On the Properties of Weakly Absorbing Highly Conductive SiC Thin Films Prepared in a TCDDC System

1989 ◽  
Vol 149 ◽  
Author(s):  
R. Martins ◽  
G. Willeke
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Optoelectronic Properties ◽  
Absorption Coefficients ◽  
Photoluminescence Studies ◽  
Structural And Optoelectronic Properties

ABSTRACTp- and n-type weakly absorbing highly conductive (σ>0.1(Ωcm)-1) SiC thin films with similar structural and optoelectronic properties have been prepared in a TCDDC reactor. These films contain Si microcrystals embedded in an amorphous Si:O:C:H matrix. C is preferentially incorporated as stoichiometric SiC, whereas O is present mainly as suboxide. Absorption coefficients smaller than cr-Si are observed for films containing about 20at% C and 25at% O. From diffraction studies there is no evidence for the presence of SiC crystallites. Photoluminescence studies show a peak at about 1.68eV, similar to gd a-SiC:H of comparable optical properties.

scholarly journals Tailoring of the Structural and Optoelectronic Properties of Zinc-Tin-Oxide Thin Films via Oxygenation Process for Solar Cell Application

IEEE Access ◽  
2020 ◽  
Vol 8 ◽  
pp. 193560-193568
Author(s):  
Mohammad Aminul Islam ◽  
Md. Khan Sobayel Bin Rafiq ◽  
Halina Misran ◽  
Md. Akhtar Uzzaman ◽  
Kuaanan Techato ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cell ◽  
Tin Oxide ◽  
Optoelectronic Properties ◽  
Oxide Thin Films ◽  
Solar Cell Application ◽  
Zinc Tin Oxide ◽  
Structural And Optoelectronic Properties

Effect of Nitridation and Buffer in GaN Films Grown on A-Plane (11-20) Sapphire

1997 ◽  
Vol 482 ◽  
Author(s):  
D. Doppalapudi ◽  
E. Iliopoulos ◽  
S. N. Basu ◽  
T. D. Moustakas
Keyword(s):  
Low Temperature ◽  
Systematic Study ◽  
Optoelectronic Properties ◽  
Pronounced Effect ◽  
Significant Fraction ◽  
Plasma Nitridation ◽  
Zinc Blende ◽  
Photoluminescence Studies ◽  
Structural And Optoelectronic Properties

AbstractIn this paper, we report on a systematic study of GaN growth on the A-plane sapphire by plasma-assisted MBE. The effects of plasma nitridation of the substrate and the growth of a low temperature GaN buffer on the structure and optoelectronic properties of the films are addressed. TEM studies indicate that films grown on substrates which were not nitridated prior to growth have a significant fraction of zinc-blende domains and poor orientational relation with the substrate. On the contrary, nitridation leads to films with superior structural and optoelectronic properties. The low temperature GaN buffer, grown on nitridated substrates, was found to also have a pronounced effect on the optoelectronic properties of the GaN films, especially in those with low carrier concentrations. The correlation between TEM and photoluminescence studies suggest that the transition at 3.27 eV can be attributed to the cubic domains in the films.

scholarly journals Synthesis and Characteristics of Zn-Doped CuCrO2 Transparent Conductive Thin Films

Coatings ◽  
2019 ◽  
Vol 9 (5) ◽  
pp. 321
Author(s):  
Ruei-Sung Yu ◽  
Chen Chu
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Optoelectronic Properties ◽  
Light Transmittance ◽  
Cross Sectional ◽  
Zinc Doping ◽  
Hall Effect Measurements ◽  
P Type ◽  
Conductive Thin Films ◽  
Structural And Optoelectronic Properties

The effects of doping a p-type CuCrO2 film with zinc on its structural and optoelectronic properties were investigated by experiments using CuCr1−xZnxO2 thin films (x = 0, 0.025, 0.065, 0.085). An increase in the amount of zinc dopant in the thin films affected the lattice constant and increased its Gibbs free energy of phase transformation. Cross-sectional images of the CuCrO2 thin film samples exhibited a dense polygonal microstructure and a surface morphology with protruding nanoscale granules. With the increase in the amount of Zn dopant, the surface roughness decreased, thereby increasing the amount of incident photons as well as the visible-light transmittance and ultraviolet-light absorption of the thin films. With the zinc doping in the CuCrO2 thin films, the band gap increased from 3.09 to 3.11 eV. The substitution of Cr3+ with Zn2+ forms hole carriers in the crystals, which was demonstrated by X-ray photoelectron spectroscopy and Hall effect measurements. The conductivities and carrier concentrations of the Zn-doped CuCrO2 thin films were greater than those of undoped CuCrO2. The CuCr1−xZnxO2 film (x = 0.065) exhibited the best optoelectronic properties; its carrier concentration and resistivity were 1.88 × 1017 cm−3 and 3.82 Ωcm, respectively.

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