Electron Transport in InAs/AlSb Quantum Wells: Interface Sequencing Effects

1989 ◽  
Vol 145 ◽  
Author(s):  
Gary Tuttle ◽  
Herbert Kroemer ◽  
John H. English
Keyword(s):  
Electron Transport ◽  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Electron Mobility ◽  
Molecular Beam ◽  
Antisite Defect ◽  
The Other ◽  
Defect Model ◽  
Bottom Interface ◽  
Different Types

AbstractWe present data on electron transport in AlSb/InAs/AlSb quantum wells grown by molecular beam epitaxy. Because both anion and cation change across an InAs/Alsb interface, it is possible to grow such wells with two different types of interfaces, one with an InSb-like bond configuration, the other AlAs-like. Electron mobility and concentration were found to depend very strongly on the manner in which the quantum well's interfaces were grown, with high mobilities seen only if the bottom interface is InSb-like. An As-on-Al sites antisite defect model is postulated for bottom AlAs-like interfaces.

Optical properties of quantum wells grown upon gas source molecular‐beam epitaxy low‐temperature buffers

1991 ◽  
Vol 69 (11) ◽  
pp. 7942-7944 ◽  
Author(s):  
K. T. Shiralagi ◽  
R. A. Puechner ◽  
K. Y. Choi ◽  
R. Droopad ◽  
G. N. Maracas
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Gas Source

Laser Quality AlGaAs-GaAs Quantum Wells Grown on Low Temperature GaAs

1991 ◽  
Vol 241 ◽  
Author(s):  
Y. Hwang ◽  
D. Zhang ◽  
T. Zhang ◽  
M. Mytych ◽  
R. M. Kolbas
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Quantum Wells ◽  
Barrier Layer ◽  
Molecular Beam ◽  
Optical Quality ◽  
First Order ◽  
Gaas Buffer Layer ◽  
Low Temperature Gaas ◽  
Lt Gaas

ABSTRACTIn this work we demonstrate that photopumped quantum wellheterostructure lasers with excellent optical quality can be grown ontop of a LT GaAs buffer layer by molecular beam epitaxy. Hightemperature thermal annealing of these lasers blue-shifts the laseremission wavelengths but the presence/absence of a LT GaAs layerhad little effect on the overall laser thresholds. Also, to first order itwas not necessary to include an AlAs barrier layer to preventadverse effects (as has been necessary in the gate stack of MESFETs to prevent carrier compensation).

Photoluminescence from GaAs/AlGaAs Quantum Wells Grown at 350°C by Conventional Molecular Beam Epitaxy

1991 ◽  
Vol 30 (Part 2, No. 10A) ◽  
pp. L1726-L1728 ◽  
Author(s):  
Yoshinobu Sekiguchi ◽  
Sei-ichi Miyazawa ◽  
Natsuhiko Mizutani
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Molecular Beam
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