Completely Integrated Contact-Type a-Si/a-SiC Heterojunction Image Sensor with Poly-Si TFT Drivers
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Type A
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ABSTRACTThis paper describes the performance of both an 8 dots/mm and a 400 DPI contact-type linear image sensors which integrate poly-Si TFT scanning circuits and a-Si/a-SiC heterojunction photodiodes on the same substrate. Each of these image sensors provides excellent cost and performance for their applications. In particular, the 400 DPI image sensor has achieved a higher scanning speed of 1 msec/line by using the integrated scanning circuits with hydrogenated poly-Si TFTs having high carrier mobility.
2012 ◽
Vol 182
(4)
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pp. 437
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2021 ◽
Vol 60
(19)
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pp. 10806-10813
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High carrier mobility in chemically modified graphene on an atomically flat high-resistive substrate
2013 ◽
Vol 46
(28)
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pp. 285303
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2022 ◽
Vol 264
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pp. 120309
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