Si Ion Implantation in InAlAs/InGaAs Heterostructures

1989 ◽  
Vol 147 ◽  
Author(s):  
B. Descouts ◽  
N. Duhamel ◽  
E. V. K. Rao ◽  
Y. Gao ◽  
J. P. Praseuth
Keyword(s):  
Contact Resistivity ◽  
Electrical Parameters ◽  
Furnace Annealing ◽  
Conventional Furnace ◽  
Activation Efficiency ◽  
Specific Contact ◽  
Conventional Furnace Annealing ◽  
Specific Contact Resistivity ◽  
Good Homogeneity ◽  
Si Ion Implantation

AbstractSi29 implants have been performed in InGaAs and InAlAs single layers as well as in InGaAs/InAlAs heterostructures. Nearly 100% activation has been obtained in InGaAs after conventional furnace annealing or rapid thermal annealing. On the other hand, a low activation efficiency (30%) has been observed in InAlAs. A preliminary photoluminescence measurements study shows that an appreciable fraction of Si exists in the form of complex centers. Hall effect and specific contact resistivity maps carried out in the heterostructures indicate a very good homogeneity of the electrical parameters over a 4 cm2 sample and give a satisfactory value of the specific contact resistivity (10−7 ω.cm2)

Rapid Themal Annealing of Shallow. Diffused Contact Regions in GaAs

1985 ◽  
Vol 52 ◽  
Author(s):  
N. J. Kepler ◽  
N. W. Cheung ◽  
P. K. Chu
Keyword(s):  
Thin Film ◽  
Rapid Thermal Annealing ◽  
High Intensity ◽  
Ohmic Contacts ◽  
Diffusion Profile ◽  
Furnace Annealing ◽  
Conventional Furnace ◽  
Specific Contact ◽  
Heavily Doped ◽  
Conventional Furnace Annealing

ABSTRACTRapid thermal annealing (RTA) is used to form shallow and heavily-doped contact regions in undoped, semi-insulating GaAs. These layers are formed by using a high-intensity tungstenhalogen lamp to diffuse germanium and selenium from a deposited GeSe thin-film. RTA reduces surface degradation and permits better control of the diffusion profile than conventional furnace annealing. Optimal 20-second RTA occurs above a diffusion threshold at 950°C but below the failure of the SiO2 encapsulant at 1100°C. The n+ regions created have peak impurity concentrations over 1020/cm3 at depths under 750 Å with sheet resistances less than 60 Ω/▩. Non-alloyed ohmic contacts exhibit specific contact resistivites of 2.2 × 10−4 Ω · cm−2.

Metal/P-type GeSn Contacts with Specific Contact Resistivity down to 4.4×10−10 Ω-cm2

2018 ◽  
Author(s):  
Ying Wu ◽  
Wei Wang ◽  
Saeid Masudy-Panah ◽  
Yang Li ◽  
Kaizhen Han ◽  
...  
Keyword(s):  
Contact Resistivity ◽  
Specific Contact ◽  
Specific Contact Resistivity ◽  
P Type

omparisons of Silicide Formation by Rapid Thermal Annealing and Conventional Furnace Annealing

1987 ◽  
Vol 92 ◽  
Author(s):  
E. Ma ◽  
M. Natan ◽  
B.S. Lim ◽  
M-A. Nicolet
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Silicide Formation ◽  
X Ray Diffraction ◽  
Furnace Annealing ◽  
Cross Sectional ◽  
Conventional Furnace ◽  
Diffusion Controlled ◽  
Conventional Furnace Annealing ◽  
Kinetics Of

ABSTRACTSilicide formation induced by rapid thermal annealing (RTA) and conventional furnace annealing (CFA) in bilayers of sequentially deposited films of amorphous silicon and polycrystalline Co or Ni is studied with RBS, X-ray diffraction and TEM. Particular attention is paid to the reliability of the RTA temperature measurements in the study of the growth kinetics of the first interfacial compound, Co2Si and Ni2Si, for both RTA and CFA. It is found that the same diffusion-controlled kinetics applies for the silicide formation by RTA in argon and CFA in vacuum with a common activation energy of 2.1+0.2eV for Co2Si and 1.3+0.2eV for Ni Si. Co and Ni atoms are the dominant diffusing species; during silicide formation by both RTA and CFA. The microstructures of the Ni-silicide formed by the two annealing techniques, however, differs considerably from each other, as revealed by cross-sectional TEM studies.

scholarly journals Ultralow Specific Contact Resistivity in Metal–Graphene Junctions via Contact Engineering

2018 ◽  
Vol 6 (1) ◽  
pp. 1801285 ◽  
Author(s):  
Vikram Passi ◽  
Amit Gahoi ◽  
Enrique G. Marin ◽  
Teresa Cusati ◽  
Alessandro Fortunelli ◽  
...  
Keyword(s):  
Contact Resistivity ◽  
Specific Contact ◽  
Specific Contact Resistivity ◽  
Contact Engineering
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