EPR Studies of DX Center Related Paramagnetic States in Ga0.69 Al0.31 As:Sn

ABSTRACTThe electron paramagnetic resonance study of the DX center in Sn doped direct gap Ga0.69Al0.31 As shows the existence of a shallow effective mass like excited configuration of this defect. The photoexcitation spectrum for this transformation has a threshold at 0.8 eV; the photoionization of the DX center is not a transition to the lowest r conduction band as previously assumed. After photoexcitation additional paramagnetic defects are observed.