Donage and in Situ Annealing During Ion Implantation

1982 ◽  
Vol 14 ◽  
Author(s):  
D. K. Sadana ◽  
J. Washburn ◽  
P. F. Byrne ◽  
N. W. Cheung
Keyword(s):  
Ion Implantation ◽  
Room Temperature ◽  
Amorphous Region ◽  
Ion Beams ◽  
Temperature Range ◽  
Transmission Electron ◽  
Annealing Effects ◽  
Relative Narrowing ◽  
Crystalline Matrix

ABSTRACTFormation of amorphous (α) layers in Si during ion implantation in the energy range 100 KeV–11MeV and temperature range liquid nitrogen (LN)-100°C has been investigated.Cross-sectional transmission electron microscopy (XTEM) shows that buried amorphous layers can be created for both room temperature (RT) and LN temperature implants, with a wider 100 percent amorphous region for the LN cooled case. The relative narrowing of the α layer during RT implantation is attributed to in situ annealing. Implantation to the same fluence at temperatures above 100°C does not produce αlayers. To further investigate in situ annealing effects, specimens already containing buried α layers were further irradiated with ion beams in the temperature range RT-400°C. It was found that isolated small α zones (< 50 Å diameter)embedded in the crystalline matrix near the two α/c interfaces dissolved into the crystal but the thickness of the 100 percent α layer was not appreciably affected by further implantation at 200°C. A model for in situ annealing during implantation is presented.

scholarly journals Thermal Conductivity of Cu-Cr-Zr-Ti Alloy in the Temperature Range of 300–873 K

2012 ◽  
Vol 2012 ◽  
pp. 1-4 ◽  
Author(s):  
S. Chenna Krishna ◽  
N. Supriya ◽  
Abhay K. Jha ◽  
Bhanu Pant ◽  
S. C. Sharma ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Room Temperature ◽  
Ofhc Copper ◽  
Ti Alloy ◽  
Phonon Thermal Conductivity ◽  
Temperature Range ◽  
Transmission Electron

In the present investigation, thermal conductivity of Cu-Cr-Zr-Ti alloy was determined as the product of the specific heat (), thermal diffusivity (), and density () in the temperature range of 300–873 K. The experimental results showed that the thermal conductivity of the alloy increased with increase in temperature up to 873 K and the data was accurately modeled by a linear equation. For comparison, thermal conductivity was also evaluated for OFHC copper in the same temperature range. The results obtained were discussed using electrical conductivity and hardness measurements made at room temperature. Transmission electron microscopy (TEM) was done to understand the microstructural changes occurring in the sample after the test. Wiedemann-Franz-Lorenz law was employed for calculating electronic and phonon thermal conductivity using electrical conductivity. On the basis of studies conducted it was deduced that in situ aging may be one of the reasons for the increase in thermal conductivity with temperature for Cu-Cr-Zr-Ti alloy.

Deuterium Interactions with Ion-Implanted Oxygen in Cu and Au

1988 ◽  
Vol 128 ◽  
Author(s):  
S. M. Myers ◽  
W. A. Swansiger ◽  
D. M. Follstaedt
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Ion Implantation ◽  
Nuclear Reaction ◽  
Room Temperature ◽  
Phase Changes ◽  
Nuclear Reaction Analysis ◽  
Temperature Range ◽  
Transmission Electron ◽  
First Time

ABSTRACTThe interactions of deuterium (D) with oxygen in Cu and Au were examined using ion implantation, nuclear-reaction analysis, and transmission electron microscopy. In Cu, the reduction of Cu2O precipitates by D to produce D20 was shown to occur readily down to room temperature, at a rate limited by the transport of D to the oxides. The reverse process of D2O dissociation was characterized for the first time below the temperature range of steam blistering. The evolution of the Cu(D)-Cu2O-D2O system was shown to be predicted by a newly extended transport formalism encompassing phase changes, trapping, diffusion, and surface release. In Au, buried 0 sinks were used to measure the permeability of D at 573 and 373 K, thereby extending the range of measured permeabilities downward by about six orders or magnitude.

THE ORIGIN OF ROOM TEMPERATURE FERROMAGNETISM IN Co-TiO2 SYSTEM

2008 ◽  
Vol 22 (01n02) ◽  
pp. 63-69 ◽  
Author(s):  
J. S. PAN ◽  
J. W. CHAI ◽  
S. J. WANG ◽  
J. G. TAO ◽  
C. H. A. HUAN
Keyword(s):  
Magnetic Moment ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Room Temperature Ferromagnetism ◽  
Saturation Magnetic Moment ◽  
Transmission Electron ◽  
High Annealing ◽  
Annealing Effects ◽  
Composition Structure

The annealing effects on the composition, structure and magnetism for Co overlayer deposited onto rutile TiO 2 (100) surfaces at room temperature has been investigated. Room temperature ferromagnetic behaviour is exhibited for all samples, but saturation magnetic moment per Co atom decreases with increasing annealing temperature until 530°C. In-situ photoemission studies show that the reduction of the saturation magnetic moment is due to Co oxidation at high annealing temperature. However, the saturation magnetic moment increases after annealing the sample up to 700°C. The formation of a Co - Ti - O phase rather than Co metallic clusters observed by high-resolution transmission electron microscopy is suggested to be responsible for the increase of the saturation magnetic moment.

Dynamic studies of silicide-mediated crystallization of amorphous silicon

1992 ◽  
Vol 50 (2) ◽  
pp. 1352-1353
Author(s):  
C. Hayzelden ◽  
J. L. Batstone
Keyword(s):  
Ion Implantation ◽  
Solid Phase ◽  
Metallic Phase ◽  
Single Crystal Substrate ◽  
Free Electrons ◽  
Melt Temperature ◽  
Transmission Electron ◽  
Crystal Substrate ◽  
High Resolution Tem

Epitaxial reordering of amorphous Si(a-Si) on an underlying single-crystal substrate occurs well below the melt temperature by the process of solid phase epitaxial growth (SPEG). Growth of crystalline Si(c-Si) is known to be enhanced by the presence of small amounts of a metallic phase, presumably due to an interaction of the free electrons of the metal with the covalent Si bonds near the growing interface. Ion implantation of Ni was shown to lower the crystallization temperature of an a-Si thin film by approximately 200°C. Using in situ transmission electron microscopy (TEM), precipitates of NiSi2 formed within the a-Si film during annealing, were observed to migrate, leaving a trail of epitaxial c-Si. High resolution TEM revealed an epitaxial NiSi2/Si(l11) interface which was Type A. We discuss here the enhanced nucleation of c-Si and subsequent silicide-mediated SPEG of Ni-implanted a-Si.Thin films of a-Si, 950 Å thick, were deposited onto Si(100) wafers capped with 1000Å of a-SiO2. Ion implantation produced sharply peaked Ni concentrations of 4×l020 and 2×l021 ions cm−3, in the center of the films.

Photoluminescence Enhancement of CdS Nanocrystals Fabricated on Dithiocarbamate Functionalized PET Substrates

2012 ◽  
Vol 512-515 ◽  
pp. 1511-1515
Author(s):  
Chun Lin Zhao ◽  
Li Xing ◽  
Xiao Hong Liang ◽  
Jun Hui Xiang ◽  
Fu Shi Zhang ◽  
...  
Keyword(s):  
Room Temperature ◽  
Hexagonal Structure ◽  
Diffraction Measurement ◽  
X Ray Diffraction ◽  
Visible Absorption ◽  
X Ray ◽  
Cds Nanocrystals ◽  
Morphological Studies ◽  
Transmission Electron

Cadmium sulfide (CdS) nanocrystals (NCs) were self-assembled and in-situ immobilized on the dithiocarbamate (DTCs)-functionalized polyethylene glycol terephthalate (PET) substrates between the organic (carbon disulfide diffused in n-hexane) –aqueous (ethylenediamine and Cd2+ dissolved in water) interface at room temperature. Powder X-ray diffraction measurement revealed the hexagonal structure of CdS nanocrystals. Morphological studies performed by scanning electron microscopy (SEM) and high-resolution transmission electron microscope (HRTEM) showed the island-like structure of CdS nanocrystals on PET substrates, as well as energy-dispersive X-ray spectroscopy (EDS) confirmed the stoichiometries of CdS nanocrystals. The optical properties of DTCs modified CdS nanocrystals were thoroughly investigated by ultraviolet-visible absorption spectroscopy (UV-vis) and fluorescence spectroscopy. The as-prepared DTCs present intrinsic hydrophobicity and strong affinity for CdS nanocrystals.

In situ transmission electron microscope measurements of solid Al-solid Pb and solid Al-liquid Pb surface-energy anisotropy in rapidly solidified Al-5% Pb (by mass)

1987 ◽  
Vol 414 (1847) ◽  
pp. 499-507 ◽  
Keyword(s):  
Electron Microscope ◽  
Melting Point ◽  
Surface Energy ◽  
Transmission Electron Microscope ◽  
Room Temperature ◽  
Transmission Electron ◽  
Increasing Temperature ◽  
Rapidly Solidified ◽  
Al Matrix

Alloys of Al-5% Pb and Al-5% Pb-0.5% Si (by mass) have been manufactured by rapid solidification and then examined by transmission electron microscopy. The rapidly solidified alloy microstructures consist of 5-60 nm Pb particles embedded in an Al matrix. The Pb particles have a cube-cube orientation relation with the Al matrix, and are cub-octahedral in shape, bounded by {100} Al, Pb and {111} Al, Pb facets. The equilibrium Pb particle shape and therefore the anisotropy of solid Al-solid Pb and solid Al-liquid Pb surface energies have been monitored by in situ heating in the transmission electron microscope over the temperature range between room temperature and 550°C. The ani­sotropy of solid Al-solid Pb surface energy is constant between room temperature and the Pb melting point, with a {100} Al, Pb surface energy about 14% greater than the {111} Al, Pb surface energy, in good agreement with geometric near-neighbour bond energy calculations. The {100} AI, Pb facet disappears when the Pb particles melt, and the anisotropy of solid Al-liquid Pb surface energy decreases gradually with increasing temperature above the Pb melting point, until the Pb particles become spherical at about 550°C.

scholarly journals In situ environmental HRTEM discloses low temperature carbon soot oxidation by ceria–zirconia at the nanoscale

2019 ◽  
Vol 55 (27) ◽  
pp. 3876-3878 ◽  
Author(s):  
Eleonora Aneggi ◽  
Jordi Llorca ◽  
Alessandro Trovarelli ◽  
Mimoun Aouine ◽  
Philippe Vernoux
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Low Temperature ◽  
Room Temperature ◽  
Soot Oxidation ◽  
Environmental Transmission ◽  
Transmission Electron ◽  
Carbon Soot ◽  
Environmental Transmission Electron Microscopy

In situ environmental transmission electron microscopy discloses room temperature carbon soot oxidation by ceria–zirconia at the nanoscale.

In-Situ Tem Investigation During Thermal Cycling of thin Copper Films

1996 ◽  
Vol 436 ◽  
Author(s):  
R.-M. Keller ◽  
W. Sigle ◽  
S. P. Baker ◽  
O. Kraft ◽  
E. Arzt
Keyword(s):  
Grain Growth ◽  
Room Temperature ◽  
Dislocation Motion ◽  
In Situ Tem ◽  
Copper Films ◽  
Stress Evolution ◽  
Cu Films ◽  
Transmission Electron ◽  
Insight Into

AbstractIn-situ transmission electron microscopy (TEM) was performed to study grain growth and dislocation motion during temperature cycles of Cu films with and without a cap layer. In addition, the substrate curvature method was employed to determine the corresponding stresstemperature curves from room temperature up to 600°C. The results of the in-situ TEM investigations provide insight into the microstructural evolution which occurs during the stress measurements. Grain growth occurred continuously throughout the first heating cycle in both cases. The evolution of dislocation structure observed in TEM supports an explanation of the stress evolution in both capped and uncapped films in terms of dislocation effects.

scholarly journals In Situ TEM Observations of Heavy Ion Damage in Gallium Arsenide

1988 ◽  
Vol 100 ◽  
Author(s):  
M. W. Bench ◽  
I. M. Robertson ◽  
M. A. Kirk
Keyword(s):  
Low Temperature ◽  
Room Temperature ◽  
National Laboratory ◽  
Argonne National Laboratory ◽  
Heavy Ion ◽  
In Situ Tem ◽  
Accelerator Facility ◽  
Transmission Electron ◽  
Ion Accelerator

ABSTRACTTransmission electron microscopy experiments have been performed to investigate the lattice damage created by heavy-ion bombardments in GaAs. These experiments have been performed in situ by using the HVEN - Ion Accelerator Facility at Argonne National Laboratory. The ion bcorbardments (50 keV Ar+ and Kr+) and the microscopy have been carried out at temperatures rangrin from 30 to 300 K. Ion fluences ranged from 2 × 1011 to 5 × 1013 ions cm−2.Direct-inpact amorphization is observed to occur in both n-type and semi-insulating GaAs irradiated to low ion doses at 30 K and room temperature. The probability of forming a visible defect is higher for low temperature irradiations than for room temperature irradiations. The amorphous zones formed at low temperature are stable to temperatures above 250 K. Post implantation annealing is seen to occur at room temperature for all samples irradiated to low doses until eventually all visible damage disappears.

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