Magnetic Microstructure of Thin Films and Surfaces: Exploiting Spin-Polarized Electrons in the SEM and STM

1989 ◽  
Vol 151 ◽  
Author(s):  
D. T. Pierce ◽  
M. R. Scheinfein ◽  
J. Unguris ◽  
R. J. Celotta
Keyword(s):  
Sample Preparation ◽  
Domain Walls ◽  
Domain Boundary ◽  
Physical Structure ◽  
Information Storage ◽  
Polarized Electrons ◽  
Fundamental Interest ◽  
Magnetic Microstructure ◽  
Spin Polarized ◽  
Device Applications

ABSTRACTMagnetic microstructure, that is the configuration of domains and domain walls in a magnetic material, is of both fundamental interest and of crucial importance for device applications. For example, the ultimate density of magnetic information storage is limited by the sharpness of a domain boundary. The magnetic microstructure of a thin film or surface depends sensitively on its physical structure which is strongly affected by sample preparation or growth. High resolution magnetization imaging is necessary to determine the domain configuration that occurs for a particular sample preparation and the changes that take place under external perturbations such as applied magnetic field, stress or temperature.

Three-Dimensional Optical Analysis of Ferroelectric Domain Walls

Domain Walls ◽  
2020 ◽  
pp. 152-184
Author(s):  
A. Haußmann ◽  
L. M. Eng ◽  
S. Cherifi-Hertel
Keyword(s):  
Physical Properties ◽  
Domain Walls ◽  
Domain Boundary ◽  
Three Dimensional ◽  
Ferroelectric Domain ◽  
Ferroelectric Materials ◽  
Optical Methods ◽  
Fundamental Interest ◽  
Nanoscale Interfaces ◽  
3D Profile

This chapter presents the latest results demonstrating the flexibility and sensitivity of optical methods for the investigation of the physical properties of DWs in 3D. Domain walls in ferroelectric materials are nanoscale interfaces separating regions with different orientation of the polarization. They have long been considered as imperfections affecting the overall macroscopic properties of ferroelectrics. However, the recently discovered rich and diverse local physical properties of ferroelectric DWs have transformed these domain boundary regions into individual nanostructures with significant fundamental interest and potentially viable application in nanoelectronic device components. This chapter emphasizes the important contribution of both nonlinear and linear optical microscopy in different geometries (transmission, reflection, and non-collinear geometry) to access the detailed morphology of ferroelectric domain walls, obtain their 3D profile, access their internal structure, and establish correlations with their electronic properties.

scholarly journals Magnetoelectric Coupling in Bismuth Ferrite—Challenges and Perspectives

Coatings ◽  
2020 ◽  
Vol 10 (12) ◽  
pp. 1221
Author(s):  
Srihari N. V. ◽  
K. B. Vinayakumar ◽  
K. K. Nagaraja
Keyword(s):  
Electric Fields ◽  
Bismuth Ferrite ◽  
Magnetoelectric Coupling ◽  
Magnetic Memory ◽  
Multiferroic Materials ◽  
Electric Voltage ◽  
Polarized Electrons ◽  
Spintronic Devices ◽  
Spin Polarized ◽  
Device Applications

Multiferroic materials belong to the sub-group of ferroics possessing two or more ferroic orders in the same phase. Aizu first coined the term multiferroics in 1969. Of late, several multiferroic materials’ unique and robust characteristics have shown great potential for various applications. Notably, the coexisting magnetic and electrical ordering results in the Magnetoelectric effect (ME), wherein the electrical polarization can be manipulated by magnetic fields and magnetization by electric fields. Currently, more significant interests lie in significantly enhancing the ME coupling facilitating the realization of Spintronic devices, which makes use of the transport phenomenon of spin-polarized electrons. On the other hand, the magnetoelectric coupling is also pivotal in magnetic memory devices wherein the application of small electric voltage manipulates the magnetic properties of the device. This review gives a brief overview of magnetoelectric coupling in Bismuth ferrite and approaches to achieve higher magnetoelectric coupling and device applications.

Introduction to Domain Boundary Engineering

Domain Walls ◽  
2020 ◽  
pp. 109-128
Author(s):  
E. K. H. Salje ◽  
G. Lu
Keyword(s):  
Domain Walls ◽  
Bulk Material ◽  
Domain Boundary ◽  
Functional Domain ◽  
The Novel ◽  
Antiphase Boundaries ◽  
Twin Boundaries ◽  
Domain Boundaries ◽  
Device Applications ◽  
Bloch Lines

This chapter introduces research on functional domain boundaries. Ever since the discovery of superconducting twin boundaries in the 1990s, highly conducting, polar, photovoltaic, magnetic, and so on, domain boundaries have been discovered while the same bulk material displays none of these properties. Domain boundaries constitute planar templates for device applications with thicknesses of ca. 1 nm. Domains within domains are then the next step in miniaturization with Bloch lines within domain walls and Bloch points between Bloch lines. In the overwhelming majority of cases, the geometrical template for the functional domain boundaries stems from the ferroelastic domain structure, while antiphase boundaries are equally potential template providers. Complex structures are a particular case because they add vortices and skyrmions to the template topology. Correlations between such sub-structures maintain features like polarity and piezoelectricity in randomized samples where structural averages would not allow macroscopic polar effects. The dynamics of the change of functionality is often much faster than the speed with which twin boundaries move. The novel information carrier is the kink inside twin walls, which moves with supersonic speed.

SURFACE AND THIN FILM MAGNETISM WITH SPIN POLARIZED ELECTRONS

1988 ◽  
Vol 49 (C8) ◽  
pp. C8-9-C8-16 ◽  
Author(s):  
H. C. Siegmann ◽  
D. Mauri ◽  
D. Scholl ◽  
E. Kay
Keyword(s):  
Thin Film ◽  
Polarized Electrons ◽  
Spin Polarized ◽  
Thin Film Magnetism

scholarly journals Spin-Polarized Electrons from Autoionizing Transitions in Thallium

1975 ◽  
Vol 34 (11) ◽  
pp. 710-710 ◽  
Author(s):  
U. Heinzmann ◽  
H. Heuer ◽  
J. Kessler
Keyword(s):  
Polarized Electrons ◽  
Spin Polarized

scholarly journals Shot noise and spin-orbit coherent control of entangled and spin-polarized electrons

2005 ◽  
Vol 72 (23) ◽  
Author(s):  
J. Carlos Egues ◽  
Guido Burkard ◽  
D. S. Saraga ◽  
John Schliemann ◽  
Daniel Loss
Keyword(s):  
Shot Noise ◽  
Coherent Control ◽  
Spin Orbit ◽  
Polarized Electrons ◽  
Spin Polarized

scholarly journals Information storage in permalloy modulated magnetic nanowires

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Guidobeth Sáez ◽  
Pablo Díaz ◽  
Eduardo Cisternas ◽  
Eugenio E. Vogel ◽  
Juan Escrig
Keyword(s):  
Magnetic Material ◽  
Phase Diagram ◽  
Magnetic Fields ◽  
Domain Walls ◽  
Wire Diameter ◽  
Information Storage ◽  
Magnetic Nanowires ◽  
The Wire ◽  
The Stability ◽  
Cylindrical Wire

AbstractA long piece of magnetic material shaped as a central cylindrical wire (diameter $$d=50$$ d = 50 nm) with two wider coaxial cylindrical portions (diameter $$D=90$$ D = 90 nm and thickness $$t=100$$ t = 100 nm) defines a bimodulated nanowire. Micromagnetism is invoked to study the equilibrium energy of the system under the variations of the positions of the modulations along the wire. The system can be thought of as composed of five independent elements (3 segments and 2 modulations) leading to $$2^5=32$$ 2 5 = 32 possible different magnetic configurations, which will be later simplified to 4. We investigate the stability of the configurations depending on the positions of the modulations. The relative chirality of the modulations has negligible contributions to the energy and they have no effect on the stability of the stored configuration. However, the modulations are extremely important in pinning the domain walls that lead to consider each segment as independent from the rest. A phase diagram reporting the stability of the inscribed magnetic configurations is produced. The stability of the system was then tested under the action of external magnetic fields and it was found that more than 50 mT are necessary to alter the inscribed information. The main purpose of this paper is to find whether a prototype like this can be complemented to be used as a magnetic key or to store information in the form of firmware. Present results indicate that both possibilities are feasible.

Scanning tunneling microscopy with spin-polarized electrons

1990 ◽  
Vol 80 (1) ◽  
pp. 5-6 ◽  
Author(s):  
R. Wiesendanger ◽  
H. J. G�ntherodt ◽  
G. G�ntherodt ◽  
R. J. Gambino ◽  
R. Ruf
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Polarized Electrons ◽  
Spin Polarized
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