scholarly journals Characterization of B and N Implanted Fused Silica

1989 ◽  
Vol 157 ◽  
Author(s):  
G. W. Arnold ◽  
R. K. Brow ◽  
M. J. Carr ◽  
J. C. Barbour
Keyword(s):  
Refractive Index ◽  
Oxygen Vacancy ◽  
Optoelectronic Devices ◽  
Fused Silica ◽  
Vacancy Defects ◽  
Implantation Damage

ABSTRACTThe implantation of B and N into fused silica can result in chemical incorporation into the glass with a consequent larger increase in refractive index than is possible due to volume compaction alone. B implantation produces anomalously large concentrations of oxygen-vacancy defects which aid in the establishment of B into a borosilicate layer. N implants can result in unreacted N accumulations in addition to N incorporated into a Si-oxynitride layer. The unreacted N can also be incorporated by implantation damage (e.g., Si, Ar, Kr)--before or after N implantation--which provides additional occupancy sites. These results are important with respect to the use of implantation-produced waveguides for optoelectronic devices.

scholarly journals Characterization Of Physically Vapor Deposited Af2400 Thin Films

1993 ◽  
Vol 328 ◽  
Author(s):  
R. Chow ◽  
M. K. Spragge ◽  
G. E. Loomis ◽  
F. Rainer ◽  
R. L. Ward ◽  
...  
Keyword(s):  
Refractive Index ◽  
Morphological Changes ◽  
Amorphous Polymer ◽  
Lawrence Livermore National Laboratory ◽  
National Laboratory ◽  
Fused Silica ◽  
Deposition Parameters ◽  
Temperature Scanning ◽  
Normal Laboratory

ABSTRACTAnti-reflective optical coatings made with Teflon AF2400 had the highest laser damage thresholds recorded for physical vapor deposited coatings at the Lawrence Livermore National Laboratory damage facility. Physical vapor deposited layers of Teflon AF2400, a perfluorinated amorphous polymer, Maintained the bulk optical properties of a high transmittance from 200 nm to 1200 nm, and a low refractive index. In addition, the refractive index can be intentionally reduced by control of two common deposition parameters, deposition rate and substrate temperature. Scanning electron microscopy and nuclear magnetic resonance observations indicated that morphological changes caused the variations in the refractive index rather than compositional changes. The coatings adhered to fused silica and silicon wafers under normal laboratory handling conditions.

TEM characterization of proton-exchanged LiNbO3 optical waveguides

1986 ◽  
Vol 44 ◽  
pp. 480-481
Author(s):  
W. E. Lee
Keyword(s):  
Refractive Index ◽  
Benzoic Acid ◽  
Optical Waveguides ◽  
Total Internal Reflection ◽  
Index Of Refraction ◽  
Optical Measurements ◽  
Lithium Ions ◽  
Wide Channel ◽  
Tem Characterization

An optical waveguide consists of a several-micron wide channel with a slightly different index of refraction than the host substrate; light can be trapped in the channel by total internal reflection.Optical waveguides can be formed from single-crystal LiNbO3 using the proton exhange technique. In this technique, polished specimens are masked with polycrystal1ine chromium in such a way as to leave 3-13 μm wide channels. These are held in benzoic acid at 249°C for 5 minutes allowing protons to exchange for lithium ions within the channels causing an increase in the refractive index of the channel and creating the waveguide. Unfortunately, optical measurements often reveal a loss in waveguiding ability up to several weeks after exchange.

Preparation and Characterization of Polyvinylidene Fluoride/ZrO2-TiO2 Optical Film with Wide Band Gap and High Refractive Index

2013 ◽  
Vol 28 (6) ◽  
pp. 671-676 ◽  
Author(s):  
Yu-Qing ZHANG ◽  
Li-Li ZHAO ◽  
Shi-Long XU ◽  
Chao ZHANG ◽  
Xiao-Ying CHEN ◽  
...  
Keyword(s):  
Refractive Index ◽  
Band Gap ◽  
Polyvinylidene Fluoride ◽  
Wide Band ◽  
High Refractive Index ◽  
Wide Band Gap ◽  
Optical Film

scholarly journals Synthesis and characterization of silica–lead sulfide core–shell nanospheres for applications in optoelectronic devices

2021 ◽  
Author(s):  
A. K. Romero-Jaime ◽  
M. C. Acosta-Enríquez ◽  
D. Vargas-Hernández ◽  
J. C. Tánori-Córdova ◽  
H. A. Pineda León ◽  
...  
Keyword(s):  
Lead Sulfide ◽  
Optoelectronic Devices ◽  
Synthesis And Characterization ◽  
Core Shell

scholarly journals Charge-Transfer Induced by the Oxygen Vacancy Defects in the Ag/MoO3 Composite System

Nanomaterials ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 1292
Author(s):  
Qi Chu ◽  
Jingmeng Li ◽  
Sila Jin ◽  
Shuang Guo ◽  
Eungyeong Park ◽  
...  
Keyword(s):  
Charge Transfer ◽  
Oxygen Vacancy ◽  
Composite System ◽  
Wide Band ◽  
Utilization Rate ◽  
Wide Band Gap ◽  
Interesting Phenomenon ◽  
Vacancy Defects ◽  
Characterization Methods ◽  
Surface Enhanced Raman

In this paper, an Ag/MoO3 composite system was cosputtered by Ar plasma bombardment on a polystyrene (PS) colloidal microsphere array. The MoO3 formed by this method contained abundant oxygen vacancy defects, which provided a channel for charge transfer in the system and compensated for the wide band gap of MoO3. Various characterization methods strongly demonstrated the existence of oxygen vacancy defects and detected the properties of oxygen vacancies. 4-Aminothiophenol (p-aminothiophenol, PATP) was used as a candidate surface-enhanced Raman scattering (SERS) probe molecule to evaluate the contribution of the oxygen vacancy defects in the Ag/MoO3 composite system. Interestingly, oxygen vacancy defects are a kind of charge channel, and their powerful effect is fully reflected in their SERS spectra. Increasing the number of charge channels and increasing the utilization rate of the channels caused the frequency of SERS characteristic peaks to shift. This interesting phenomenon opens up a new horizon for the study of SERS in oxygen-containing semiconductors and provides a powerful reference for the study of PATP.

scholarly journals MOVPE Growth of Quaternary (Al,Ga,In)N for UV Optoelectronics

2000 ◽  
Vol 5 (S1) ◽  
pp. 412-424
Author(s):  
Jung Han ◽  
Jeffrey J. Figiel ◽  
Gary A. Petersen ◽  
Samuel M. Myers ◽  
Mary H. Crawford ◽  
...  
Keyword(s):  
Room Temperature ◽  
Rutherford Backscattering Spectrometry ◽  
Optoelectronic Devices ◽  
Lattice Parameter ◽  
X Ray Diffraction ◽  
X Ray ◽  
Peak Energy ◽  
Movpe Growth ◽  
Pl Emission

We report the growth and characterization of quaternary AlGaInN. A combination of photoluminescence (PL), high-resolution x-ray diffraction (XRD), and Rutherford backscattering spectrometry (RBS) characterizations enables us to explore the contours of constant- PL peak energy and lattice parameter as functions of the quaternary compositions. The observation of room temperature PL emission at 351nm (with 20% Al and 5% In) renders initial evidence that the quaternary could be used to provide confinement for GaInN (and possibly GaN). AlGaInN/GaInN MQW heterostructures have been grown; both XRD and PL measurements suggest the possibility of incorporating this quaternary into optoelectronic devices.

Identification and characterization of defects produced in irradiated fused silica through molecular dynamics

2007 ◽  
Vol 367-370 ◽  
pp. 344-349 ◽  
Author(s):  
F. Mota ◽  
M.-J. Caturla ◽  
J.M. Perlado ◽  
A. Ibarra ◽  
M. León ◽  
...  
Keyword(s):  
Molecular Dynamics ◽  
Fused Silica ◽  
Identification And Characterization

Oxygen vacancy defects in Ta2O5 showing long-range atomic re-arrangements

2014 ◽  
Vol 104 (11) ◽  
pp. 112906 ◽  
Author(s):  
Yuzheng Guo ◽  
John Robertson
Keyword(s):  
Oxygen Vacancy ◽  
Long Range ◽  
Vacancy Defects

Pulsed 157 nm VUV induced refractive index modification of optical fibres and planar fused silica

2002 ◽  
Vol 186 (1-4) ◽  
pp. 583-587 ◽  
Author(s):  
P.E. Dyer ◽  
A.-M. Johnson ◽  
H.V. Snelling ◽  
C.D. Walton
Keyword(s):  
Refractive Index ◽  
Fused Silica ◽  
Optical Fibres
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