Trichloride-Hydride Vpe: A Hybrid Regrowth Process for III-V Epitaxial Heterostructures

1989 ◽  
Vol 145 ◽  
Author(s):  
M. A. Digiuseppe ◽  
V. D. Mattera ◽  
J. Brown ◽  
L. Marchut ◽  
D. T. Ekholm ◽  
...  
Keyword(s):  
High Performance ◽  
Light Sources ◽  
Very High Frequency ◽  
Performance Requirements ◽  
Transmission Electron ◽  
Device Structures ◽  
Metal Organic ◽  
Epitaxial Heterostructures ◽  
Dark Currents

AbstractInP based alloy epitaxial heterostructures currently are being developed as light sources and detectors for optoelectronic applications. High performance requirements at very high frequency operation have resulted in the need for complex device structures which can require one or more epitaxial steps. As a result, hybrid growth techniques combining LPE with either hydride VPE, trichloride VPE or metal organic CVD previously have been used to grow emitter and photodetector heterostructures. In this paper, a hybrid trichloride-hydride VPE growth technique for complex heterostructures is described. Trichloride VPE which is particularly suited for certain regrowth applications because of its inherent in-situ etching capability has been successfully utilized to regrow low-doped, high purity InP on InP/InGaAs/InGaAsP heterostructures grown by hydride VPE. Transmission electron microscopy has shown that the regrowth interface is free of major defects and dislocations. P-diffused APD mesa devices obtained from these structures were operated with fields at the regrowth interface as high as 3.8 × 105V/cm. Primary dark currents were observed as low as 1.4nA.

Electron Beam Enhanced Precipitation in Highly Carbon Doped GaAs Layers

1996 ◽  
Vol 439 ◽  
Author(s):  
P. Werner ◽  
U. Gösele ◽  
H. Kohda
Keyword(s):  
Point Defects ◽  
Growth Direction ◽  
Precipitation Mechanism ◽  
Native Defects ◽  
Carbon Doped ◽  
Organic Vapor ◽  
Transmission Electron ◽  
Metal Organic ◽  
O 10

AbstractHighly carbon doped GaAs layers grown by metal organic vapor phase epitaxy (MOVPE) Has been investigated by transmission electron microscopy (TEM). Electron irradiation has been applied to generate point defects interacting with native defects, e.g., substitutional carbon. This irradiation induces periodically arranged striations perpendicular to the growth direction, which were observed in situ by TEM. Furthermore, precipitates (Ø= 10–15nm) were formed containing non-crystalline material, which most likely is gallium. To explain these phenomena a precipitation mechanism is proposed. It involvs small fluctuations of the incorporated C as well as the interaction of irradiation induced point defects, mainly As and C interstitials and As vacancies.

An Easy Preparation of Hybrid SiO2@Poly Acrylic Acid Nanoparticles

2013 ◽  
Vol 475-476 ◽  
pp. 1340-1343
Author(s):  
Hai Wang Wang ◽  
Xiu Juan Ding ◽  
Jie Sun ◽  
Jin Peng Luan
Keyword(s):  
Acrylic Acid ◽  
High Performance ◽  
In Situ Polymerization ◽  
Polymer Materials ◽  
Performance Ratio ◽  
Nanometer Materials ◽  
Transmission Electron ◽  
Comprehensive Performance ◽  
Nanometer Particles

Nanometer materials are widely used in the modification of polymer materials such as polypropylene because of its unique performance. nanocomposite material,which expended the application field of polymer ,is a kind of new composite materials with high performance ratio and widely application prospect .This paper adopted the surface-initiated technology to coat and modify the surface of nanosilica,which solved the problem of the agglomeration and interface compatibility of the nanometer particles and improved its dispersion in the acrylic acid,then prepared SiO2/PAA nanocomposite .The composite was characterized by infrared spectrum and transmission electron microscopy (TEM) ,etc.The research results showed that the nanocomposite prepared by in-situ polymerization technology had higher toughness ,strength and more excellent comprehensive performance.

scholarly journals In-Situ Electrical Biasing of Electrically Connected TEM Lamellae with Embedded Nanodevices

2021 ◽  
Author(s):  
Maria Brodovoi ◽  
Kilian Gruel ◽  
Lucas Chapuis ◽  
Aurélien Masseboeuf ◽  
Cécile Marcelot ◽  
...  
Keyword(s):  
Electric Fields ◽  
High Performance ◽  
Low Cost ◽  
Electron Holography ◽  
Device Architecture ◽  
Quantitative Studies ◽  
Transmission Electron ◽  
Microelectronics Industry

Abstract In response to a continually rising demand for high performance and low-cost devices, and equally driven by competitivity, the microelectronics industry excels in meeting innovation challenges and further miniaturizing products. However, device shrinkage and the increasing complexity of device architecture require local quantitative studies. In this paper, we demonstrate with a case study on a nanocapacitor, the capability of transmission electron microscopy in electron holography mode to be a unique in-situ technique for mapping electric fields and charge distributions on a single device.

Liquid Metal‐Organic Frameworks In‐Situ Derived Interlayer for High‐Performance Solid‐State Na‐Metal Batteries

2021 ◽  
pp. 2102396
Author(s):  
Xianguang Miao ◽  
Peng Wang ◽  
Rui Sun ◽  
Jiafeng Li ◽  
Zhongxiao Wang ◽  
...  
Keyword(s):  
Solid State ◽  
Liquid Metal ◽  
High Performance ◽  
Metal Organic Frameworks ◽  
Metal Organic

scholarly journals In-Situ Liquid Transmission Electron Microscopy (TEM) for the analysis of Metal Organic Frameworks (MOFs)

2014 ◽  
Vol 20 (S3) ◽  
pp. 1614-1615
Author(s):  
Joseph P. Patterson ◽  
Patricia Abellan Baeza ◽  
Michael Denny ◽  
Seth Cohen ◽  
Chiwoo Park ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Metal Organic Frameworks ◽  
Transmission Electron ◽  
Metal Organic

Electron Beam Enhanced Precipitation in Highly Carbon Doped GaAs Layers

1996 ◽  
Vol 438 ◽  
Author(s):  
P. Werner ◽  
U. Gösele ◽  
H. Kohda
Keyword(s):  
Point Defects ◽  
Growth Direction ◽  
Precipitation Mechanism ◽  
Native Defects ◽  
Carbon Doped ◽  
Organic Vapor ◽  
Transmission Electron ◽  
Metal Organic ◽  
O 10

AbstractHighly carbon doped GaAs layers grown by metal organic vapor phase epitaxy (MOVPE) have been investigated by transmission electron microscopy (TEM). Electron irradiation has been applied to generate point defects interacting with native defects, e.g., substitutional carbon. This irradiation induces periodically arranged striations perpendicular to the growth direction, which were observed in situ by TEM. Furthermore, precipitates (Ø= 10–15nm) were formed containing non-crystalline material, which most likely is gallium. To explain these phenomena a precipitation mechanism is proposed. It involves small fluctuations of the incorporated C as well as the interaction of irradiation induced point defects, mainly As and C interstitials and As vacancies.

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