Channeling of Shallow Si Implants Into GaAs as a Function of Tilt and Rotation Angles

1988 ◽  
Vol 144 ◽  
Author(s):  
Harold J. Hovel ◽  
T. E. McKoy ◽  
J. M. Mitcheli ◽  
G. Scilla ◽  
S. J. Moorea ◽  
...  

ABSTRACTThe effects of tilt and rotation angle on implant channeling are explored for Si implants into (100)-oriented GaAs substrates using Monte Carlo simulations, SIMS profiling, capacitance profiling, and Hall measurements. It is shown that the 7° tilt angle often used to prevent axial channeling is not large enough, and 11–13° angles are required to obtain the sharpest and most reproducible implant profiles. Rotation angles have a much smaller effect on the profiles as long as the beam incidence is kept away from the < 110 > direction.

Scanning ◽  
2021 ◽  
Vol 2021 ◽  
pp. 1-7
Author(s):  
Seyed Mahmoud Bayazid ◽  
Yu Yuan ◽  
Raynald Gauvin

Monte Carlo simulations were performed to investigate the behavior of the peak to background ratio (P/B) of particles on a substrate as a function of different variables such as take-off angle, tilt angle, particle size, and beam energy. The results showed that the P/B highly depends on the beam energy, the size of particles, and the composition of the substrates. Results showed that the rate of intensity reduction of the peak is less than the background for a high tilt angle (60 degrees), and thereby, the P/B increases at a high tilt angle. It was shown that by increasing the take-off angle, the P/B initially reduces and then reaches a plateau. Results showed that the P/B highly depends on the size of particles. Analyses showed that by moving the electron beam from the center to the side of the particle, the P/B increases. Finally, the spherical particles have higher sensitivity of the P/B to the beam position than the cubical particles.


2000 ◽  
Vol 618 ◽  
Author(s):  
Frank Grosse ◽  
Edward T. Croke ◽  
Mark F. Gyureb ◽  
Margaret Floydc ◽  
David J. Smith

ABSTRACTThe growth of Si1−yCy on Si(001) and Si(118) surfaces is investigated experimentally and theoretically. A step instability is found on (118) surfaces leading to step bunching, under low C-concentrations. This behavior is explained by increased diffusivity of Si dimers in the vicinity of carbon. Self adjusting step bunches are found in kinetic Monte Carlo simulations with ordering of the carbon along nearly (001) planes. Experimental parameters (i.e., temperature, flux rate, and tilt angle of the substrate), which are controllable experimentally, can be used to adjust the length scale of the step bunching.


Author(s):  
Matthew T. Johnson ◽  
Ian M. Anderson ◽  
Jim Bentley ◽  
C. Barry Carter

Energy-dispersive X-ray spectrometry (EDS) performed at low (≤ 5 kV) accelerating voltages in the SEM has the potential for providing quantitative microanalytical information with a spatial resolution of ∼100 nm. In the present work, EDS analyses were performed on magnesium ferrite spinel [(MgxFe1−x)Fe2O4] dendrites embedded in a MgO matrix, as shown in Fig. 1. spatial resolution of X-ray microanalysis at conventional accelerating voltages is insufficient for the quantitative analysis of these dendrites, which have widths of the order of a few hundred nanometers, without deconvolution of contributions from the MgO matrix. However, Monte Carlo simulations indicate that the interaction volume for MgFe2O4 is ∼150 nm at 3 kV accelerating voltage and therefore sufficient to analyze the dendrites without matrix contributions.Single-crystal {001}-oriented MgO was reacted with hematite (Fe2O3) powder for 6 h at 1450°C in air and furnace cooled. The specimen was then cleaved to expose a clean cross-section suitable for microanalysis.


1979 ◽  
Vol 40 (C7) ◽  
pp. C7-63-C7-64
Author(s):  
A. J. Davies ◽  
J. Dutton ◽  
C. J. Evans ◽  
A. Goodings ◽  
P.K. Stewart

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