Completely Integrated Contact-Type a-Si/a-SiC Heterojunction Image Sensor with Poly-Si TFT Drivers

1989 ◽  
Vol 149 ◽  
Author(s):  
Hajime Kurihara ◽  
Tetsuyoshi Takeshita ◽  
Shinji Morozumi

ABSTRACTThis paper describes the performance of both an 8 dots/mm and a 400 DPI contact-type linear image sensors which integrate poly-Si TFT scanning circuits and a-Si/a-SiC heterojunction photodiodes on the same substrate. Each of these image sensors provides excellent cost and performance for their applications. In particular, the 400 DPI image sensor has achieved a higher scanning speed of 1 msec/line by using the integrated scanning circuits with hydrogenated poly-Si TFTs having high carrier mobility.

2021 ◽  
Author(s):  
Hong-Cai Zhou ◽  
Yan Yue ◽  
Peiyu Cai ◽  
Xiaoyi Xu ◽  
Hanying Li ◽  
...  

2021 ◽  
Vol 60 (19) ◽  
pp. 10806-10813
Author(s):  
Yan Yue ◽  
Peiyu Cai ◽  
Xiaoyi Xu ◽  
Hanying Li ◽  
Hongzheng Chen ◽  
...  

2021 ◽  
Vol 9 (14) ◽  
pp. 4971-4977
Author(s):  
Mehmet Emin Kilic ◽  
Kwang-Ryeol Lee

Tetrahexagonal AlN: a novel two-dimensional family for photocatalytic water splitting with exceptional mechanical, electronic, and optical properties.


2021 ◽  
Author(s):  
Ruiming Lu ◽  
Alan Olvera ◽  
Trevor Bailey ◽  
Jiefei Fu ◽  
Xianli Su ◽  
...  

The integration within the same crystal lattice of two or more structurally and chemically distinct building units enables the design of complex materials featuring the coexistence of dissimilar functionalities. Here...


1990 ◽  
Vol 2 (12) ◽  
pp. 592-594 ◽  
Author(s):  
Francis Garnier ◽  
Gilles Horowitz ◽  
Xuezhou Peng ◽  
Denis Fichou

2013 ◽  
Vol 46 (28) ◽  
pp. 285303 ◽  
Author(s):  
I A Kotin ◽  
I V Antonova ◽  
A I Komonov ◽  
V A Seleznev ◽  
R A Soots ◽  
...  

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