal during regrowth. Er was chosen for the main part of our work as it is the best characterized of the rare-earth ions in Si. Luminescence is observed around 1.54µm and is assigned to optical transitions on Er3+ ions. This preliminary study shows that this new technique is viable for the production of optically active Er3+ in Si.

Fabrication of Heavily-Doped Polycrystalline Silicon Film Using a Laser-Doping Technique

1987 ◽  
Vol 26 (Part 2, No. 10) ◽  
pp. L1678-L1680 ◽  
Author(s):  
Toshiyuki Sameshima ◽  
Setsuo Usui ◽  
Hisashi Tomita
Keyword(s):  
Polycrystalline Silicon ◽  
Silicon Film ◽  
Laser Doping ◽  
Heavily Doped ◽  
Doping Technique ◽  
Polycrystalline Silicon Film

Preparation of integrated circuits for TEM electromigration in situ studies

1986 ◽  
Vol 44 ◽  
pp. 882-883
Author(s):  
J. V. Maskowitz ◽  
W. E. Rhoden ◽  
D. R. Kitchen ◽  
R. E. Omlor ◽  
P. F. Lloyd
Keyword(s):  
Integrated Circuits ◽  
Crystallographic Orientation ◽  
Silicon Wafers ◽  
Minimum Size ◽  
Test Vehicle ◽  
In Situ Studies ◽  
Boron Doped ◽  
Doped Silicon ◽  
Drill Holes

The fabrication of the aluminum bridge test vehicle for use in the crystallographic studies of electromigration involves several photolithographic processes, some common, while others quite unique. It is most important to start with a clean wafer of known orientation. The wafers used are 7 mil thick boron doped silicon. The diameter of the wafer is 1.5 inches with a resistivity of 10-20 ohm-cm. The crystallographic orientation is (111).Initial attempts were made to both drill and laser holes in the silicon wafers then back fill with photoresist or mounting wax. A diamond tipped dentist burr was used to successfully drill holes in the wafer. This proved unacceptable in that the perimeter of the hole was cracked and chipped. Additionally, the minimum size hole realizable was > 300 μm. The drilled holes could not be arrayed on the wafer to any extent because the wafer would not stand up to the stress of multiple drilling.

In situ deposition of ErNi2B2C films by pulsed laser ablation technique

1998 ◽  
Vol 299 (1-2) ◽  
pp. 15-22 ◽  
Author(s):  
A Canesi ◽  
M.R Cimberle ◽  
C Ferdeghini ◽  
A Diaspro ◽  
P Guasconi ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Ablation Technique ◽  
In Situ Deposition ◽  
Laser Ablation Technique
Sign in / Sign up

Export Citation Format

Share Document