Enhanced Interdiffusion of GaAs-AlgaAs Interfaces Following Ion Implantation and Rapid Thermal Annealing

1989 ◽  
Vol 147 ◽  
Author(s):  
K. B. Kahen ◽  
G. Rajeswaran ◽  
D. L. Peterson ◽  
L. R. Zheng ◽  
N. L. Ott
Keyword(s):  
Ion Implantation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Three Dimensional ◽  
Time Frame ◽  
Diffusion Equations ◽  
Excess Vacancy ◽  
Coupled Diffusion ◽  
Interdiffusion Process ◽  
Initial Distributions

AbstractThe interdiffusion of GaAs-AlGaAs interfaces has been shown to be enhanced following ion implantation and rapid thermal annealing at approximately 950°C. A model is presented which explains this phenomenon. It is based on the solution of coupled diffusion equations involving the excess vacancy and Al distributions following ion implantation. Both initial distributions are obtained from the solution of a three-dimensional Monte Carlo simulation of ion implantation into a heterostructure sample. The model is found to be in excellent agreement with several sets of experimental data. More specifically, the model is shown to be valid for ions which do not diffuse appreciably in the time frame of the rapid thermal annealing and for as-implanted vacancy concentrations below ∼6×1019 cm−3. Above that concentration, some vacancies are hypothesized to coalesce, thus being unavailable to assist in the enhanced interdiffusion process.

Mechanisms for Ion and Te-Induced Intermixing of GaAs-AlGaAs Interfaces.

1988 ◽  
Vol 144 ◽  
Author(s):  
K. B. Kahen ◽  
G. Rajeswaran
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Ion Implantation ◽  
Decay Constant ◽  
Three Dimensional ◽  
Experimental Results ◽  
Ensemble Monte Carlo ◽  
Coupled Diffusion ◽  
Interdiffusion Process ◽  
Initial Distributions

ABSTRACTRecently, GaAs-AlGaAs interfaces have been interdiffused following furnace and rapid thermal annealing (RTA) of samples containing impurities. Two models are proposed to explain the events occurring during the annealing processes. Te was chosen as the impurity for furnace annealing, whereas for the case of RTA, the impurities were introduced via ion implantation. The Te-induced interdiffusion process is modeled using an ensemble Monte Carlo simulation. The results of the simulation are in good agreement with the Te intermixing data. In the case of ion implantation followed by RTA, the intermixing model is based on the solution of coupled diffusion equations involving the excess vacancies and the Al distribution following ion implantation. Both initial distributions are obtained from the solution of a three-dimensional Monte Carlo simulation of ion implantation into a heterostructure sample. The excess interstitials calculated in the simulation are coupled to the vacancy diffusion via a phenomenological decay constant. Having established the value of the decay constant from one set of experimental results, the model is able to predict accurately other independent experimental results.

Properties of the TiSi2/p+nstructures formed by ion implantation through silicide and rapid thermal annealing

1992 ◽  
Vol 72 (1) ◽  
pp. 73-77 ◽  
Author(s):  
H. B. Erzgräber ◽  
P. Zaumseil ◽  
E. Bugiel ◽  
R. Sorge ◽  
K. Tittelbach‐Helmrich ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing

Correlation Between Defect Characteristics and Layer Intermixing in Si Implanted GaAs/AIGaAs Superlattices

1989 ◽  
Vol 147 ◽  
Author(s):  
Samuel Chen ◽  
S.-Tong Lee ◽  
G. Braunstein ◽  
G. Rajeswaran ◽  
P. Fellinger
Keyword(s):  
Ion Implantation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Peak Position ◽  
Compound Semiconductor ◽  
Subsequent Annealing ◽  
Semiconductor Superlattices ◽  
Furnace Annealing ◽  
Annealing Conditions ◽  
Induced Defects

AbstractDefects induced by ion implantation and subsequent annealing are found to either promote or suppress layer intermixing in Ill-V compound semiconductor superlattices (SLs). We have studied this intriguing relationship by examining how implantation and annealing conditions affect defect creation and their relevance to intermixing. Layer intermixing has been induced in SLs implanted with 220 keV Si+ at doses < 1 × 1014 ions/cm2 and annealed at 850°C for 3 hrs or 1050°C for 10 s. Upon furnace annealing, significant Si in-diffusion is observed over the entire intermixed region, but with rapid thermal annealing layer intermixing is accompanied by negligible Si movement. TEM showed that the totally intermixed layers are centered around a buried band of secondary defects and below the Si peak position. In the nearsurface region layer intermixing is suppressed and is only partially completed at ≤1 × 1015 Si/cm2. This inhibition is correlated to a loss of the mobile implantation-induced defects, which are responsible for intermixing.

scholarly journals TEM Observation of Si0.99C0.01 Thin Films with Arsenic-Ion-, Boron-Ion-, and Silicon-Ion-Implantation Followed by Rapid Thermal Annealing

2017 ◽  
Vol 05 (01) ◽  
pp. 15-25
Author(s):  
Junji Yamanaka ◽  
Shigenori Inoue ◽  
Keisuke Arimoto ◽  
Kiyokazu Nakagawa ◽  
Kentarou Sawano ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Implantation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing

Rapid Thermal Anneaung of Arsenic-Phosphorus(N+-N-) Double-Diffused Shallow Junctions

1985 ◽  
Vol 52 ◽  
Author(s):  
D. L. Kwong ◽  
N. S. Alvi ◽  
Y. H. Ku ◽  
A. W. Cheung
Keyword(s):  
Ion Implantation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Experimental Results ◽  
Silicon Substrates ◽  
Electrical Characteristics ◽  
Shallow Junctions

ABSTRACTDouble-diffused shallow junctions have been formed by ion implantation of both phosphorus and arsenic ions into silicon substrates and rapid thermal annealing. Experimental results on defect removal, impurity activation and redistribution, effects of Si preamorphization, and electrical characteristics of Ti-silicided junctions are presented.

Raman Scattering Study of Mixing of GaAs/AlAs Superlattices by Ion Implantation and Rapid Thermal Annealing

1986 ◽  
Vol 69 ◽  
Author(s):  
D. Kirillov ◽  
P. Ho ◽  
G. A. Davis
Keyword(s):  
Ion Implantation ◽  
Raman Scattering ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Damaged Material ◽  
Different Types ◽  
Scattering Study

AbstractRaman scattering was applied to study mixing of GaAs/AlAs superlattices. Different implantation ions and doses were used. The evolution from partially amorphous to completely amorphous and from partially mixed to completely mixed structures was observed. Rapid thermal annealing caused recrystallization of the damaged material. Different types of structures were obtained, depending on the implantation doses and species of ions. Completely mixed crystalline alloys could be obtained only for high implantation doses.

BF2 ion implantation in silicon through surface oxides, behaviour of the fluorine with rapid thermal annealing

1987 ◽  
Vol 5 (9) ◽  
pp. 311-314 ◽  
Author(s):  
M.C. Ozturk ◽  
J.J. Wortman ◽  
W.K. Chu ◽  
G. Rozgonyi ◽  
D.P. Griffis
Keyword(s):  
Ion Implantation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Surface Oxides
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