Applications of Sims to Spatially Modified Polymer Film Characterization

1989 ◽  
Vol 153 ◽  
Author(s):  
Richard W. Linton ◽  
Cheryl L. Judy ◽  
Susan G. Maybury ◽  
Sean F. Corcoran
Keyword(s):  
Mass Spectrometry ◽  
Metal Ion ◽  
Secondary Ion Mass Spectrometry ◽  
Conductive Polymer ◽  
Polymeric Materials ◽  
Primary Beam ◽  
Static Mode ◽  
Depth Profiles ◽  
Modified Polymer ◽  
Beam Damage

AbstractThe predominant application of secondary ion mass spectrometry (SIMS) to organic polymeric solids has been the molecular monolayer analysis of thin films in the “static” mode. The primary emphasis in this paper, however, is the evaluation of SIMS for two or three dimensional compositional mapping studie of spatially modified polymer. This often requires the use of the “dynamic” SIMS mode to provide lateral images, depth profiles, or 3-D image depth profiles. Selected applications are presented including SIMS studies of surface derivatized polymers, metal-doped conductive polymer films, and patterned polymeric materials or fibers. One analytical objective is to assess the extent to which compositional information is limited by primary beam damage. The outlook for SIMS instrumentation combining high lateral spatial resolution with minimal primary beam damage to surface molecules is summarized, for example the combination of microfocused liquid metal ion sources and time-of-flight mass spectrometry.

Applications of SIMS to Spatially Modified Polymer Film Characterization

1989 ◽  
Vol 154 ◽  
Author(s):  
Richard W. Linton ◽  
Cheryl L. Judy ◽  
Susan G. Maybury ◽  
Sean F. Corcoran
Keyword(s):  
Mass Spectrometry ◽  
Metal Ion ◽  
Secondary Ion Mass Spectrometry ◽  
Conductive Polymer ◽  
Three Dimensional ◽  
Polymeric Materials ◽  
Primary Beam ◽  
Static Mode ◽  
Depth Profiles ◽  
Beam Damage

AbstractThe predominant application of secondary ion mass spectrometry (SIMS) to organic polymeric solids has been the molecular monolayer analysis of thin films in the “static” mode. The primary emphasis in this paper, however, is the evaluation of SIMS for two or three-dimensional compositional mapping studies of spatially modified polymers. This often requires the use of the “dynamic” SIMS mode to provide lateral images, depth profiles, or 3-D image depth profiles. Selected applications are presented including SIMS studies of surface derivatized polymers, metal-doped conductive polymer films, and patterned polymeric materials or fibers. One analytical objective is to assess the extent to which compositional information is limited by primary beam damage. The outlook for SIMS instrumentation combining high lateral spatial resolution with minimal primary beam damage to surface molecules is summarized, for example the combination of microfocused liquid metal ion sources and time-of-flight mass spectrometry.

Effects of Cryogenic Sample Analysis on Molecular Depth Profiles with TOF-Secondary Ion Mass Spectrometry

2010 ◽  
Vol 82 (19) ◽  
pp. 8291-8299 ◽  
Author(s):  
Alan M. Piwowar ◽  
John S. Fletcher ◽  
Jeanette Kordys ◽  
Nicholas P. Lockyer ◽  
Nicholas Winograd ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Secondary Ion Mass Spectrometry ◽  
Sample Analysis ◽  
Depth Profiles ◽  
Ion Mass Spectrometry ◽  
Secondary Ion

Quantitation of Secondary Ion Mass Spectrometry (SIMS) for HgCdTe.

1983 ◽  
Vol 25 ◽  
Author(s):  
Lawrence E. Lapides ◽  
George L. Whiteman ◽  
Robert G. Wilson
Keyword(s):  
Mass Spectrometry ◽  
Ion Implantation ◽  
Ionization Potential ◽  
Electron Affinity ◽  
Secondary Ion Mass Spectrometry ◽  
Relative Sensitivity ◽  
Depth Profiles ◽  
Ion Mass Spectrometry ◽  
Sensitivity Factors ◽  
Secondary Ion

ABSTRACTQuantitative depth profiles of impurities in LPE layers of HgCdTe have been determined using relative sensitivity factors calculated from ion implantation profiles. Standards were provided for Li, Be, B, C, F, Na, Mg, Al, Si, P, S, Cl, Cu, Ga, As, Br, and In. Relative sensitivity factors as a function of ionization potential for O2+ primary ion SIMS and electron affinity for Cs+ primary ion SIMS have been calculated in order to extend quantitation to elements not yet implanted. Examples of depth profiles for implant standards and unimplanted layers are given.

Dissociation of Deuterium-Defect Complexes in Ion-Implanted Epitaxial 4H-SiC

1998 ◽  
Vol 513 ◽  
Author(s):  
M. Janson ◽  
M. K. Linnarsson ◽  
A. Hallén ◽  
B. G. Svensson
Keyword(s):  
Experimental Data ◽  
Mass Spectrometry ◽  
Monte Carlo ◽  
Depth Distribution ◽  
Secondary Ion Mass Spectrometry ◽  
Depth Profiles ◽  
Defect Complexes ◽  
Induced Defects ◽  
Secondary Ion ◽  
Anneal Time

ABSTRACTEpitaxial layers of low doped 4H-SiC are implanted with 20 keV 2H+ ions to a dose of 1×1015 cm−2. The samples are subsequently annealed at temperatures ranging from 1040 to 1135 °C. Secondary ion mass spectrometry is used to obtain the concentration versus depth profiles of the atomic deuterium in the samples. It is found that the concentration of implanted deuterium decreases rapidly in the samples as a function of anneal time.The experimental data are explained by a model where the deuterium migrates rapidly and becomes trapped and de-trapped at implantation-induced defects which exhibit a slightly shallower depth distribution than the implanted deuterium ions. Computer simulations using this model, in which the damage profile is taken from Monte Carlo simulations and the surface is treated as a perfect sink for the diffusing deuterium atoms, are performed with good results compared to the experimental data. The complexes are tentatively identified as carbon-deuterium at a Si-vacancy and a dissociation energy (ED) of approximately 4.9 eV is extracted for the deuterium-vacancy complexes.

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