Exchange Anisotropy in Amorphous/Microcrystalline Co-Gd Films

1989 ◽  
Vol 151 ◽  
Author(s):  
A. M. Toxen ◽  
A. Hopkins ◽  
S. B. Hagstrom ◽  
R. M. White
Keyword(s):  
High Temperature ◽  
Composition Range ◽  
Metastable Phase ◽  
Characteristic Size ◽  
Crystalline Material ◽  
X Ray Diffraction ◽  
Broad Ring ◽  
X Ray ◽  
Sapphire Substrates ◽  
Microcrystalline Material

ABSTRACTMagnetization, TEM, and x-ray diffraction studies have been carried out on GdCox films sputtered onto Si or sapphire substrates at ˜90 C, ambient temperature. The composition range studied was x=2−8.5. Over the composition range defined approximately by 5>×>3, the films, which are 1–3 microns thick, exhibit a unidirectionally displaced B-H loop, characteristic of an exchange-biased phase. TEM studies indicated that the samples with the shifted loops indeed consist of a mixture of amorphous and microcrystalline phases. The characteristic size of the microstructure is 10–20 A. Electron diffraction shows a very broad ring characteristic of amorphous phase together with six or seven sharper rings characteristic of crystalline material which index best to the hexagonal GdCo5 structure or to a high temperature hexagonal Gd2Co17 phase. The diffraction pattern remains virtually unchanged over the composition range x=2–8. This leads us to conclude that the microcrystalline material consists of one, or perhaps more than one, metastable phase over the indicated composition range. X-ray diffraction shows only one broad maximum.

Experimental Considerations and Limitations in the Application of Ultra High Temperature (2100°C) X-Ray Diffraction

1991 ◽  
Vol 35 (A) ◽  
pp. 425-429
Author(s):  
Sampath S. Iyengar
Keyword(s):  
High Temperature ◽  
Crystalline Material ◽  
Thermal Treatments ◽  
Ceramic Fibers ◽  
X Ray Diffraction ◽  
X Ray ◽  
Controlled Atmospheres ◽  
Heat Treated ◽  
Multiple Samples

In-situ, high temperature X-ray diffraction (XRD) is an extremely useful tool for studying, monitoring or investigating crystal structure modifications as well as phase transformations in crystalline material during thermal treatments in controlled atmospheres. This technique has been used to investigate the thermal behavior of materials such as carbonate minerals, ceramic fibers, coating pigments, etc. The advantages of such a technique over the conventional practice, where samples are heat treated in a separate oven and then analyzed by XRD include: consistency of sample placement; preservation of high temperature structures to facilitate observation of metastable phases that are unstable upon exposure to outside atmosphere or during cooling; real time monitoring of reactions that occur, and products that are formed at a desired temperature or environment; and need for multiple samples or analysis.

In situ high-temperature X-ray diffraction studies of reduction of K2CrO4 and the formation of KxCrOy compounds

2017 ◽  
Vol 32 (3) ◽  
pp. 168-174 ◽  
Author(s):  
Shu-ting Liang ◽  
Hong-ling Zhang ◽  
Min-ting Luo ◽  
Yu-lan Bai ◽  
Hong-bin Xu ◽  
...  
Keyword(s):  
Fourier Transform ◽  
High Temperature ◽  
Hydrogen Reduction ◽  
Potassium Chromate ◽  
Crystalline Material ◽  
Reduction Mechanism ◽  
X Ray Diffraction ◽  
X Ray ◽  
First Time

In this work, the reduction mechanism of potassium chromate (K2CrO4) was investigated via in situ high-temperature X-ray diffraction coupled with Fourier transform infrared spectroscopy. During the hydrogen reduction of K2CrO4, the formation of K3CrO4, KCrO2, and KxCrO2 were detected for the first time. The study discovered that K2CrO4 was firstly reduced to K3CrO4 and an amorphous Cr(III) intermediate product at low temperature (400–500 °C). Moreover, the K3CrO4 was the only crystalline material at this stage. As the temperature increased, a stabilized amorphous CrOOH was formed. At a high temperature (550–700 °C), KCrO2 was generated. Interestingly, a portion of KCrO2 was spontaneously decomposed during the hydrogen reduction, accompanying by the formation of K0.7CrO2. Finally, the results clearly illustrated the reduction mechanism of K2CrO4: K2CrO4 → K3CrO4 → amorphous intermediate → KCrO2.

High temperature X-ray diffraction investigation of an aluminium-silicon-corundum system

2007 ◽  
Vol 2007 (suppl_26) ◽  
pp. 369-374 ◽  
Author(s):  
D. Garipoli ◽  
P. Bergese ◽  
E. Bontempi ◽  
M. Minicucci ◽  
A. Di Cicco ◽  
...  
Keyword(s):  
High Temperature ◽  
X Ray Diffraction ◽  
X Ray

scholarly journals High-pressure synthesis and crystal structure of the mixed-cation borate Ga4In4B15O33(OH)3

2019 ◽  
Vol 74 (4) ◽  
pp. 357-363
Author(s):  
Daniela Vitzthum ◽  
Hubert Huppertz
Keyword(s):  
Crystal Structure ◽  
High Pressure ◽  
High Temperature ◽  
Diffraction Data ◽  
X Ray Diffraction ◽  
Synthesis And Crystal Structure ◽  
X Ray ◽  
Mixed Cation ◽  
High Pressure High Temperature ◽  
Pressure Synthesis

AbstractThe mixed cation triel borate Ga4In4B15O33(OH)3 was synthesized in a Walker-type multianvil apparatus at high-pressure/high-temperature conditions of 12.5 GPa and 1300°C. Although the product could not be reproduced in further experiments, its crystal structure could be reliably determined via single-crystal X-ray diffraction data. Ga4In4B15O33(OH)3 crystallizes in the tetragonal space group I41/a (origin choice 2) with the lattice parameters a = 11.382(2), c = 15.244(2) Å, and V = 1974.9(4) Å3. The structure of the quaternary triel borate consists of a complex network of BO4 tetrahedra, edge-sharing InO6 octahedra in dinuclear units, and very dense edge-sharing GaO6 octahedra in tetranuclear units.

The Application of X-Ray Diffraction at Elevated Temperatures to Study the Mechanism of Formation of Sodium Tripolyphosphate

1961 ◽  
Vol 5 ◽  
pp. 276-284
Author(s):  
E. L. Moore ◽  
J. S. Metcalf
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Amorphous Phase ◽  
Elevated Temperatures ◽  
Sodium Tripolyphosphate ◽  
X Ray Diffraction ◽  
Mechanism Of Formation ◽  
X Ray ◽  
Temperature Form ◽  
High Temperature Form

AbstractHigh-temperature X-ray diffraction techniques were employed to study the condensation reactions which occur when sodium orthophosphates are heated to 380°C. Crystalline Na4P2O7 and an amorphous phase were formed first from an equimolar mixture of Na2HPO4·NaH2PO4 and Na2HPO4 at temperatures above 150°C. Further heating resulted in the formation of Na5P3O10-I (high-temperature form) at the expense of the crystalline Na4P4O7 and amorphous phase. Crystalline Na5P3O10-II (low-temperature form) appears after Na5P3O10-I.Conditions which affect the yield of crystalline Na4P2O7 and amorphous phase as intermediates and their effect on the yield of Na5P3O10 are also presented.

Mechanical Alloying Behavior in the Nb-Si, Ta-Si, and Nb-Ta-Si Systems

1988 ◽  
Vol 133 ◽  
Author(s):  
K. S. Kumar ◽  
S. K. Mannan
Keyword(s):  
High Temperature ◽  
Mechanical Alloying ◽  
Mechanical Milling ◽  
Room Temperature ◽  
Crystalline Compound ◽  
X Ray Diffraction ◽  
X Ray ◽  
Β Phase ◽  
Α Phase

ABSTRACTThe mechanical alloying behavior of elemental powders in the Nb-Si, Ta-Si, and Nb-Ta-Si systems was examined via X-ray diffraction. The line compounds NbSi2 and TaSi2 form as crystalline compounds rather than amorphous products, but Nb5Si3 and Ta5Si3, although chemically analogous, respond very differently to mechanical milling. The Ta5Si3 composition goes directly from elemental powders to an amorphous product, whereas Nb5Si3 forms as a crystalline compound. The Nb5Si3 compound consists of both the tetragonal room-temperature α phase (c/a = 1.8) and the tetragonal high-temperature β phase (c/a = 0.5). Substituting increasing amounts of Ta for Nb in Nb5Si3 initially stabilizes the α-Nb5Si3 structure preferentially, and subsequently inhibits the formation of a crystalline compound.

scholarly journals Stable and Metastable Phase Equilibria Involving the Cu6Sn5 Intermetallic

2021 ◽  
Author(s):  
A. Leineweber ◽  
M. Löffler ◽  
S. Martin
Keyword(s):  
Phase Equilibria ◽  
Electron Backscatter Diffraction ◽  
Metastable Phase ◽  
Stable Phase ◽  
X Ray Diffraction ◽  
X Ray ◽  
Heat Treated ◽  
Ordered Phases ◽  
Backscatter Diffraction ◽  
Kinetics Of

Abstract Cu6Sn5 intermetallic occurs in the form of differently ordered phases η, η′ and η′′. In solder joints, this intermetallic can undergo changes in composition and the state of order without or while interacting with excess Cu and excess Sn in the system, potentially giving rise to detrimental changes in the mechanical properties of the solder. In order to study such processes in fundamental detail and to get more detailed information about the metastable and stable phase equilibria, model alloys consisting of Cu3Sn + Cu6Sn5 as well as Cu6Sn5 + Sn-rich melt were heat treated. Powder x-ray diffraction and scanning electron microscopy supplemented by electron backscatter diffraction were used to investigate the structural and microstructural changes. It was shown that Sn-poor η can increase its Sn content by Cu3Sn precipitation at grain boundaries or by uptake of Sn from the Sn-rich melt. From the kinetics of the former process at 513 K and the grain size of the η phase, we obtained an interdiffusion coefficient in η of (3 ± 1) × 10−16 m2 s−1. Comparison of this value with literature data implies that this value reflects pure volume (inter)diffusion, while Cu6Sn5 growth at low temperature is typically strongly influenced by grain-boundary diffusion. These investigations also confirm that η′′ forming below a composition-dependent transus temperature gradually enriches in Sn content, confirming that Sn-poor η′′ is metastable against decomposition into Cu3Sn and more Sn-rich η or (at lower temperatures) η′. Graphic Abstract

scholarly journals The impact of point defects in n-type GaN layers on thermal decomposition of InGaN/GaN QWs

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Mikolaj Grabowski ◽  
Ewa Grzanka ◽  
Szymon Grzanka ◽  
Artur Lachowski ◽  
Julita Smalc-Koziorowska ◽  
...  
Keyword(s):  
Quantum Wells ◽  
High Temperatures ◽  
Point Defects ◽  
X Ray Diffraction ◽  
Helium Ions ◽  
X Ray ◽  
Sapphire Substrates ◽  
Transmission Electron ◽  
The Impact ◽  
Ingan Quantum Wells

AbstractThe aim of this paper is to give an experimental evidence that point defects (most probably gallium vacancies) induce decomposition of InGaN quantum wells (QWs) at high temperatures. In the experiment performed, we implanted GaN:Si/sapphire substrates with helium ions in order to introduce a high density of point defects. Then, we grew InGaN QWs on such substrates at temperature of 730 °C, what caused elimination of most (but not all) of the implantation-induced point defects expanding the crystal lattice. The InGaN QWs were almost identical to those grown on unimplanted GaN substrates. In the next step of the experiment, we annealed samples grown on unimplanted and implanted GaN at temperatures of 900 °C, 920 °C and 940 °C for half an hour. The samples were examined using Photoluminescence, X-ray Diffraction and Transmission Electron Microscopy. We found out that the decomposition of InGaN QWs started at lower temperatures for the samples grown on the implanted GaN substrates what provides a strong experimental support that point defects play important role in InGaN decomposition at high temperatures.

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